Abstract: A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes form at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Methods and apparatus for generating a variable clock used to control a component of a substrate processing system are provided herein. In some embodiments, an apparatus for controlling a substrate processing system includes: a phase locked loop circuit for generating a relative clock that is phase locked to a variable frequency signal being used by a substrate processing chamber; and a controller, coupled to the phase locked loop circuit, for producing a control signal for a component of the substrate processing system, wherein the control signal is based upon the relative clock and an operating indicia of the substrate processing system.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with RF feeds arranged in equilateral symmetry.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: A bonded ceramic component which is resistant to reactive halogen-containing plasmas, said component comprising ceramic portions which are bonded together by a bonding material which includes an oxyfluoride glass-ceramic-comprising transition area between interfaces of the ceramic portions, where the transition area includes from at least 0.1 volume % amorphous phase up to about 50 volume % amorphous phase.

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.

Abstract: A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

Abstract: A plasma reactor enclosure has a metallic portion and a dielectric portion of plural dielectric windows supported on the metallic portion, each of the dielectric windows extending around an axis of symmetry. Plural concentric coil antennas are disposed on an external side of the enclosure, respective ones of the coil antennas facing respective ones of the dielectric windows.

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: The disclosure concerns a method of operating a plasma reactor having an electron beam plasma source for independently adjusting electron beam energy, plasma ion energy and radical population. The disclosure further concerns an electron beam source for a plasma reactor having an RF-driven electrode for producing the electron beam.

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.