Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: A memory system includes a nonvolatile memory, a memory controller, and a control circuit including a buffer and configured to store a first address transmitted by the memory controller in the buffer, generate a second address based on the first address stored in the buffer, and transmit the generated second address to the nonvolatile memory.

Abstract: A memory system including a plurality of nonvolatile memories and a controller. The controller is connected to the plurality of nonvolatile memories via a plurality of channels. The nonvolatile memory stores a first parameter indicating a delay value. The controller acquires the first parameter from the nonvolatile memory. The controller delays start timing of data transfer to the nonvolatile memory via a channel among the plurality of channels by a delay value according to the first parameter.

Abstract: A memory system includes a nonvolatile memory and a memory controller including a bus, a cache memory, a direct memory access controller, a first search circuit, a second search circuit, and a transfer control circuit. The direct memory access controller transfers cache target data stored in the nonvolatile memory to the cache memory. The second search circuit searches the cache target data that is being transferred. The transfer control circuit assigns, in response to the second search circuit detecting a search hit, to the transfer control circuit and the second search circuit, a bus right which has been assigned at least to the cache memory for the transfer of the cache target data to the cache memory, and obtains, by using the assigned bus right, a search result from the second search circuit via the bus.

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: A memory system includes a nonvolatile memory, and a memory controller configured to control the nonvolatile memory. The nonvolatile memory stores a busy table. The memory controller loads the busy table and controls a chip enable signal for the nonvolatile memory based on the busy table.

Abstract: According to one embodiment, there is provided a memory system including a controller, a plurality of memory chips, and a channel. The controller outputs a clock signal, a timing control signal and a data signal. Each of the plurality of memory chips includes at least a clock input terminal, a timing control input terminal, a timing control output terminal, a data input terminal and a data output terminal. The channel includes a loop bus which connects the controller and the plurality of memory chips in a ring shape. The controller is able to control operation timings of the memory chips by transmitting the clock signal and the timing control signal to the plurality of memory chips via the channel.

Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: A memory system includes a nonvolatile memory, and a memory controller configured to control the nonvolatile memory. The nonvolatile memory stores a busy table. The memory controller loads the busy table and controls a chip enable signal for the nonvolatile memory based on the busy table.

Abstract: A memory controller includes a host interface circuit connectable to a host device by a bus conforming to a memory card system specification, a data buffer circuit including a buffer memory, a tag information generation circuit configured to generate tag information associated with a command received by the host interface circuit, and a first register in which the tag information generated by the tag information generation circuit is stored, and a second register into which the tag information stored in the first register is copied after the command is fetched from the host interface circuit for processing. When a read request is made from the host interface circuit to the data buffer circuit, the data buffer circuit returns read data stored in the buffer memory upon confirming that the tag information stored in the first register and the tag information stored in the second register match each other.

Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: According to one embodiment, there is provided a memory system including a controller, a plurality of memory chips, and a channel. The controller outputs a clock signal, a timing control signal and a data signal. Each of the plurality of memory chips includes at least a clock input terminal, a timing control input terminal, a timing control output terminal, a data input terminal and a data output terminal. The channel includes a loop bus which connects the controller and the plurality of memory chips in a ring shape. The controller is able to control operation timings of the memory chips by transmitting the clock signal and the timing control signal to the plurality of memory chips via the channel.

Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

Abstract: A memory controller includes a host interface circuit connectable to a host device by a bus conforming to a memory card system specification, a data buffer circuit including a buffer memory, a tag information generation circuit configured to generate tag information associated with a command received by the host interface circuit, and a first register in which the tag information generated by the tag information generation circuit is stored, and a second register into which the tag information stored in the first register is copied after the command is fetched from the host interface circuit for processing. When a read request is made from the host interface circuit to the data buffer circuit, the data buffer circuit returns read data stored in the buffer memory upon confirming that the tag information stored in the first register and the tag information stored in the second register match each other.

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

Abstract: According to one embodiment, a storage device includes a storage medium, a DLL circuit, a latch circuit, and a delay amount adjustment circuit. The DLL circuit gives a predetermined amount of delay to an inputted clock signal, the latch circuit latches data outputted from the storage medium in accordance with the clock signal delayed in the DLL circuit, the delay amount adjustment circuit adjusts the delay amount that the DLL circuit is to give to the clock signal based on a latch result by the latch circuit.

Abstract: According to one embodiment, a memory system includes a memory cell array, first error correction part, second error correction part, and third error correction part. The memory cell array includes a first storage area in which 1-bit data is stored in one memory cell, and second storage area in which data of a plurality of bits is stored in one memory cell. When data is written to the first storage area, the first error correction part generates first parity data in the row direction on the basis of the data described above. The second error correction part corrects an error of the data described above on the basis of the first parity data read from the memory cell array. The third error correction part generates second parity data in the column direction on the basis of data of a plurality of pages.