Abstract: A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of:(1) providing a substrate having a surface of smaller nucleation density;(2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated;(3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and(4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point.

Abstract: A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.

Abstract: A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.

Abstract: A process of growing a monocrystal on an insulating film provided on a metal electrode, which comprises: providing a semiconductor film on a substrate having a metal electrode and an insulating film; causing the semiconductor film and the insulating film to undergo the solid phase reaction at the interface therebetween; forming a monocrystalline cohering body of the semiconductor film at the opening of the insulating film by applying annealing for cohesion of the semiconductor film on the metal electrode; and allowing a monocrystal to grow with the monocrystalline cohering body as a seed.

Abstract: A method for forming a crystal, which comprises applying, on a substrate having a primary seed comprising a non-single crystaline material having a surface area fine enough to be agglomeratable into a single single-crystalline body by heat treatment and a non-nucleation surface with smaller nucleation density than said primary seed, a heat treatment for agglomerating said primary seed to form a single crystalline seed in an atmosphere containing hydrogen gas at a temperature lower than the temperature at which said primary seed is melted, and applying a crystal growth treatment, thereby permitting a single crystal to grow with said seed as the origination point.

Abstract: Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.

Abstract: A process for producing a compound semiconductor comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S.sub.NDS) with smaller nucleation density and a nucleation surface (S.sub.NDL) arranged adjacent thereto having a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said nonnucleation surface (S.sub.NDS), by exposing the substrate to either of the gas phases:(a) gas phase (a) containing a starting material (II) for feeding the group II atoms of the periodic table and a starting material (VI) for feeding the group VI atoms of the periodic table and(b) gas phase (b) containing a starting material (III) for feeding the group III atoms of the periodic table and a starting material (V) for feeding the group V atoms of the periodic table, thereby forming only a single nucleus on said nucleation surface (S.sub.

Abstract: A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.

Abstract: A luminance-chrominance signal separation circuit in which only those values of a digitized video signal which do not manifest drop-out are used for producing a luminance and a chrominance signal from linear combinations of the video signals. Different combinations are used depending on the locations of the drop-out.

Abstract: A digital television circuit in which the analog FM video signal is first digitized and all processing is performed digitally, including FM demodulation. Clocks at the subcarrier frequency and four times this frequency are synchronized with the horizontal synchronizing circuit or color burst signal.

Abstract: In order to obtain sufficiently long values of T.sub.min and T.sub.w data conversion, and to reduce the dc or the low frequency component, a method for converting a binary data train comprises a first step for dividing the binary data train into a plurality of successive blocks each having M (M being a natural number) bit data, a second step for converting the M bit data into N (N being a natural number, and where N.gtoreq.M+1), and a third step for converting the N bit data in every L (L being a natural number) blocks into J (J being a natural number) bit data.

Abstract: Novel 2,3-dihydro-indene derivatives having remarkable anti-inflammatory effects and represented by the following formula ##STR1## wherein R.sup.1 and R.sup.2 are each a hydrogen atom, halogen atom, nitro group, lower alkyl group or lower alkyloxy group with the proviso that R.sup.1 and R.sup.2 do not take a hydrogen atom at the same time, and n is an integer of 2-4.

Abstract: An antiallergic composition comprising, as the effective ingredient, a compound represented by the following general formula ##STR1## wherein R is n-butyl group or n-pentyl group, the compound being preferably supported by a carrier such as sugar, starch, gum arabic or calcium stearate.

Abstract: The present invention relates to novel cyclohexanecarboxylic acid and its derivatives represented by the general formula: ##STR1## (wherein R.sup.1 is selected from the group consisting of hydrogen or methyl; R.sup.2 is selected from the group consisting of hydroxyl, lower alkoxy with 1-6 carbons or amino acid rest. In case R.sup.1 is hydrogen, however, R.sup.