Abstract: According to one embodiment of the present invention, a method for bank sparing in a 3D memory device that includes detecting, by a memory controller, a first error in the 3D memory device and detecting a second error in a first element in a first rank of the 3D memory device, wherein the first element in the first rank has an associated first chip select. The method also includes sending a command to the 3D memory device to set mode registers in a master logic portion of the 3D memory device that enable a second element to receive communications directed to the first element and wherein the second element is in a second rank of the 3D memory device, wherein the first element and second element are each either a bank or a bank group that comprise a plurality of chips.

Abstract: A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.

Abstract: An embodiment is a method for operating a memory system, the method including storing initial calibration values for each of a first frequency and second frequency for a memory device, performing a periodic calibration to determine a calibration update value for operation of the memory device at the first frequency, combining the calibration update value with the initial calibration value for the first frequency to provide an updated calibration for operation of the memory device at an operating frequency of the first frequency and receiving a frequency change request at a memory controller associated with the memory device. The method further includes blocking traffic to the memory device, adjusting operating frequency to the second frequency while the memory device remains powered, combining the calibration update value with the initial calibration value for the second frequency for operation at the second frequency and enabling traffic to the memory device.

Abstract: An embodiment is a method includes writing a first set of memory device parameters to a first mode register in a memory device, wherein the first set of memory device parameters correspond to a first frequency, monitoring selected parameters for the memory system while the memory device operates at the first frequency and predicting a second frequency that the memory device will operate at subsequent to the first frequency, the predicting being based on the monitored selected parameters. The method further includes writing a second set of memory device parameters to second mode register in the memory device, receiving a frequency change request at a memory controller associated with the memory device, the frequency change request to operate at a new frequency and updating the first mode register with the second set of memory device parameters from the second mode register responsive to the new frequency being equal to the second frequency.

Abstract: A technique for memory command throttling in a partitioned memory subsystem includes accepting, by a master memory controller included in multiple memory controllers, a synchronization command. The synchronization command includes command data that includes an associated synchronization indication (e.g., a synchronization bit or bits) for each of the multiple memory controllers and each of the multiple memory controllers controls a respective partition of the partitioned memory subsystem. In response to receiving the synchronization command, the master memory controller forwards the synchronization command to the multiple memory controllers. In response to receiving the forwarded synchronization command each of the multiple memory controllers de-asserts an associated status bit. In response to receiving the forwarded synchronization command, each of the multiple memory controllers determines whether the associated synchronization indication is asserted.

Abstract: Mechanisms are provided for efficient storage of meta-bits within a system memory. The mechanisms combine an L/G bit and an SUE bit to form meta-bits. The mechanisms then determine the local/global state of a cache line on the first cycle of data. The mechanisms forward the data to the requesting cache, and the requesting cache may reissue the request globally based on the local/global state of the cache line. The mechanisms then determine the special uncorrectable error state of the cache line on the second or subsequent cycle of data. The mechanisms perform error processing regardless of whether the request was reissued globally.

Abstract: Mechanisms are provided for efficient storage of meta-bits within a system memory. The mechanisms combine an L/G bit and an SUE bit to form meta-bits. The mechanisms then determine the local/global state of a cache line on the first cycle of data. The mechanisms forward the data to the requesting cache, and the requesting cache may reissue the request globally based on the local/global state of the cache line. The mechanisms then determine the special uncorrectable error state of the cache line on the second or subsequent cycle of data. The mechanisms perform error processing regardless of whether the request was reissued globally.

Abstract: A system to improve memory failure management may include memory, and an error control decoder to determine failures in the memory. The system may also include an agent that may monitor failures in the memory. The system may further include a table where the error control decoder may record the failures, and where the agent can read and write to.

Abstract: A system to improve error correction includes a fast decoder to process data packets until the fast decoder finds an uncorrectable error in a data packet at which point a request for at least two data packets is generated. The system also includes a slow decoder to correct the uncorrectable error in a data packet based upon the at least two data packets.

Abstract: A system to improve miscorrection rates in error control code may include an error control decoder with a safe decoding mode that processes at least two data packets. The system may also include a buffer to receive the processed at least two data packets from the error control decoder. The error control decoder may apply a logic OR operation to the uncorrectable error signal related to the processing of the at least two data packets to produce a global uncorrectable error signal. The system may further include a recipient to receive the at least two data packets and the global uncorrectable error signal.

Abstract: A method and circuit for implementing enhanced memory reliability using memory scrub operations to determine a frequency of intermittent correctable errors, and a design structure on which the subject circuit resides are provided. A memory scrub for intermittent performs at least two reads before moving to a next memory scrub address. A number of intermittent errors is tracked where an intermittent error is identified, responsive to identifying one failing read and one passing read of the at least two reads.

Abstract: Methods, systems, and computer program products are provided for dynamic selective memory mirroring in solid state devices. An amount of memory is reserved. Sections of the memory to select for mirroring in the reserved memory are dynamically determined. The selected sections of the memory contain critical areas. The selected sections of the memory are mirrored in the reserved memory.

Abstract: A method and apparatus for controlling marking store updates in a central electronic complex with a plurality of core processors and eDRAM cache and interconnect bus to a service processor for loading memory controller firmware to dual-channel DDR3 memory controllers with an internal marking store. Loaded firmware of the memory controllers is responsible for tracking of ECC errors using a ECC decoder control whereby said marking store is written by a slow ECC decoder, and read by a fast ECC decoder for every read operation of said memory controllers to provide a blocking mechanism for notifying marking store firmware when the marking store has been updated and which guarantees that marking store firmware cannot write to the marking store until the marking store firmware has seen updates without causing the marking store hardware to time out.

Abstract: Isolation of faulty links in a transmission medium including a method that includes receiving an atomic data unit via a multi-link transmission medium that has a plurality of transmission links An error condition is detected and it is determined that the error condition is isolated to a single transmission link. It is determined if the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer. If the single transmission link has been isolated previously as a failing transmission link a specified number of times within an interval specified by a timer then: identifying the single transmission link as a faulty transmission link; resetting the timer; and outputting an identifier of the single transmission link.

Abstract: The present invention provides systems and methods to realize the potential benefit of portable storage devices by taking advantage of standard PCs including an optical disk drive capable of reading an optical disk, such as a CD or a DVD, cost effective optical disks, and the Internet. In a preferred embodiment, an individual patient provides personal data to a healthcare service center. The healthcare service center then creates a portable optical disk for the patient to carry, if he/she so desires. The personal data that is written onto the portable optical disk is stored on a database management server database and is readable and updateable by the individual patient using his/her PC with an optical disk drive and connected to the Internet. The individual patient can choose to update his/her personal data on the portable optical disk and can receive a new portable optical disk that includes the update.

Abstract: A memory system, memory interface device and method for a non-power-of-two burst length are provided. The memory system includes a plurality of memory devices with non-power-of-two burst length logic and a memory interface device including non-power-of-two burst length generation logic. The non-power-of-two burst length generation logic extends a burst length from a power-of-two value to insert an error-detecting code in a burst on data lines between the memory interface device and the plurality of memory devices.

Abstract: The present invention provides systems and methods to realize the potential benefit of portable storage devices by taking advantage of standard PCs including an optical disk drive capable of reading an optical disk, such as a CD or a DVD, cost effective optical disks, and the Internet. In a preferred embodiment, an individual patient provides personal data to a healthcare service center. The healthcare service center then creates a portable optical disk for the patient to carry, if he/she so desires. The personal data that is written onto the portable optical disk is stored on a database management server database and is readable and updateable by the individual patient using his/her PC with an optical disk drive and connected to the Internet. The individual patient can choose to update his/her personal data on the portable optical disk and can receive a new portable optical disk that includes the update.

Abstract: A memory device including a memory array storing data, a variable delay controller, a passive variable delay circuit and an output driver. The variable delay controller periodically receives delay commands from a first source external to the memory device during operation of the memory device, and outputs delay instruction bits responsive to the received delay commands. The passive variable delay circuit receives a clock from a second source external to the memory device, receives the delay instruction bits from the variable delay controller, generates a delayed clock having a time relation to the received clock as determined by the delay instruction bits, and outputting the delayed clock. The output driver receives the data from the memory array and the delayed clock, and outputs the data at a time responsive to the delayed clock.

Abstract: An electronic system having a power efficient differential signal between a first and second electronic unit. A controller uses information, such as compliance with data transmission rate requirement and bit error rate (BER) versus a BER threshold to control power modes such that a minimal amount of power is required. Amplitude of transmission and single ended or differential transmission of data are examples of the power modes. The controller also factors in a failing phase in a differential signal in selecting a minimal power mode that satisfies the transmission rate requirement of the BER threshold.

Abstract: A method and circuit for implementing enhanced memory reliability using memory scrub operations to determine a frequency of intermittent correctable errors, and a design structure on which the subject circuit resides are provided. A memory scrub for intermittent performs at least two reads before moving to a next memory scrub address. A number of intermittent errors is tracked where an intermittent error is identified, responsive to identifying one failing read and one passing read of the at least two reads.