Abstract: The additive for high-purity copper electrolytic refining of the present invention is an additive which is added to a copper electrolyte in electrolytic refining for high-purity copper and is formed of a non-ionic surfactant that includes a hydrophobic group containing an aromatic ring and a hydrophilic group containing a polyoxyalkylene group, in which a dispersion term dD of the Hansen solubility parameters satisfies 10?dD?20, a polarity term dP of the Hansen solubility parameters satisfies 6?dP?9, and a hydrogen bonding term dH of the Hansen solubility parameters satisfies 9?dH?11.

Abstract: A terminal material in which galvanic corrosion is not occurred using a copper or copper alloy base material as a terminal crimped to an end part of an electrical wire formed from an aluminum wire material: an intermediate zinc layer 4 formed from zinc or zinc alloy and a tin layer 5 formed from tin or tin alloy are layered in this order on a base material 2 formed from copper or copper alloy; the intermediate zinc layer 4 has a thickness of 0.1 ?m to 5.0 ?m inclusive and a zinc concentration equal to or more than 5 mass %; and the tin layer 5 has a zinc concentration of 0.4 mass % to 15 mass % inclusive and a grain size of the tin layer 5 is 0.1 ?m to 3.0 ?m inclusive preferably.

Abstract: A method of manufacturing tin-plated copper terminal material as a terminal crimped to a terminal end of an electric wire made of an aluminum wire material, using a base member of copper or copper alloy in which galvanic corrosion is not easy to occur and an adhesiveness of a tin layer is excellent, the method includes: a zinc-nickel alloy layer forming step forming a zinc-nickel alloy layer having a nickel content of 5 mass % to 50 mass % inclusive and a thickness of 0.1 ?m to 5.0 ?m inclusive on a base member made of copper or copper alloy; and a tin-plating step forming a tin layer by tin plating on the zinc-nickel alloy layer; more preferably, following the tin-plating step, the method includes a diffusion treatment step diffusing zinc from the zinc-nickel alloy layer to the tin layer by maintaining at 40° C. to 160° C. inclusive for 30 minutes or longer.

Abstract: A method for manufacturing a semiconductor device and an underfill film which can achieve voidless mounting and excellent solder bonding properties even in the case of collectively bonding a plurality of semiconductor chips are provided. The method includes a mounting step of mounting a plurality of semiconductor chips having a solder-tipped electrode onto an electronic component having a counter electrode opposing the solder-tipped electrode via an underfill film; and a compression bonding step of collectively bonding the plurality of semiconductor chips to the electronic component via the underfill film. The underfill film contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide and has a minimum melt viscosity of 1,000 to 2,000 Pa*s and a melt viscosity gradient of 900 to 3,100 Pa*s/° C. from a temperature 10° C. higher than a minimum melt viscosity attainment temperature to a temperature 10° C. higher than the temperature.

Abstract: A method of manufacturing tin-plated copper terminal material as a terminal crimped to a terminal end of an electric wire made of an aluminum wire material, using a base member of copper or copper alloy in which galvanic corrosion is not easy to occur and an adhesiveness of a tin layer is excellent, the method includes: a zinc-nickel alloy layer forming step forming a zinc-nickel alloy layer having a nickel content of 5 mass % to 50 mass % inclusive and a thickness of 0.1 ?m to 5.0 ?m inclusive on a base member made of copper or copper alloy; and a tin-plating step forming a tin layer by tin plating on the zinc-nickel alloy layer; more preferably, following the tin-plating step, the method includes a diffusion treatment step diffusing zinc from the zinc-nickel alloy layer to the tin layer by maintaining at 40° C. to 160° C. inclusive for 30 minutes or longer.

Abstract: A resin substrate combined structure includes a first resin substrate including a flexible resin defining a main material and includes a first portion, a second resin substrate including a flexible resin defining a main material and includes a second portion spaced from the first portion in a thickness direction, and an insulating member that envelops the first portion and the second portion while retaining a relative positional relationship between the first portion and the second portion. The insulating member includes a material with a higher rigidity than any of the main material of the first resin substrate and that of the second resin substrate.

Abstract: A method for manufacturing a semiconductor device and an underfill film which can achieve voidless mounting and excellent solder bonding properties even in the case of collectively bonding a plurality of semiconductor chips are provided. The method includes a mounting step of mounting a plurality of semiconductor chips having a solder-tipped electrode onto an electronic component having a counter electrode opposing the solder-tipped electrode via an underfill film; and a compression bonding step of collectively bonding the plurality of semiconductor chips to the electronic component via the underfill film. The underfill film contains an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide and has a minimum melt viscosity of 1,000 to 2,000 Pa*s and a melt viscosity gradient of 900 to 3,100 Pa*s/° C. from a temperature 10° C. higher than a minimum melt viscosity attainment temperature to a temperature 10° C. higher than the temperature.

Abstract: The additive for high-purity copper electrolytic refining of the present invention is an additive which is added to a copper electrolyte in electrolytic refining for high-purity copper and is formed of a non-ionic surfactant that includes a hydrophobic group containing an aromatic ring and a hydrophilic group containing a polyoxyalkylene group, in which a dispersion term dD of the Hansen solubility parameters satisfies 10?dD?20, a polarity term dP of the Hansen solubility parameters satisfies 6?dP?9, and a hydrogen bonding term dH of the Hansen solubility parameters satisfies 9?dH?11.

Abstract: The additive for high-purity copper electrolytic refining of the present invention is an additive which is added to a copper electrolyte in electrolytic refining for high-purity copper and is formed of a non-ionic surfactant that includes a hydrophobic group containing an aromatic ring and a hydrophilic group containing a polyoxyalkylene group.

Abstract: Tin-plated copper-alloy material for terminal in which: a Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer is an alloy layer containing Cu6Sn5 as a major proportion and having a compound in which a part of Cu in the Cu6Sn5 is substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an average thickness of the Sn-based surface layer is 0.2 ?m or more and 0.6 ?m or less; an oil-sump depth Rvk of the Cu—Sn alloy layer is 0.2 ?m or more; an area rate of the Cu—Sn alloy layer exposed at a surface of the Sn-based surface layer is 10% or more and 40% or less; and dynamic friction coefficient is 0.3 or less.

Abstract: A resin substrate combined structure includes a first resin substrate including a flexible resin defining a main material and includes a first portion, a second resin substrate including a flexible resin defining a main material and includes a second portion spaced from the first portion in a thickness direction, and an insulating member that envelops the first portion and the second portion while retaining a relative positional relationship between the first portion and the second portion. The insulating member includes a material with a higher rigidity than any of the main material of the first resin substrate and that of the second resin substrate.

Abstract: The present invention provides an additive for high-purity copper electrolytic refining, a method of producing high-purity copper, and a high-purity electrolytic copper. This additive of the present invention for high-purity copper electrolytic refining can be added to a copper electrolyte in copper electrolytic refining. The additive includes a silver and chlorine reducing agent of electrolytic copper which is formed of tetrazoles which is one of a tetrazole and a tetrazole derivative.

Abstract: The present invention provides an additive for high-purity copper electrolytic refining and a method of producing high-purity copper using the additive. The additive of the present invention for high-purity copper electrolytic refining can be added to a copper electrolyte in electrolytic refining for producing high-purity copper. The additive includes a main agent formed of a non-ionic surfactant which has a hydrophobic group containing an aromatic ring and a hydrophilic group containing a polyoxyalkylene group, and a stress relaxation agent formed of a polyvinyl alcohol or a derivative thereof.

Abstract: A viewpoint position determination unit is configured to determine whether a viewpoint indicated by a viewpoint array signal is closer to a left-eye viewpoint or a right-eye viewpoint. A coefficient generation unit is configured to generate a coefficient based on the viewpoint array signal. A first selector is configured to select either a left-eye viewpoint image signal or a right-eye viewpoint image signal. A second selector is configured to select either a left-eye viewpoint depth value or a right-eye viewpoint depth value. A multiplier is configured to multiply the left-eye viewpoint depth value or the right-eye viewpoint depth value by the coefficient. A pixel shift unit is configured to carry out a pixel shift on the left-eye viewpoint image signal and the right-eye viewpoint image signal according to the depth value output from the multiplier, so as to generate a multi-viewpoint image signal.

Abstract: A method for producing a Cu—Sn layer and an Sn-based surface layer are formed in this order on the surface of a Cu-based substrate through an Ni-based base layer, and the Cu—Sn layer is composed of a Cu3Sn layer arranged on the Ni-based base layer and a Cu6Sn5 layer arranged on the Cu3Sn layer; the Cu—Sn layer obtained by bonding the Cu3Sn layer and the Cu6Sn5 layer is provided with recessed and projected portions on the surface which is in contact with the Sn-based surface layer; thicknesses of the recessed portions are set to 0.05 ?m to 1.5 ?m, the area coverage of the Cu3Sn layer with respect to the Ni-based base layer is 60% or higher, and the ratio of the thicknesses of the projected portions to the thicknesses of the recessed portions in the Cu—Sn layer is 1.2 to 5.

Abstract: An RB rate calculator calculates an RB rate based on an R signal and a B signal. A starting point changing unit changes a starting point based on the RB rate. An offset calculating unit calculates an offset value to adjust for selection of a basic depth model type based on a bottom high frequency component evaluation value. An adding unit adds a signal from the starting point changing unit and an offset. Another adding unit adds an offset-added signal from the adding unit and a basic depth model-composed image signal supplied from a composing unit, and generates depth estimation data wherein a degree of superimposition of object information is changed according to a composition of a composed image of basic depth models selected to be composed.

Abstract: Provided is a film-type thermistor sensor which can be surface-mounted and can be directly deposited on a film or the like without baking. The film-type thermistor sensor includes an insulating film; a thin-film thermistor part formed on the front side of the insulating film; the pair of front side pattern electrodes in which a pair of counter electrode parts facing each other is disposed above or below the thin-film thermistor part and is formed on the front side of the insulating film; and a pair of back side pattern electrodes formed on the back side of the insulating film in such a manner as to face a part of the pair of front side pattern electrodes, wherein the front side pattern electrodes and the back side pattern electrodes are electrically connected via via-holes formed so as to penetrate the insulating film.

Abstract: Tin-plated copper-alloy material for terminal having: a substrate made of Cu or Cu alloy; an Sn-based surface layer formed on a surface of the substrate; and a Cu—Ni—Sn alloy layer including Ni formed between the Sn-based surface layer and the substrate, in which the Cu—Ni—Sn alloy layer is made of: fine Cu—Ni—Sn alloy particles; and coarse Cu—Ni—Sn alloy particles, an average thickness of the Sn-based surface layer is not less than 0.2 ?m and not more than 0.6 ?m, an area ratio of the Cu—Ni—Sn alloy layer exposed at a surface of the Sn-based surface layer is not less than 10% and not more than 40%, and a coefficient of kinetic friction of the tin-plated copper-alloy material for terminal is not more than 0.3.

Abstract: Tin-plated copper-alloy material for terminal in which: a Sn-based surface layer is formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer is formed between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer is an alloy layer containing Cu6Sn5 as a major proportion and having a compound in which a part of Cu in the Cu6Sn5 is substituted by Ni and Si in the vicinity of a boundary face at the substrate side; an average thickness of the Sn-based surface layer is 0.2 ?m or more and 0.6 ?m or less; an oil-sump depth Rvk of the Cu—Sn alloy layer is 0.2 ?m or more; an area rate of the Cu—Sn alloy layer exposed at a surface of the Sn-based surface layer is 10% or more and 40% or less; and dynamic friction coefficient is 0.3 or less.

Abstract: A method for producing a Cu—Sn layer and an Sn-based surface layer are formed in this order on the surface of a Cu-based substrate through an Ni-based base layer, and the Cu—Sn layer is composed of a Cu3Sn layer arranged on the Ni-based base layer and a Cu6Sn5 layer arranged on the Cu3Sn layer; the Cu—Sn layer obtained by bonding the Cu3Sn layer and the Cu6Sn5 layer is provided with recessed and projected portions on the surface which is in contact with the Sn-based surface layer; thicknesses of the recessed portions are set to 0.05 ?m to 1.5 ?m, the area coverage of the Cu3Sn layer with respect to the Ni-based base layer is 60% or higher, and the ratio of the thicknesses of the projected portions to the thicknesses of the recessed portions in the Cu—Sn layer is 1.2 to 5.