Abstract: An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

Abstract: A principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.

Abstract: A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

Abstract: Disclosed is a method which enables a sufficient anti-corrosion processing of an interconnection pattern. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, so as to form an interconnection pattern. The interconnection pattern is irradiated with deep UV light in a vacuum of 1.times.10.sup.-4 Torr or less in degree. Even if a protection film including halogen is formed on the side wall of the interconnection pattern upon reactive ion etching, this method enables sufficient removal of the halogen in a sufficient time and a complete anti-corrosion processing of the interconnection pattern.

Abstract: A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.

Abstract: In the first step, a silicon oxide film (21) on a silicon surface (22) is etched away using a CHF.sub.3 gas. After the silicon oxide film is removed, organic matter (23) of the C.sub.x F.sub.y group remains on the silicon surface. In the second step, the organic matter (23) is etched away using a NF.sub.3 gas. The silicon oxide film (21) is etched in preference to underlying silicon (22) by using the CHF.sub.3 gas. A F radical is easily formed from the NF.sub.3 gas used for removing the organic matter (23). At the time of forming this F radical, no residue is formed which makes the silicon surface (22) dirty. Consequently, a clear silicon surface (22) is obtained.

Abstract: An optical beam scanning system is constructed with less optical elements. A light beam (B.sub.1) of parallel rays passes through a first image-forming system (L.sub.1). The first image-forming system consists of a cylindrical lens (2) having a refracting power in a direction equivalent to a main scanning direction (X) and a spherical convex lens (3). Focuses of the cylindrical lens and the spherical convex lens are within a prescribed allowance. A light beam (B.sub.11) passing through the spherical lens has a character of parallel rays within a vertical plane and a character of convergent rays within a horizontal plane to be focused on a deflection surface (4a). A reflected light beam (B.sub.2) is finally focused on a surface-to-be-scanned (8) through a second image-forming system (L.sub.2).

Abstract: A wafer treating device utilizing a plasma generated by a gas discharge caused by electron cyclotron resonance (ECR) includes a wafer treating chamber and a plasma generating chamber, a microwave supply for supplying microwave energy to the plasma generating chamber, and an electromagnetic coil which surrounds the plasma generating chamber to produce a minimum B-field therein. A plasma generated in the plasma generating chamber by electron cyclotron resonance is confined stably therein by the minimum B-field produced by the coil. Thus, the density and stability of the plasma in the plasma generating chamber are enhanced. The plasma in the plasma generating chamber is conveyed to a wafer in the wafer treating chamber along the diverging lines of a magnetic force. Examples of the minimum B-field producing coil include Ioffe bars, a baseball coil and an Yin-yang coil.

Abstract: A cold rolled steel sheet having a good ageing resistance is produced by subjecting a cold rolled steel sheet to continuous annealing including recrystallization, grain growth, quenching, supercooling, reheating and overageing according to inclinatory cooling, where after the recrystallization and the grain growth, the steel sheet is quenched at a cooling rate of 50 to 250.degree. C./sec from 720-600.degree. C. to 200-310.degree. C.; after retaining the steel sheet at the same temperature for 0 to 15 seconds, the steel sheet is reheated by at least 40.degree. C. up to 320-400.degree. C.; then the steel sheet is retained at the same temperature or cooled at a rate of not more than 0.7.degree. C./sec including the time for retaining the steel sheet at the same temperature; and then the steel sheet is cooled at an average cooling rate of not more than 10.degree. C./sec in a temperature zone of higher than 350.degree. C., at a specific average cooling rate in a temperature zone of 350.degree. C. to 300.degree. C.

Abstract: A semiconductor wafer treating device utilizing a gas plasma generated by electron cyclotron resonance (ECR) is disclosed whch comprises a wafer treating chamber and a plasma generating chamber communicating with the wafer treating chamber. Microwave energy at a frequency of not more than 2 GHz and not less than 100 MHz is supplied to the plasma generating chamber which is surrounded by a solenoidal coil and produces a magnetic field in the plasma generating chamber and in the wafer treating chamber to produce ECR and transport the plasma generated by ECR to the wafer. Thus, the Larmor radius of the electrons moving in helical paths in electron cyclotron resonance in the plasma generating chamber is optimized to make the plasma spatially uniform. Consequently, the uniformity of the treatment on the wafer is improved.

Abstract: An image reading and recording apparatus comprises a single housing, a moving type original holder provided on the housing, an image reading station including a fixed type image forming optical system provided in the uppermost portion of said housing, a magazine located in the housing horizontally adjacent to the image reading station, an image recording station located in the housing below the image reading station and an electrical control unit for image reading and for image recording located in the housing below the image recording station.

Abstract: An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave.

Abstract: An apparatus for correcting snaking of rollfilm comprises a driving roller for feeding the rollfilm to the exposure position with the film being maintained flat, pinch rollers provided such that they can approach or be separated from the driving roller, switching means for switching between the abutment and separation of the pinch rollers and the driving roller, and cutting means for cutting the rollfilm.

Abstract: A thermoplastic resin-silicone composite shaped article comprising (a) a shaped article of a thermoplastic resin selected from the group consisting of olefin resins, urethane resins and styrene resins and (b) a cured layer of an additional polymerization type silicone composition adhering to the one or both surfaces of the shaped article of a thermoplastic resin. To the surface of the above shaped article of a thermoplastic resin to which the above cured layer of an additionl polymerization type silicone composition does not adhere, there may adhere another cured layer of the above addition polymerization type silicone composition. To either or both of these cured layers, there may further adhere a layer of the above thermoplastic resin, other thermoplastic resin, a silicone rubber, a silicone resin, glass, ceramics or a metal.

Abstract: A thermoplastic resin-silicone composite shaped article comprising (a) a shaped article of a thermoplastic resin selected from the group consisting of olefin resins, urethane resins and styrene resins and (b) a cured layer of an addition polymerization type silicone composition adhering to the one or both surfaces of the shaped article of a thermoplastic resin. To the surface of the above shaped article of a thermoplastic resin to which the above cured layer of an addition polymerization type silicone composition does not adhere, there may adhere another cured layer of the above addition polymerization type silicone composition. To either or both of these cured layers, there may further adhere a layer of the above thermoplastic resin, other thermoplastic resin, a silicone rubber, a silicone resin, glass, ceramics or a metal.

Abstract: A thermoplastic resin-silicone rubber composite shaped article comprising (a) a shaped article of a thermoplastic resin selected from the group consisting of soft vinyl chloride resins, olefin resins, urethane resins and styrene resins and (b) a cured layer of an addition polymerization type silicone rubber composition adhering to the one or both surfaces of the shaped article of a thermoplastic resin. To the surface of the above shaped article of a thermoplastic resin to which the above cured layer of an addition polymerization type silicone rubber composition does not adhere, there may adhere another cured layer of the above addition polymerization type silicone rubber composition. To either or both of these cured layers, there may further adhere a layer of the above thermoplastic resin, other thermoplastic resin, a silicone rubber, a silicone resin, glass, ceramics or a metal.

Abstract: A process camera apparatus for forming a halftone image and a line image on a photosensitive material such as a positive or negative film. The apparatus comprises a base; a transparent platen provided on the base; a light-shielding cover covering the upper side of the transparent platen such as to form a light-shielded region on the transparent platen; a screen device including a contact screen and a screen frame for supporting the contact screen, the screen device being withdrawably disposed on the portion of the transparent platen within the light-shielded region; a pair of rollers disposed adjacent one end of the base and adapted for conveying the photosensitive material into the light-shielded region; and a light-shielded condition maintaining device adapted to maintain the light-shielded condition in the light-shielded region when the screen device is being taken out from the light-shielded region.

Abstract: A process for producing a synthetic coking coal of high volatile matter content by thermal cracking of a heavy hydrocarbon through the delayed coking process comprising heating said heavy hydrocarbon in a furnace to a temperature between about 380.degree. C. and 500.degree. C. and sufficient to initiate cracking; introducing said heated heavy hydrocarbon into a coking drum where it is maintained at a temperature and for a time sufficient to effect cracking to thereby produce a thermally cracked residue having a volatile matter content of from about 25 to 45 wt % and a Gieseler fluidity of at least about 50,000 ddpm; withdrawing said thermally cracked residue from the coking drum at a temperature selected so as to satisfy the relation:T.ltoreq.0.293x.sup.2 -26.12x+790where T is the temperature (.degree.C.