Abstract: A processing method comprises forming a water-soluble protective film on a first film having a processing area above a substrate irradiating processing light on the processing area selectively with to selectively remove the first film in the processing area and the protective film on the processing area, and removing the protective film with water after the selective irradiating.

Abstract: There is provided a composite thin film-holding substrate in which a composite thin film (4) comprising a filler (2) having a refractive index lower than that of a substrate (1) and a binder (3) having a refractive index higher than that of the filler (2) is formed on a surface of the substrate (1). Light is efficiently scattered when passing through the composite thin film (3) which comprises the filler (2) and the binder (3) having different refractive indexes from each other. In addition, the refractive index of a composite thin film (4) comprising a filler (2) having a low refractive index is low. As a result, the discharge efficiency of light which passes through the composite thin film (4) from the substrate (1) to the external is improved.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: There is provided a substrate for a light emitting device which includes an electrically conductive and transparent film which is in contact with a surface of a low refractive index member of which refractive index is greater than 1 and not greater than 1.30. In a preferable embodiment, the substrate further comprises a transparent member on its surface which is opposed to its surface which has the electrically conductive and transparent film. There is further provided a light emitting device which includes such substrate and a luminous layer, and the luminous layer is located on the electrically conductive and transparent film. With such light emitting device, a ratio of light which is withdrawn outside through the low refractive index member is increased, so that a coupling-out efficiency for surface emission of light withdrawn into the ambient air is increased.

Abstract: A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Abstract: A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

Abstract: A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

Abstract: An aerogel substrate useful for an electrically conductive substrate, a heat insulating substrate, an optical waveguide substrate, a substrate for a light emitting device or a light emitting device is provided. The aerogel substrate is characterized by comprising a functional layer and an aerogel layer, and an intermediate layer formed between the functional layer and the aerogel layer to allow the functional layer to be formed uniformly thereon. The intermediate layer is formed on at least one surface of the aerogel layer by a gas phase method, by the Langmuir-Blodgett method or by adsorption of an inorganic layered compound; or formed by a hydrophilicizing treatment of at least one surface of the aerogel layer followed by coating and drying an aqueous coating fluid, by an annealing treatment of at least one surface of the aerogel layer, or by a hydrophilicizing treatment of at least one surface of the aerogel layer.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Abstract: A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heat

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: In an optical element (B1) prepared by integrally forming, on surfaces of a transparent member, a refracting surface (R2) for receiving a light beam, a plurality of reflecting surfaces (R3, R4, R5) with curvatures, and a refracting surface (R6) for outputting the light beam reflected by the plurality of reflecting surfaces, a reference portion (7) for defining the position of the optical element in a predetermined direction with respect to a Y′-Z′ plane including an incident reference axis (5) and an exit reference axis (5) of at least one reflecting surface of the optical element (B1) is formed on the optical element.

Abstract: An optical waveguide for guided an incident light is formed on a substrate having an electro-optic effect. A first buffer layer is formed to cover an upper surface of the substrate. A conductive film is formed above the first buffer layer. A center electrode and a ground electrode are formed for applying a voltage in order to induce an electric field in the optical waveguide. A second buffer layer is formed between the conductive film and at least one of the center electrode and the ground electrode. The conductive film is formed to be present on at least a part below the ground electrode. A light guided through the optical waveguide is modulated by changing a phase by a voltage applied to the optical waveguide. Thereby, a thermal drift can be effectively restricted so that an optical modulation device having excellent electric characteristics can be realized.

Abstract: A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.

Abstract: A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.

Abstract: A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Abstract: An image input apparatus has a pan head for mounting an image pickup device thereon and for changing the image pickup direction of the image pickup device. The image pickup device has an engaging device, and control terminals capable of transmitting specification information about an operation of the pan head from the image pickup device to the pan head. The pan head has a holding device to be engaged with the engaging device so as to interchangeably hold the image pickup device, identifying terminals capable of receiving the specification information when the image pickup device is held by the holding device, and a selection circuit for selecting an operation of the pan head corresponding to the held image pickup device based on the received specification information.