Patents by Inventor Kensuke Goto
Kensuke Goto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10836354Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may be integrated within an interior surface of a laminated glass structure comprising an adhesive interlayer disposed between two glass layers. The capacitive sensor electrodes may be arranged in a variety of configurations between the two glass layers. The capacitive sensor may be used with a printed circuit board that is configured to electrically couple to the capacitive sensor electrodes.Type: GrantFiled: May 16, 2019Date of Patent: November 17, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Patent number: 10824264Abstract: Various embodiments of the present technology may provide methods and system for a capacitive touch sensor. The system is configured to measure a capacitance of a capacitive sensor element and generate a corresponding voltage using a sensing circuit. The sensing circuit may include an amplifier configured to generate a plurality of amplified voltages by applying a set of gain values to the voltage. The sensing circuit may further analyze a set of values according to the plurality of the amplified voltages.Type: GrantFiled: January 24, 2019Date of Patent: November 3, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Tetsuya Tokunaga, Kensuke Goto, Hiroshi Yoshino, Yasunori Yamamoto, Takayasu Otagaki
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Patent number: 10816497Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may provide a reception electrode in communication with a drive electrode to form an electric field and a ground electrode surrounding the reception and drive electrodes. The ground electrode may couple the rain to a ground potential resulting in a decrease in the capacitance of the capacitive sensor.Type: GrantFiled: January 24, 2019Date of Patent: October 27, 2020Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Publication number: 20200238954Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may be integrated within an interior surface of a laminated glass structure comprising an adhesive interlayer disposed between two glass layers. The capacitive sensor electrodes may be arranged in a variety of configurations between the two glass layers. The capacitive sensor may be used with a printed circuit board that is configured to electrically couple to the capacitive sensor electrodes.Type: ApplicationFiled: May 16, 2019Publication date: July 30, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Publication number: 20200241682Abstract: Various embodiments of the present technology may provide methods and system for a capacitive touch sensor. The system is configured to measure a capacitance of a capacitive sensor element and generate a corresponding voltage using a sensing circuit. The sensing circuit may include an amplifier configured to generate a plurality of amplified voltages by applying a set of gain values to the voltage. The sensing circuit may further analyze a set of values according to the plurality of the amplified voltages.Type: ApplicationFiled: January 24, 2019Publication date: July 30, 2020Applicant: Semiconductor Components Industries, LLCInventors: Tetsuya TOKUNAGA, Kensuke Goto, Hiroshi Yoshino, Yasunori Yamamoto, Takayasu Otagaki
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Publication number: 20200241726Abstract: Various embodiments of the present technology may provide methods and system for a touch sensor. The system may provide a sensing circuit connected to a touch sensor comprising a plurality of capacitive sense elements. The sensing circuit detects changes in the touch sensor and interprets whether the change represents a touch event or a non-touch event.Type: ApplicationFiled: November 8, 2019Publication date: July 30, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Tetsuya TOKUNAGA, Kensuke GOTO, Hiroshi YOSHINO, Yasunori YAMAMOTO, Takayasu OTAGAKI
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Publication number: 20200240944Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive sensor configured to detect rain. The capacitive sensor may provide a reception electrode in communication with a drive electrode to form an electric field and a ground electrode surrounding the reception and drive electrodes. The ground electrode may couple the rain to a ground potential resulting in a decrease in the capacitance of the capacitive sensor.Type: ApplicationFiled: January 24, 2019Publication date: July 30, 2020Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Patent number: 10698540Abstract: Various embodiments of the present technology may comprise methods and apparatus for a touch sensor. The capacitive touch sensor may comprise a plurality of drive electrodes and a reception electrode, wherein two capacitors are formed. Under various conditions, the capacitive touch sensor may be configured to trigger a touch event in the presence of a human finger and trigger a non-touch event in the presence of water.Type: GrantFiled: January 22, 2018Date of Patent: June 30, 2020Assignee: SEMICONDUTOR COMPONENTS INDUSTRIES, LLCInventors: Tetsuya Tokunaga, Takayasu Otagaki, Kensuke Goto
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Patent number: 10509523Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may include a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.Type: GrantFiled: March 4, 2019Date of Patent: December 17, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Patent number: 10430008Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises two sensing planes in communication with each other. Each sensing plane may comprise a multi-operation electrode, where the multi-operation electrode is configured to operate as a transmission electrode and a reception electrode.Type: GrantFiled: September 12, 2018Date of Patent: October 1, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Publication number: 20190227648Abstract: Various embodiments of the present technology may comprise methods and apparatus for a touch sensor. The capacitive touch sensor may comprise a plurality of drive electrodes and a reception electrode, wherein two capacitors are formed. Under various conditions, the capacitive touch sensor may be configured to trigger a touch event in the presence of a human finger and trigger a non-touch event in the presence of water.Type: ApplicationFiled: January 22, 2018Publication date: July 25, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Tetsuya TOKUNAGA, Takayasu OTAGAKI, Kensuke GOTO
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Publication number: 20190196624Abstract: Various embodiments of the present technology may provide methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may include a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.Type: ApplicationFiled: March 4, 2019Publication date: June 27, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Patent number: 10310694Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.Type: GrantFiled: August 13, 2018Date of Patent: June 4, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Patent number: 10268328Abstract: Various embodiments of the present technology may comprise methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may comprise a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.Type: GrantFiled: July 12, 2017Date of Patent: April 23, 2019Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Publication number: 20190018513Abstract: Various embodiments of the present technology may comprise methods and apparatus for a capacitive pressure sensor configured to detect firm pressure to a sensing surface. The capacitive pressure sensor may comprise a first substrate and a second substrate, wherein at least one of the first and second substrate is configured to deform when firm pressure is applied. The deformation of the sensor may either create a gap between the substrates or eliminate a gap between the substrates. The deformation may be interpreted as firm pressure to the sensing surface.Type: ApplicationFiled: July 12, 2017Publication date: January 17, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Publication number: 20190012019Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises two sensing planes in communication with each other. Each sensing plane may comprise a multi-operation electrode, where the multi-operation electrode is configured to operate as a transmission electrode and a reception electrode.Type: ApplicationFiled: September 12, 2018Publication date: January 10, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Publication number: 20190004631Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.Type: ApplicationFiled: August 13, 2018Publication date: January 3, 2019Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu OTAGAKI, Kensuke GOTO
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Patent number: 10114515Abstract: Various embodiments of the present technology may comprise methods and apparatus for a 3-dimensional capacitive sensor. The method and apparatus may comprise a sensing element formed along multiple planes to create a sensing field. The capacitive sensor comprises at least two parallel sensing planes. Each sensing plane may comprise two electrodes, where one electrode of each sensing plane be configured to operate as a transmission electrode and a reception electrode.Type: GrantFiled: October 3, 2016Date of Patent: October 30, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Patent number: 10088963Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise a sensing element with a plurality of multi-operation electrodes configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field. Each of the multi-operation electrodes may be selectively operated by a detection circuit to couple one multi-operation electrode to an amplifier and each remaining multi-operation electrode to a voltage source.Type: GrantFiled: October 3, 2016Date of Patent: October 2, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto
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Patent number: 10073574Abstract: Various embodiments of the present technology may comprise methods and apparatus for increased sensitivity of a capacitive proximity sensor. The method and apparatus may comprise additional external capacitors coupled in parallel with internal variable capacitors to increase the effective capacitance of a detection circuit allowing for a larger sensing element, and therefore a stronger sensing field, without increasing the applied voltage or the internal capacitance of the proximity sensor. In alternative embodiments, the methods and apparatus may be configured to operate as one of a transmission electrode and a reception electrode to increase the strength of the sensing field.Type: GrantFiled: October 3, 2016Date of Patent: September 11, 2018Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Takayasu Otagaki, Kensuke Goto