Patents by Inventor Kenneth J. Giewont

Kenneth J. Giewont has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR IMPROVED FABRICATION OF SALICIDE STRUCTURES
    Publication number: 20020142616
    Abstract: A method for preparing a semiconductor material for the formation of a silicide layer on selected areas thereupon is disclosed. In an exemplary embodiment of the invention, the method includes removing at least one of a nitride and an oxynitride film from the selected areas, removing metallic particles from the selected areas, removing surface particles from the selected areas, removing organics from the selected areas, and removing an oxide layer from the selected areas.
    Type: Application
    Filed: March 30, 2001
    Publication date: October 3, 2002
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kenneth J. Giewont, Yun Yu Wang, Russell Arndt, Craig Ransom, Judith Coffin, Anthony Domenicucci, Michael MacDonald, Brian E. Johnson
  • Capping layer for improved silicide formation in narrow semiconductor structures
    Patent number: 6388327
    Abstract: A capping layer for a semiconductor structure is described. The capping layer is deposited over a silicide-forming metal and has a composition such that nitrogen diffusion therefrom is insufficient to cause formation of an oxynitride from an oxide layer on the underlying silicon. The capping layer may be a metal layer from which no N diffusion occurs, or one or more layers including Ti and/or TiN arranged so that N atoms do not reach the oxide layer. A method is also described for forming the Ti and TiN layers. It is advantageous to deposit non-stoichiometric TiN deficient in N, by sputtering from a Ti target in a nitrogen flow insufficient to cause formation of a nitride on the target.
    Type: Grant
    Filed: January 9, 2001
    Date of Patent: May 14, 2002
    Assignee: International Business Machines Corporation
    Inventors: Kenneth J. Giewont, Stephen Bruce Brodsky, Cyril Cabral, Jr., Anthony G. Domenicucci, Craig Mitchell Ransom, Yun-Yu Wang, Horatio S. Wildman, Kwong Hon Wong
  • Prevention of agglomeration and inversion in a semiconductor polycide process
    Patent number: 5518958
    Abstract: Conductors are fabricated by forming a layer of doped polysilicon on a semiconductor substrate, forming a nitrogen-enriched conductive layer on the layer of doped polysilicon, wherein nitrogen contained in the nitrogen-enriched conductive layer provides for improved thermal stability thereof, and patterning the nitrogen-enriched conductive layer and layer of doped polysilicon so as to form the conductors.
    Type: Grant
    Filed: July 29, 1994
    Date of Patent: May 21, 1996
    Assignee: International Business Machines Corporation
    Inventors: Kenneth J. Giewont, Anthony J. Yu
  • Prevention of agglomeration and inversion in a semiconductor salicide process
    Patent number: 5449631
    Abstract: A conductor is fabricated by forming a layer of doped polysilicon on a semiconductor substrate, patterning the layer of doped polysilicon so as to form a conductor, forming a nitrogen-enriched metal film on the conductor, and converting the nitrogen-enriched metal film to a nitrogen-enriched metal silicide film, wherein nitrogen contained in the nitrogen-enriched metal silicide film provides for improved thermal stability thereof.
    Type: Grant
    Filed: July 29, 1994
    Date of Patent: September 12, 1995
    Assignee: International Business Machines Corporation
    Inventors: Kenneth J. Giewont, Anthony J. Yu