Abstract: A document processing system includes: an activity storage; a business process narrative storage; a risk storage; a control storage; an information extracting unit; and a document preparing and outputting unit.

Abstract: A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.

Abstract: A surface acoustic wave sensor that achieves increased detection sensitivity includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, and a protection layer arranged on the piezoelectric substrate so as to cover the IDT electrode. The surface acoustic wave sensor is arranged so as to be excited by the IDT electrode in a high-order mode of an SH wave in which displacement at a surface of the protection layer and displacement near a boundary between the piezoelectric substrate and the IDT electrode have opposite directions, and the maximum displacement occurs at the surface of the protection layer.

Abstract: A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and ? of the Euler angles (0°±5°, ?±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: ?10×D+92.5?100×C???37.5×D2?57.75×D+104.075+5710×C2?1105.7×C+45.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.

Abstract: A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, ?±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Cu, a first silicon oxide film disposed in a region other than the region in which the electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is within the range of about 0.12? to about 0.18?, where ? represents the wavelength of a surface acoustic wave, and ? of the above-described Euler angles of (0°±5°, ?±5°, 0°±10°) is in the range satisfying the following Formula (1): ?=32.01?351.92×exp(?TCu/0.0187)??Formula (1) where TCu is a value of Cu electrode film thickness normalized with the wavelength ?.

Abstract: A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and ? of the Euler angles (0°±5, ?+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52?D?0.6, ?10×D+92.5?100×C???37.5×D2?57.75×D+104.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.

Abstract: A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, ?±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062? to about 0.14?, where ? represents the wavelength of a surface acoustic wave, and ? of the above-described Euler angles of (0°±5°, ?±5°, 0°±10°) is in the range satisfying the following Formula (1): ?=31.72?206.92×exp(?1×TAu/0.0138)??Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength ?.

Abstract: A surface acoustic wave device has high power withstanding performance and is able to effectively suppress an undesirable spurious response. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is disposed on the LiNbO3 substrate and that has an IDT electrode made mainly from Cu, a first silicon oxide film that is disposed in an area other than an area in which the electrode is disposed to have a thickness equal to that of the electrode, and a second silicon oxide film that is disposed so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode is less than or equal to about 0.49, and ? of the Euler angles (0°±5°, ?±5°, 0°±10°) is set to fall within a range that satisfies the following inequality: ?10×D+92.5?100×C???37.5×D2?57.75×D+104.075+5710×C2?1105.7×C+45.

Abstract: A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, ?±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and ? of the Euler angles (0°±5, ?+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52?D?0.6, ?10×D+92.5?100×C???37.5×D2?57.75×D+104.

Abstract: A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, ?±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Cu, a first silicon oxide film disposed in a region other than the region in which the electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is within the range of about 0.12? to about 0.18?, where ? represents the wavelength of a surface acoustic wave, and ? of the above-described Euler angles of (0°±5°, ?±5°, 0°±10°) is in the range satisfying the following Formula (1): ?=32.01?351.92×exp(?Tcu/0.0187)??Formula (1) where Tcu is a value of Cu electrode film thickness normalized with the wavelength ?.

Abstract: A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, 0±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062? to about 0.14?, where ? represents the wavelength of a surface acoustic wave, and ? of the above-described Euler angles of (0°±5°, 0±5°, 0°±10°) is in the range satisfying the following Formula (1): ?=31.72?206.92×exp (?1×TAu/0.0138) ??Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength ?.

Abstract: A surface acoustic wave device includes a LiNbO3 substrate having Euler angles (0°±5°, ?, 0°±10°), electrodes that are disposed on the LiNbO3 substrate, are primarily composed of Cu, and include an IDT electrode, a first silicon oxide film having substantially the same thickness as the electrodes and disposed in an area other than an area on which the electrodes including the IDT electrode are disposed, and a second silicon oxide film disposed on the electrodes and the first silicon oxide film, wherein the Euler angle ? and the normalized thickness H of the second silicon oxide film are selected to satisfy the formula 1 or 2: ?50×H2?3.5×H+38.275?{?}?10H+35 (wherein H<0.25)??Formula 1 ?50×H2?3.5×H+38.275?{?}?37.5 (wherein H>0.25)??Formula 2.

Abstract: A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001?, where the wavelength of an acoustic wave is ?.

Abstract: A document processing apparatus includes an activity input unit and a document creation unit. The activity input unit allows a user to input activities each including a name of the activity and a task description. The document creation unit creates, based on the activities input through the activity input unit, a document for an inner control including at least one of a business process narrative describing a flow of each business process, a business flow diagram visually describing the flow of each business process, a risk control matrix indicating assumed risks and control activities corresponding to the respective risk and a separation-of-duties table showing a correspondence relation between a person in charge and each business process.

Abstract: In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

Abstract: An information processing system includes a receiving unit, a risk control matrix storage unit and a dummy control setting unit. The receiving unit receives assumed risks and controls corresponding to the assumed risks. The risk control matrix storage unit stores a risk control matrix in which a correspondence relation between the risks and the controls is described. If evaluation of design effectiveness is performed to check a document regarding an operation to be controlled in an internal control of operations and if the dummy control setting unit determines that there is a risk having no control corresponding thereto in the risk control matrix stored in the risk control matrix storage unit, the dummy control setting unit sets a dummy control for the risk having no corresponding control in the risk control matrix and stores the risk control matrix.

Abstract: In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.