Abstract: Some embodiments include a plasma system comprising: a plasma chamber, an RF plasma generator, a bias generator, and a controller. The RF plasma generator may be electrically coupled with the plasma chamber and may produce a plurality of RF bursts, each of the plurality of RF bursts including RF waveforms, each of the plurality of RF bursts having an RF burst turn on time and an RF burst turn off time. The bias generator may be electrically coupled with the plasma chamber and may produce a plurality of bias bursts, each of the plurality of bias bursts including bias pulses, each of the plurality of bias bursts having an bias burst turn on time and an bias burst turn off time. In some embodiments the controller is in communication with the RF plasma generator and the bias generator that controls the timing of various bursts or waveforms.

Abstract: In some embodiments, a system includes a surface processor and a tool drill string having a downhole device including a downhole processor. The surface processor may include a memory storing instructions, and the surface processor may be communicatively coupled to the downhole processor. The surface processor may be configured to execute the instructions to receive one or more first measurements from the downhole device, and determine whether the one or more first measurements satisfy a threshold measurement. Responsive to determining the one or more first measurements satisfy the threshold measurement, the surface processor may electronically modify a weight on bit by a first amount and electronically modify a revolutions per minute of a motor by a second amount.

Abstract: Systems and methods for determining a vehicle elevation height for launching an unmanned aerial vehicle may include performing a quantitative balancing analysis using baseline factors, establishing optimal values for operational goals of a vehicle based on the quantitative balancing analysis, determining a vehicle elevation height that achieves the established optimal values for the operational goals of the vehicle by evaluating vehicle delivery parameters using normalized values, and initiating on a winch system elevation of the unmanned aerial vehicle to the determined vehicle elevation height for launching.

Abstract: In some embodiments, a system may include a tool drill string having a downhole device. The system may include a contact module including a first component. The first component may include a first data path capable of communicating data using a first communication protocol, a second data path capable of communicating the data using a second communication protocol, and a processor electrically connected to the first data path and the second data path. The processor may be capable of selectively routing the data between the first data path and the second data path.

Abstract: Some embodiments include a high voltage pulsing circuit comprising: a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a pulse repetition frequency greater than 1 kHz; a bias compensation circuit arranged in parallel with the output the bias compensation circuit comprising; first inductance comprising the inductive elements and any stray inductance between the bias compensation circuit and the high voltage pulsing power supply; and second inductance comprising the inductive elements and any stray inductance between the bias compensation circuit and the output.

Abstract: In some embodiments, a high voltage power supply is disclosed that provides a plurality of high voltage pulses without any voltage droop between two subsequent pulses. In some embodiments, a high voltage power supply is disclosed that provides a waveform of voltage versus time having a plurality of high voltage pulses having a voltage greater than 1 kV and with a substantially flat portion between pulse. In some embodiments, a high voltage power supply is disclosed that includes a snubber with a snubber resistor having a resistance of about 7.5 m?-1.25?; and a snubber capacitor having a capacitance of about 2 ?F-35 ?F.

Abstract: Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

Abstract: Some embodiments include a nanosecond pulser circuit. In some embodiments, a nanosecond pulser circuit may include: a high voltage power supply; a nanosecond pulser electrically coupled with the high voltage power supply and switches voltage from the high voltage power supply at high frequencies; a transformer having a primary side and a secondary side, the nanosecond pulser electrically coupled with the primary side of the transformer; and an energy recovery circuit electrically coupled with the secondary side of the transformer. In some embodiments, the energy recovery circuit comprises: an inductor electrically coupled with the high voltage power supply; a crowbar diode arranged in parallel with the secondary side of the transformer; and a second diode disposed in series with the inductor and arranged to conduct current from a load to the high voltage power supply.

Abstract: A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

Abstract: In some embodiments, a system may include a tool drill string having a downhole device. The system may include a contact module including a first component. The first component may include a first data path capable of communicating data using a first communication protocol, a second data path capable of communicating the data using a second communication protocol, and a processor electrically connected to the first data path and the second data path. The processor may be capable of selectively routing the data between the first data path and the second data path.

Abstract: A nanosecond pulser system is disclosed. In some embodiments, the nanosecond pulser system may include a nanosecond pulser having a nanosecond pulser input; a plurality of switches coupled with the nanosecond pulser input; one or more transformers coupled with the plurality of switches; and an output coupled with the one or more transformers and providing a high voltage waveform with a amplitude greater than 2 kV and a frequency greater than 1 kHz based on the nanosecond pulser input. The nanosecond pulser system may also include a control module coupled with the nanosecond pulser input; and an control system coupled with the nanosecond pulser at a point between the transformer and the output, the control system providing waveform data regarding an high voltage waveform produced at the point between the transformer and the output.

Abstract: Some embodiments include a plasma sheath control system that includes an RF power supply producing an A sinusoidal waveform with a frequency greater than 20 kHz and a peak voltage greater than 1 kV and a plasma chamber electrically coupled with the RF power supply, the plasma chamber having a plurality of ions that are accelerated into a surface disposed with energies greater than about 1 kV, and the plasma chamber produces a plasma sheath within the plasma chamber from the sinusoidal waveform. The plasma sheath control system includes a blocking diode electrically connected between the RF power supply and the plasma chamber and a capacitive discharge circuit electrically coupled with the RF power supply, the plasma chamber, and the blocking diode; the capacitive discharge circuit discharges capacitive charges within the plasma chamber with a peak voltage greater than 1 kV and a discharge time that less than 250 nanoseconds.

Abstract: In some embodiments, a high voltage power supply is disclosed that provides a plurality of high voltage pulses without any voltage droop between two subsequent pulses. In some embodiments, a high voltage power supply is disclosed that provides a waveform of voltage versus time having a plurality of high voltage pulses having a voltage greater than 1 kV and with a substantially flat portion between pulse. In some embodiments, a high voltage power supply is disclosed that includes a snubber with a snubber resistor having a resistance of about 7.5 m?-1.25?; and a snubber capacitor having a capacitance of about 2 ?F-35 ?F.

Abstract: A high voltage power system is disclosed. In some embodiments, the high voltage power system includes a high voltage pulsing power supply; a transformer electrically coupled with the high voltage pulsing power supply; an output electrically coupled with the transformer and configured to output high voltage pulses with an amplitude greater than 1 kV and a frequency greater than 1 kHz; and a bias compensation circuit arranged in parallel with the output. In some embodiments, the bias compensation circuit can include a blocking diode; and a DC power supply arranged in series with the blocking diode.

Abstract: Some embodiments include methods and systems for wafer biasing in a plasma chamber. A method, for example, may include: generating a first high voltage by a first pulsed voltage source using DC voltages and coupling the first high voltage to a wafer in the plasma chamber via at least one direct connection, the at least one direct connection enabling ion energy control in the plasma chamber; generating one or more of low and medium voltages by a second pulsed voltage source; coupling, capacitively, the one or more of low and medium voltages to the wafer; and pulsing the first high voltage and the one or more of low and medium voltages to achieve a configurable ion energy distribution in the wafer.

Abstract: In some embodiments, a system includes a surface processor and a tool drill string having a downhole device including a downhole processor. The surface processor may include a memory storing instructions, and the surface processor may be communicatively coupled to the downhole processor. The surface processor may be configured to execute the instructions to receive one or more first measurements from the downhole device, and determine whether the one or more first measurements satisfy a threshold measurement. Responsive to determining the one or more first measurements satisfy the threshold measurement, the surface processor may electronically modify a weight on bit by a first amount and electronically modify a revolutions per minute of a motor by a second amount.

Abstract: Some embodiments include a thermal management system for a nanosecond pulser. In some embodiments, the thermal management system may include a switch cold plates coupled with switches, a core cold plate coupled with one or more transformers, resistor cold plates coupled with resistors, or tubing coupled with the switch cold plates, the core cold plates, and the resistor cold plates. The thermal management system may include a heat exchanger coupled with the resistor cold plates, the core cold plate, the switch cold plate, and the tubing. The heat exchanger may also be coupled with a facility fluid supply.

Abstract: Embodiments of the invention include a plasma system. The plasma system includes a plasma chamber; an RF driver configured to drive bursts into the plasma chamber with an RF frequency; a nanosecond pulser configured to drive pulses into the plasma chamber with a pulse repetition frequency, the pulse repetition frequency being less than the RF frequency; a high pass filter disposed between the RF driver and the plasma chamber; and a low pass filter disposed between the nanosecond pulser and the plasma chamber.

Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Abstract: In some embodiments, a system may include a tool drill string having a downhole device. The system may include a contact module including a first component. The first component may include a first data path capable of communicating data using a first communication protocol, a second data path capable of communicating the data using a second communication protocol, and a processor electrically connected to the first data path and the second data path. The processor may be capable of selectively routing the data between the first data path and the second data path.