Abstract: The present invention provides a method of manufacturing a practical direct-blow molded container having excellent barrier property against fuels, chemicals, various gases including oxygen. The method of manufacturing a practical direct-blow molded container containing the metaxylylene group-containing polyamide (C) being dispersed and layered in the polyolefin (A) includes using a die provided with a die body having a flow hole in which the melted resin extruded from an extruder flows and a cylindrical hollow having an opening in the lower side and the flow hole in the upper side, the opening and the flow hole opening downward and upward, respectively, a mandrel having a tip in the upper side, the tip pointing to the opening of the tip of the flow hole, a flow path clearance formed between the hollow of the die body and the mandrel, the flow path clearance defining a resin flow path, and a support part formed in the flow path clearance, the support part holding the mandrel in the hollow of the die body.

Abstract: A semiconductor device includes: a semiconductor chip having a switching element and multiple pads electrically connected to the switching element; and multiple lead terminals electrically connected to the respective pads. The multiple lead terminals include a control terminal used for control of on/off operation of the switching element, and a main terminal into which a main current flows when the switching element is in an on state. A coupling coefficient k falls within a range of ?3%?k?2%, where the coupling coefficient k is defined by a parasitic inductance Lg in a current path of a control current flowing in the control terminal, a parasitic inductance Lo in a current path of the main current, and a mutual inductance Ms of the parasitic inductances Lg and Lo.

Abstract: The present invention provides a polyethylene-based structure including from 60 to 90% by mass of a polyethylene (A), from 5 to 35% by mass of an acid-modified polyethylene (B) and from 5 to 35% by mass of a m-xylylene group-containing polyamide (C), in which the m-xylylene group-containing polyamide (C) is dispersed in a layer form in the polyethylene (A) to partially form a continuous phase thereof, and has a relative viscosity of from 2.5 to 4.5.

Abstract: A semiconductor device includes: a diode-integrated IGBT element in a same semiconductor substrate having a diode element and an IGBT element driven by a drive signal towards a gate; a sense element having a diode sense element with a current proportional to a current through the diode element and an IGBT sense element with a current proportional to a current through the IGBT element; a switch element connected to a first current pathway through the diode sense element and to a second current pathway different from the first current pathway. The switch element is turned off to control the second current pathway to be discontinuous with the first current pathway when no current flows through the diode sense element, and is turned on to control the second current pathway to be continuous with the first current pathway and apply a current when a current flows through the diode sense element.

Abstract: In a semiconductor device including an IGBT and a freewheeling diode W?2×L1/K1/2, where K?2.5, W denotes a distance between the divided first regions, L1 denotes a thickness of the drift layer, k1 denotes a parameter that depends on structures of the insulated gate bipolar transistor and the freewheeling diode, and K denotes a value calculated by multiplying the parameter k1 by a ratio of a snapback voltage to a built-in potential between the deep well layer and the drift layer.

Abstract: A polyethylene-based structure of the present invention is a polyethylene-based structure composed of a resin composition containing 60 to 90% by mass of a polyethylene (A), 5 to 35% by mass of an acid-modified polyethylene (B), and 5 to 35% by mass of a m-xylylene group-containing polyamide (C), wherein the m-xylylene group-containing polyamide (C) is dispersed in the form of layers in the resin composition which constitutes the structure, and the acid value of the acid-modified polyethylene (B) is from 5 to 30 mg/g.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: A fabrication method of a semiconductor device that includes trench gate structures each having a gate electrode extending in a depth-direction of an element, where first trench gate structures contribute to controlling the element and second trench gate structures do not contribute. The fabrication method includes forming the trench gate structures on a front face of a semiconductor substrate; forming on the front face, an electrode pad connected to the gate electrode of at least one trench gate structure; executing screening by applying a predetermined voltage between the electrode pad and an electrode portion having a potential other than a gate potential, to apply the predetermined voltage to gate insulator films in contact with each gate electrode connected to the electrode pad; and forming the second trench gate structures having the gate electrodes connected to the electrode pad, by short-circuiting the electrode portion to the electrode pad after executing screening.

Abstract: In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a back side of a semiconductor substrate to a predetermined depth. The proton layer is deeper than the phosphorus/arsenic layer. An impurity concentration of the proton layer peaks inside the phosphorus/arsenic layer and gradually, continuously decreases at a depth greater than the phosphorus/arsenic layer.

Abstract: A vibration device includes a touch panel, a vibrator that is arranged on the touch panel, a frame that is separated from at least a part of the touch panel and is arranged to surround the touch panel in a planar view, and a first connecting member that is arranged on the touch panel and the frame to cover a space between a part of the touch panel and the frame in a planar view and that connects the touch panel and the frame. Furthermore the first connecting member includes a first member positioned on the operation panel, a second member positioned on the frame, and a third member covering a space in a planar view. The thickness of the third member is smaller than those of the first and second members.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: The molded article includes a resin composition with a single shaft extruder, in which the resin composition is generated by melting and mixing a raw mixture, the raw mixture being obtained by blending 40-90 parts by mass of the polyolefin (A), 3-30 parts by mass of the metaxylylene group-containing polyamide (B), and 3-50 parts by mass of the modified polyolefin (C). In the single shaft extruder, the ratio of the length of the feeding part to the screw effective length is 0.40-0.55, the ratio of the length of the compressing part to the screw effective length is 0.10-0.30, the ratio of the length of the measuring part to the screw effective length is 0.10-0.40, the upper limit of the temperature of the feeding part falls within the range of +20° C. from the melting point of the metaxylylene group-containing polyamide or less, and the temperatures of the compressing part and the measuring part fall within the range of ?30° C. to +20° C.

Abstract: A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.

Abstract: In a semiconductor device including an IGBT and a freewheeling diode W?2×L1/K1/2, where K?2.5, W denotes a distance between the divided first regions, L1 denotes a thickness of the drift layer, k1 denotes a parameter that depends on structures of the insulated gate bipolar transistor and the freewheeling diode, and K denotes a value calculated by multiplying the parameter k1 by a ratio of a snapback voltage to a built-in potential between the deep well layer and the drift layer.

Abstract: A charge potential distributed over a vehicle body resulting from the contact, separation, and friction between a tire and a road surface is detected by a detecting unit provided with a sensing electrode that is disposed on the external surface of the vehicle body, a reference electrode that is disposed apart from the external surface of the vehicle body with a space therebetween, and a sensor amplifier that senses a potential between the sensing electrode and the reference electrode as a signal and amplifies the signal. And the amplitude of the charge potential detected by the detecting unit is monitored by a data processing unit, thereby making it possible to accurately identify not only the state of the road surface but also an internal pressure state of the tire, a wear state of the tire, and the like during vehicular travel.

Abstract: In a semiconductor device having a vertical semiconductor element configured to pass an electric current between an upper electrode and a lower electrode, a field stop layer includes a phosphorus/arsenic layer doped with phosphorus or arsenic and a proton layer doped with proton. The phosphorus/arsenic layer is formed from a back side of a semiconductor substrate to a predetermined depth. The proton layer is deeper than the phosphorus/arsenic layer. An impurity concentration of the proton layer peaks inside the phosphorus/arsenic layer and gradually, continuously decreases at a depth greater than the phosphorus/arsenic layer.

Abstract: In a semiconductor device including an IGBT and a freewheeling diode (FWD), W1, W2, and W3 satisfy predetermined formulas. W1 denotes a distance from a boundary between a cathode region and a collector region to a position, where a peripheral-region-side end of the well layer is projected, on a back side of the drift layer. W2 denotes a distance from a boundary between the IGBT and the FWD in a base region to the peripheral-region-side end of the well layer. W3 denotes a distance from the boundary between the cathode region and the collector region to a position, where a boundary between the base region and the well layer is projected, on the back side.

Abstract: A semiconductor device includes an IGBT forming region and a diode forming region. The IGBT forming region includes an IGBT operating section that operates as an IGBT and a thinned-out section that does not operate as an IGBT. The IGBT operating section includes a channel region, and the thinned-out section includes a first anode region. The diode forming region includes a second anode region. When an area density is defined as a value calculated by integrating a concentration profile of second conductivity type impurities in each of the channel region, the first anode region, and the second anode region in a depth direction, an area density of the channel region is higher than an area density of the first anode region and an area density of the second anode region.

Abstract: The present invention provides a method of manufacturing a practical direct-blow molded container having excellent barrier property against fuels, chemicals, various gases including oxygen. The method of manufacturing a practical direct-blow molded container containing the metaxylylene group-containing polyamide (C) being dispersed and layered in the polyolefin (A) includes using a die provided with a die body having a flow hole in which the melted resin extruded from an extruder flows and a cylindrical hollow having an opening in the lower side and the flow hole in the upper side, the opening and the flow hole opening downward and upward, respectively, a mandrel having a tip in the upper side, the tip pointing to the opening of the tip of the flow hole, a flow path clearance formed between the hollow of the die body and the mandrel, the flow path clearance defining a resin flow path, and a support part formed in the flow path clearance, the support part holding the mandrel in the hollow of the die body.

Abstract: A semiconductor device has a first conductivity-type semiconductor substrate, second conductivity-type channel regions, and second conductivity-type thinning-out regions. The channel regions and the thinning-out regions are formed adjacent to a substrate surface of the semiconductor substrate. Further, a hole stopper layer is formed in each of the thinning-out regions to divide the thinning-out region into a first part adjacent to the substrate surface and a second part adjacent to a bottom of the thinning-out region. The hole stopper layer has an area density of equal to or less than 4.0×1012 cm?2 to permit a depletion layer to punch through the hole stopper layer, thereby to restrict breakdown properties from being decreased.