Patents by Inventor Kensuke Goto

Kensuke Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10836354
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may be integrated within an interior surface of a laminated glass structure comprising an adhesive interlayer disposed between two glass layers. The capacitive sensor electrodes may be arranged in a variety of configurations between the two glass layers. The capacitive sensor may be used with a printed circuit board that is configured to electrically couple to the capacitive sensor electrodes.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: November 17, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Patent number: 10824264
    Abstract: Various embodiments of the present technology may provide methods and system for a capacitive touch sensor. The system is configured to measure a capacitance of a capacitive sensor element and generate a corresponding voltage using a sensing circuit. The sensing circuit may include an amplifier configured to generate a plurality of amplified voltages by applying a set of gain values to the voltage. The sensing circuit may further analyze a set of values according to the plurality of the amplified voltages.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: November 3, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tetsuya Tokunaga, Kensuke Goto, Hiroshi Yoshino, Yasunori Yamamoto, Takayasu Otagaki
  • Patent number: 10816497
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may provide a reception electrode in communication with a drive electrode to form an electric field and a ground electrode surrounding the reception and drive electrodes. The ground electrode may couple the rain to a ground potential resulting in a decrease in the capacitance of the capacitive sensor.
    Type: Grant
    Filed: January 24, 2019
    Date of Patent: October 27, 2020
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Publication number: 20200241726
    Abstract: Various embodiments of the present technology may provide methods and system for a touch sensor. The system may provide a sensing circuit connected to a touch sensor comprising a plurality of capacitive sense elements. The sensing circuit detects changes in the touch sensor and interprets whether the change represents a touch event or a non-touch event.
    Type: Application
    Filed: November 8, 2019
    Publication date: July 30, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tetsuya TOKUNAGA, Kensuke GOTO, Hiroshi YOSHINO, Yasunori YAMAMOTO, Takayasu OTAGAKI
  • Publication number: 20200241682
    Abstract: Various embodiments of the present technology may provide methods and system for a capacitive touch sensor. The system is configured to measure a capacitance of a capacitive sensor element and generate a corresponding voltage using a sensing circuit. The sensing circuit may include an amplifier configured to generate a plurality of amplified voltages by applying a set of gain values to the voltage. The sensing circuit may further analyze a set of values according to the plurality of the amplified voltages.
    Type: Application
    Filed: January 24, 2019
    Publication date: July 30, 2020
    Applicant: Semiconductor Components Industries, LLC
    Inventors: Tetsuya TOKUNAGA, Kensuke Goto, Hiroshi Yoshino, Yasunori Yamamoto, Takayasu Otagaki
  • Publication number: 20200238954
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may be integrated within an interior surface of a laminated glass structure comprising an adhesive interlayer disposed between two glass layers. The capacitive sensor electrodes may be arranged in a variety of configurations between the two glass layers. The capacitive sensor may be used with a printed circuit board that is configured to electrically couple to the capacitive sensor electrodes.
    Type: Application
    Filed: May 16, 2019
    Publication date: July 30, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Publication number: 20200240944
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may provide a reception electrode in communication with a drive electrode to form an electric field and a ground electrode surrounding the reception and drive electrodes. The ground electrode may couple the rain to a ground potential resulting in a decrease in the capacitance of the capacitive sensor.
    Type: Application
    Filed: January 24, 2019
    Publication date: July 30, 2020
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Patent number: 10698540
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a touch sensor. The capacitive touch sensor may comprise a plurality of drive electrodes and a reception electrode, wherein two capacitors are formed. Under various conditions, the capacitive touch sensor may be configured to trigger a touch event in the presence of a human finger and trigger a non-touch event in the presence of water.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: June 30, 2020
    Assignee: SEMICONDUTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tetsuya Tokunaga, Takayasu Otagaki, Kensuke Goto
  • Patent number: 10509523
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may include a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: December 17, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Patent number: 10430008
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises two sensing planes in communication with each other. Each sensing plane may comprise a multi-operation electrode, where the multi-operation electrode is configured to operate as a transmission electrode and a reception electrode.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: October 1, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Publication number: 20190227648
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a touch sensor. The capacitive touch sensor may comprise a plurality of drive electrodes and a reception electrode, wherein two capacitors are formed. Under various conditions, the capacitive touch sensor may be configured to trigger a touch event in the presence of a human finger and trigger a non-touch event in the presence of water.
    Type: Application
    Filed: January 22, 2018
    Publication date: July 25, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Tetsuya TOKUNAGA, Takayasu OTAGAKI, Kensuke GOTO
  • Publication number: 20190196624
    Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may include a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.
    Type: Application
    Filed: March 4, 2019
    Publication date: June 27, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Patent number: 10310694
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: June 4, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Patent number: 10268328
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may comprise a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: April 23, 2019
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Publication number: 20190018513
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may comprise a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.
    Type: Application
    Filed: July 12, 2017
    Publication date: January 17, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Publication number: 20190012019
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises two sensing planes in communication with each other. Each sensing plane may comprise a multi-operation electrode, where the multi-operation electrode is configured to operate as a transmission electrode and a reception electrode.
    Type: Application
    Filed: September 12, 2018
    Publication date: January 10, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Publication number: 20190004631
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.
    Type: Application
    Filed: August 13, 2018
    Publication date: January 3, 2019
    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu OTAGAKI, Kensuke GOTO
  • Patent number: 10114515
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises at least two parallel sensing planes. Each sensing plane may comprise two electrodes, where one electrode of each sensing plane be configured to operate as a transmission electrode and a reception electrode.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 30, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Patent number: 10088963
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise a sensing element with a plurality of multi-operation electrodes configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field. Each of the multi-operation electrodes may be selectively operated by a detection circuit to couple one multi-operation electrode to an amplifier and each remaining multi-operation electrode to a voltage source.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: October 2, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto
  • Patent number: 10073574
    Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: September 11, 2018
    Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
    Inventors: Takayasu Otagaki, Kensuke Goto