Abstract: In a parallel hybrid vehicle employing a parallel hybrid system, using both an internal combustion engine and an electric motor generator for propulsion, a desired motor/generator torque is map-retrieved based on both the engine speed and throttle opening from a predetermined characteristic map in a fashion of feedforward processing. The signal indicative of the desired motor/generator torque is subjected to a low-pass filter that passes signals included in a frequency band lower than an oscillation frequency of powertrain torsional vibrations to remove the powertrain vibration frequency components. The map is preprogrammed so that the desired motor/generator torque is set at zero in a specified speed range lower than an engine idle speed.

Abstract: In a parallel hybrid vehicle employing a parallel hybrid system, using both an internal combustion engine and an electric motor generator for propulsion, a desired motor/generator torque is map-retrieved based on both the engine speed and throttle opening from a predetermined characteristic map in a fashion of feedforward processing. The signal indicative of the desired motor/generator torque is subjected to a low-pass filter that passes signals included in a frequency band lower than an oscillation frequency of powertrain torsional vibrations to remove the powertrain vibration frequency components. The map is preprogrammed so that the desired motor/generator torque is set at zero in a specified speed range lower than an engine idle speed.

Abstract: In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950° C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Abstract: An apparatus capable of detecting with improved accuracy a motion vector representing an object moved on a picture plane comprises a memory section for storing an input picture signal renewed for every predetermined time interval, a spatial filter section for applying a spatial band limitation to two signal portions of the renewed picture signal stored in the memory, which signal portions corresponding to the different time intervals, and a detecting section including at least one detecting stage for detecting the motion vector in accordance with the gradient method on the basis of the two picture signals and a minute value to be added to a gradient determined from one reference picture signal represented by one of the two picture signals.