Abstract: A light-emitting device and a method to from the device are is described. The device described herein may realize the transversely single mode operation by the buried mesa configuration even when the active layer contains aluminum. The method provides a step to form the mesa on a semiconductor substrate with an average dislocation density of 500 to 5000 cm?2, a step to form a protection layer, which prevents the active layer from oxidizing, at least on a side of the active layer, and a step to from a blocking layer so as to cover the protection layer and to bury the mesa.

Abstract: The present invention is to provide a method for manufacturing a semiconductor optical device, in which the unevenness of the burying of the mesa structure may be reduced. The process is configured to form a mask extending along [011] direction on the cap layer, to form a mesa structure by etching the upper cladding layer made of InP, the active region, and the lower cladding layer, to form a surfaces with the (01-1) and the (0-11) planes on both sides of the mesa structure, respectively, by causing the mass transportation, and finally to form the blocking layer by using the mask formed in advance. A semiconductor region with the second conduction type, which is the same with that of the upper cladding layer and is different from that of the lower cladding layer, is grown on the upper cladding layer after removing the mask and the cap layer.

Abstract: This invention provides a method for manufacturing a hetero-junction bipolar transistor, in which a hole concentration of a base layer doped with carbon can be increased. The method comprises the following steps. 1) A sub-collector 30, a collector 50, a base 60 doped with carbon are sequentially grown after setting a semiconductor substrate on the stage in the growth chamber; 2) an emitter 70 and an emitter contact 80 are grown at a temperature T; and 3) grown layers are annealed at a temperature TA, where the relation of T<Ta≦600° C. is satisfied. This process enhances the activation of carbon atoms by dissociating hydrogen atoms captured in the base 60 to the ambience.

Abstract: This invention provides a method for manufacturing a hetero-junction bipolar transistor, in which a hole concentration of a base layer doped with carbon can be increased. The method comprises the following steps. 1) A sub-collector 30, a collector 50, a base 60 doped with carbon are sequentially grown after setting a semiconductor substrate on the stage in the growth chamber; 2) an emitter 70 and an emitter contact 80 are grown at a temperature T; and 3) grown layers are annealed at a temperature TA, where the relation of T<Ta≦600° is satisfied. This process enhances the activation of carbon atoms by dissociating hydrogen atoms captured in the base 60 to the ambience.

Abstract: A translucent, high density elastic resin composition which comprises 100 wt. parts of a thermoplastic resin or a mixture of a plasticizer and a thermoplastic resin, and 100-500 wt. parts of a powdered glass having a refractive index of N.sub.D =1.5-2.2. This composition is suitable for fabricating translucent soundbarriers.