Patents by Inventor Kenneth S. Collins

Kenneth S. Collins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of plasma load impedance tuning by modulation of an unmatched low power RF generator
    Patent number: 7967944
    Abstract: A workpiece is processed in a plasma reactor chamber using stabilization RF power delivered into the chamber, by determining changes in load impedance from RF parameters sensed at an RF source or bias power generator and resolving the changes in load impedance into first and second components thereof, and changing the power level of the stabilization RF power as a function one of the components of changes in load impedance.
    Type: Grant
    Filed: May 29, 2008
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Kartik Ramaswamy, Daniel J. Hoffman, Matthew L. Miller, Kenneth S. Collins
  • Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
    Patent number: 7968469
    Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
  • Process for wafer backside polymer removal and wafer front side photoresist removal
    Patent number: 7967996
    Abstract: A process is provided for removing polymer from a backside of a workpiece and/or photoresist from a front side of the workpiece. For backside polymer removal, the wafer is positioned near the ceiling to above a localized or remote plasma source having a side outlet through the sidewall of the chamber, and backside polymer is removed by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer backside. For front side photoresist removal, the wafer is positioned away from the ceiling and below the side outlet of the localized plasma source, and front side photoresist is remove by rotating the workpiece while flowing plasma by-products from the side outlet to the wafer front side.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: June 28, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Andrew Nguyen, Shahid Rauf, Ajit Balakrishna, Valentin N. Todorow, Kartik Ramaswamy, Martin Jeffrey Salinas, Imad Yousif, Walter R. Merry, Ying Rui, Michael R. Rice
  • APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR
    Publication number: 20110151590
    Abstract: A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.
    Type: Application
    Filed: July 29, 2010
    Publication date: June 23, 2011
    Applicant: Applied Materials, Inc.
    Inventors: James D. Carducci, Srinivas D. Nemani, Hairong Tang, Hui Sun, Igor Markovsky, Ezra R. Gold, Iwalani S. Kaya, Ellie Y. Yieh, Chunlei Zhang, Kenneth S. Collins, Michael D. Armacost, Ajit Balakrishna, Thorsten B. Lill
  • RF FEED STRUCTURE FOR PLASMA PROCESSING
    Publication number: 20110094683
    Abstract: Apparatus for plasma processing are provided. In some embodiments, an RF feed structure includes a first RF feed to couple RF power to a plurality of symmetrically arranged stacked first RF coil elements; a second RF feed coaxially disposed about the first RF feed and electrically insulated therefrom, the second RF feed to couple RF power to a plurality of symmetrically arranged stacked second RF coil elements coaxially disposed with respect to the first RF coil elements. In some embodiments, a plasma processing apparatus includes a first RF coil; a second RF coil coaxially disposed with respect to the first RF coil; a first RF feed coupled to the first RF coil to provide RF power thereto; and a second RF feed coaxially disposed with respect to the first RF feed and electrically insulated therefrom, the second RF feed coupled to the second RF coil to provide RF power thereto.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 28, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: ZHIGANG CHEN, SHAHID RAUF, KENNETH S. COLLINS, MARTIN JEFF SALINAS, SAMER BANNA, VALENTIN N. TODOROW
  • DUAL MODE INDUCTIVELY COUPLED PLASMA REACTOR WITH ADJUSTABLE PHASE COIL ASSEMBLY
    Publication number: 20110097901
    Abstract: Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.
    Type: Application
    Filed: June 23, 2010
    Publication date: April 28, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: SAMER BANNA, VALENTIN N. TODOROW, KENNETH S. COLLINS, ANDREW NGUYEN, MARTIN JEFF SALINAS, ZHIGANG CHEN, ANKUR AGARWAL, ANNIRUDDHA PAL, TSE-CHIANG WANG, SHAHID RAUF
  • PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE
    Publication number: 20110048644
    Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
    Type: Application
    Filed: May 25, 2010
    Publication date: March 3, 2011
    Applicant: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Andrew Nguyen, Martin Jeffrey Salinas, Imad Yousif, Ming Xu
  • Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources
    Patent number: 7884025
    Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: February 8, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
  • APPARATUS FOR VHF IMPEDANCE MATCH TUNING
    Publication number: 20110023780
    Abstract: Embodiments of impedance matching networks are provided herein. In some embodiments, an impedance matching network may include a coaxial resonator having an inner and an outer conductor. A tuning capacitor may be provided for variably controlling a resonance frequency of the coaxial resonator. The tuning capacitor may be formed by a first tuning electrode and a second tuning electrode and an intervening dielectric, wherein the first tuning electrode is formed by a portion of the inner conductor. A load capacitor may be provided for variably coupling energy from the inner conductor to a load. The load capacitor may be formed by the inner conductor, an adjustable load electrode, and an intervening dielectric.
    Type: Application
    Filed: July 29, 2009
    Publication date: February 3, 2011
    Applicant: APPLIED MATERIALS, INC.
    Inventors: KARTIK RAMASWAMY, HIROJI HANAWA, KENNETH S. COLLINS, LAWRENCE WONG, SAMER BANNA, ANDREW NGUYEN
  • Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources
    Patent number: 7879731
    Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
    Type: Grant
    Filed: April 11, 2007
    Date of Patent: February 1, 2011
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Douglas A. Buchberger, Jr., Shahid Rauf, Kallol Bera, Lawrence Wong, Walter R. Merry, Matthew L. Miller, Steven C. Shannon, Andrew Nguyen, James P. Cruse, James Carducci, Troy S. Detrick, Subhash Deshmukh, Jennifer Y. Sun
  • PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS
    Publication number: 20100248488
    Abstract: Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
    Type: Application
    Filed: February 23, 2010
    Publication date: September 30, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Ankur Agarwal, Kenneth S. Collins, Shahid Rauf, Kartik Ramaswamy, Thorsten B. Lill
  • RETRACTING TETHER FOR CELL PHONES, PAGERS, & PDAS
    Publication number: 20100206976
    Abstract: A retractable tether is disclosed which may be used in conjunction with personal communication devices (such as a Cell Phone, Pager or PDA) mounting system for the prevention of loss or damage. The retracting tether may be clipped to a belt, pants or purse next to the location in which the device is being held or stored. The retractable tether allows the device to be easily used while connected to the retracting tether. Should the device be dropped or dislodged from it's clip mount, holster or storage pocket, the retracting tether prevents the device from hitting the ground thereby preventing loss or damage to the device. A separation mechanism is also incorporated to allow the device to be easily removed from the retractable tether.
    Type: Application
    Filed: February 17, 2010
    Publication date: August 19, 2010
    Inventors: John A. Salentine, Kenneth S. Collin, JR.
  • Methods and apparatus for controlling characteristics of a plasma
    Patent number: 7777599
    Abstract: Methods and apparatus for controlling characteristics of a plasma, such as the spatial distribution of RF power and plasma uniformity, are provided herein. In some embodiments, an apparatus for controlling characteristics of a plasma includes a resonator for use in conjunction with a plasma reactor, the resonator including a source resonator for receiving an RF signal having a first frequency; a return path resonator disposed substantially coaxially with, and at least partially within, the source resonator; and an outer conductor having the source resonator and the return path resonator disposed substantially coaxially with, and at least partially within, the outer conductor, the outer conductor for providing an RF ground connection.
    Type: Grant
    Filed: November 2, 2007
    Date of Patent: August 17, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Steven C. Shannon, Daniel J. Hoffman, Matthew L. Miller, Olga Regelman, Kenneth S. Collins, Kartik Ramaswamy, Kallol Bera
  • Plasma immersion ion implantation reactor having an ion shower grid
    Patent number: 7767561
    Abstract: A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
    Type: Grant
    Filed: July 20, 2004
    Date of Patent: August 3, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Hiroji Hanawa, Tsutomu Tanaka, Kenneth S. Collins, Amir Al-Bayati, Kartik Ramaswamy, Andrew Nguyen
  • Semiconductor processing apparatus comprising a solid solution ceramic of yttrium oxide and zirconium oxide
    Publication number: 20100160143
    Abstract: A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
    Type: Application
    Filed: February 19, 2010
    Publication date: June 24, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins
  • EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER
    Publication number: 20100136793
    Abstract: In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
    Type: Application
    Filed: November 20, 2009
    Publication date: June 3, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Zhigang Chen, Shahid Rauf, Walter R. Merry, Leonid Dorf, Kartik Ramaswamy, Kenneth S. Collins
  • Protective coatings resistant to reactive plasma processing
    Publication number: 20100129670
    Abstract: Embodiments of the invention relate to compositions of metal oxyfluoride-comprising glazes or metal fluoride-comprising glazes, glass ceramics, and combinations thereof which are useful as plasma-resistant solid substrates or plasma resistant protective coatings over other substrates. Also described are methods of fabricating various structures which incorporate such compositions, including solid substrates and coatings over the surface of a substrate which has a melting point which is higher than about 1600° C., such as aluminum oxide, aluminum nitride, quartz, silicon carbide, silicon nitride.
    Type: Application
    Filed: November 3, 2009
    Publication date: May 27, 2010
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Kenneth S. Collins
  • Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
    Publication number: 20100119844
    Abstract: Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties.
    Type: Application
    Filed: November 12, 2008
    Publication date: May 13, 2010
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Kenneth S. Collins
  • Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage
    Patent number: 7700465
    Abstract: A method for ion implanting a species into a surface layer of a workpiece in a chamber includes placing the workpiece in a processing zone of the chamber bounded by a chamber side wall and a chamber ceiling facing said workpiece and between a pair of ports of the chamber near generally opposite sides to the processing zone and connected together by a conduit external of the chamber. The method further includes introducing into the chamber a process gas comprising the species to be implanted, and further generating from the process gas a plasma current and causing the plasma current to oscillate in a circulatory reentrant path comprising the conduit and the processing zone.
    Type: Grant
    Filed: August 22, 2003
    Date of Patent: April 20, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Hiroji Hanawa, Kartik Ramaswamy, Andrew Nguyen, Amir Al-Bayati, Biagio Gallo, Gonzalo Antonio Monroy
  • Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
    Patent number: 7696117
    Abstract: A ceramic article which is resistant to erosion by halogen-containing plasmas used in semiconductor processing. The ceramic article includes ceramic which is multi-phased, typically including two phase to three phases. The ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mole % to about 75 mole %; zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mole % to about 30 mole %.
    Type: Grant
    Filed: April 27, 2007
    Date of Patent: April 13, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins