Patents by Inventor Kenneth J. Giewont

Kenneth J. Giewont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11934008
    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
    Type: Grant
    Filed: December 19, 2022
    Date of Patent: March 19, 2024
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Patent number: 11837851
    Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
    Type: Grant
    Filed: September 14, 2022
    Date of Patent: December 5, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Roderick A. Augur, Michal Rakowski, Kenneth J. Giewont, Karen A. Nummy
  • Patent number: 11803012
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Grant
    Filed: November 15, 2022
    Date of Patent: October 31, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Publication number: 20230333318
    Abstract: Disclosed is a photonic integrated circuit (PIC) structure including a first waveguide core with a first end portion, a second waveguide core with a second end portion overlaying and physically separated from the first end portion, and a coupler configured to facilitate low-loss optical signal transmission between the waveguide cores. The coupler can include at least one array of photonic material elements (e.g., photonic crystal elements or photonic metamaterial elements) embedded in cladding material between the end portions. Alternatively, the coupler can include at least one photonic material layer (e.g., a photonic crystal layer or a photonic metamaterial layer) between and physically separated from the end portions and an array of cladding material elements extending through the photonic material layer. Also disclosed is a PIC structure including an on-chip system (e.g., a photonic computing system) including a crossing array implemented using any of the above-described couplers.
    Type: Application
    Filed: April 19, 2022
    Publication date: October 19, 2023
    Applicant: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Kenneth J. Giewont
  • Patent number: 11662523
    Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: May 30, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Publication number: 20230117802
    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
    Type: Application
    Filed: December 19, 2022
    Publication date: April 20, 2023
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Publication number: 20230073958
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 9, 2023
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Patent number: 11567261
    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
    Type: Grant
    Filed: February 11, 2021
    Date of Patent: January 31, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Patent number: 11555964
    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide.
    Type: Grant
    Filed: June 30, 2021
    Date of Patent: January 17, 2023
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Michal Rakowski, Petar I. Todorov, Yusheng Bian, Won Suk Lee, Asif J. Chowdhury, Kenneth J. Giewont
  • Publication number: 20230011972
    Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
    Type: Application
    Filed: September 14, 2022
    Publication date: January 12, 2023
    Inventors: Yusheng Bian, Roderick A. Augur, Michal Rakowski, Kenneth J. Giewont, Karen A. Nummy
  • Patent number: 11536903
    Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. A first waveguide core has a first section that has a tapered shape and a second section that is adjoined to the first section. Multiple segments are positioned with a spaced arrangement adjacent to an end surface of the second section of the first waveguide core. A slab layer is adjoined to the first section of the first waveguide core. A second waveguide core has a section that overlaps with the first section of the first waveguide core to define a layer stack. The section of the second waveguide core has a tapered shape, and the first and second waveguide cores are comprised of different materials. The first section of the first waveguide core has a first thickness, and the slab layer has a second thickness that is less than the first thickness.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: December 27, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Theodore Letavic, Yusheng Bian, Kenneth J. Giewont, Karen Nummy
  • Patent number: 11531164
    Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes a dielectric layer including an edge, a waveguide core region on the dielectric layer, and multiple segments on the dielectric layer. The waveguide core region has an end surface, and the waveguide core region is lengthwise tapered toward the end surface. The segments are positioned between the waveguide core region and the edge of the dielectric layer. A waveguide core has a section positioned over the waveguide core region in an overlapping arrangement. The waveguide core has an end surface, and the section of the waveguide core is lengthwise tapered toward the end surface.
    Type: Grant
    Filed: February 8, 2021
    Date of Patent: December 20, 2022
    Assignee: GlobalFoundries U.S. Inc.
    Inventors: Kevin K. Dezfulian, Yusheng Bian, Kenneth J. Giewont, Karen Nummy
  • Patent number: 11515685
    Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
    Type: Grant
    Filed: February 4, 2021
    Date of Patent: November 29, 2022
    Assignee: GLOBALFOUNDRIES U.S. Inc.
    Inventors: Yusheng Bian, Roderick A. Augur, Michal Rakowski, Kenneth J. Giewont, Karen A. Nummy
  • Patent number: 11487059
    Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: November 1, 2022
    Assignee: GLOBALFOUNDRIES U.S. INC.
    Inventors: Asli Sahin, Karen A. Nummy, Thomas Houghton, Kevin K. Dezfulian, Kenneth J. Giewont, Yusheng Bian
  • Publication number: 20220268994
    Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).
    Type: Application
    Filed: February 19, 2021
    Publication date: August 25, 2022
    Inventors: Asli Sahin, Karen A. Nummy, Thomas Houghton, Kevin K. Dezfulian, Kenneth J. Giewont, Yusheng Bian
  • Publication number: 20220252790
    Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes a dielectric layer including an edge, a waveguide core region on the dielectric layer, and multiple segments on the dielectric layer. The waveguide core region has an end surface, and the waveguide core region is lengthwise tapered toward the end surface. The segments are positioned between the waveguide core region and the edge of the dielectric layer. A waveguide core has a section positioned over the waveguide core region in an overlapping arrangement. The waveguide core has an end surface, and the section of the waveguide core is lengthwise tapered toward the end surface.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 11, 2022
    Inventors: Kevin K. Dezfulian, Yusheng Bian, Kenneth J. Giewont, Karen Nummy
  • Publication number: 20220252785
    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.
    Type: Application
    Filed: February 11, 2021
    Publication date: August 11, 2022
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Publication number: 20220247148
    Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.
    Type: Application
    Filed: February 4, 2021
    Publication date: August 4, 2022
    Inventors: Yusheng Bian, Roderick A. Augur, Michal Rakowski, Kenneth J. Giewont, Karen A. Nummy
  • Publication number: 20220229250
    Abstract: Structures including an edge coupler and methods of forming a structure including an edge coupler. The structure includes a waveguide core over a dielectric layer and a back-end-of-line stack over the dielectric layer and the waveguide core. The back-end-of-line stack includes a side edge and a truncated layer that is overlapped with a tapered section of the waveguide core. The truncated layer has a first end surface adjacent to the side edge and a second end surface above the tapered section of the waveguide core. The truncated layer is tapered from the first end surface to the second end surface.
    Type: Application
    Filed: January 19, 2021
    Publication date: July 21, 2022
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy
  • Publication number: 20220221650
    Abstract: Structures including a grating coupler and methods of fabricating a structure including a grating coupler. The structure includes structure includes a dielectric layer on a substrate, a first waveguide core positioned in a first level over the dielectric layer, and a second waveguide core positioned in a second level over the dielectric layer. The second level differs in elevation above the dielectric layer from the first level. The first waveguide core includes a tapered section. The structure further includes a grating coupler having a plurality of segments positioned in the second level adjacent to the second waveguide core. The segments of the grating coupler and the tapered section of the first waveguide core are positioned in an overlapping arrangement.
    Type: Application
    Filed: January 12, 2021
    Publication date: July 14, 2022
    Inventors: Yusheng Bian, Roderick A. Augur, Kenneth J. Giewont, Karen Nummy, Edward Kiewra, Steven M. Shank