Abstract: A semiconductor memory device includes a differential waveform shaping circuit including first and waveform shaping circuits connected in parallel. The first waveform shaping circuit has a first inverting amplifier, and two inverters connected in series. The first inverting amplifier inverts and differentially amplifies an input signal having a rectangular waveform. Then, the output of the first inverting amplifier is passed through the two inverters. The second waveform shaping circuit has a first inverter, a second inverting amplifier, and a second inverter connected in series. The second inverting amplifier inverts and differentially amplifies the output signal from the first invertor, and the second inverter inverts the output signal from the second inverting amplifier. The differential waveform shaping circuit generates an output signal by averaging the output signal from the first waveform shaping circuit and the output signal from the second waveform shaping circuit.

Abstract: An aluminum alloy has high thermal conductivity without requiring an addition of metal elements such as iron and a method for producing the aluminum alloy. The aluminum alloy is obtained from a semi-solid material with a chemical composition containing 2 to 6 wt % of silicon (Si) and 0.7 wt % or less of magnesium (Mg), with the balance being aluminum (Al) and unavoidable impurities. It has a granular crystalline structure. The aluminum alloy is produced by a heating step of semi-solid material. A forming step is performed with semi-solid material obtained in the heating step S1. After the forming step, a heat treatment step is performed at 190° C. to 290° C. for 1 to 5 hours.

Abstract: According to one embodiment, a nonvolatile memory includes a memory cell array including a first storage region and a second storage region, an input/output circuit configured to communicate with a memory controller, and a control circuit. The control circuit is configured to, upon receiving a first command from the memory controller, execute a first training operation related to the input/output circuit, and upon receiving a second command from the memory controller, store a first result of the first training operation in the first storage region.

Abstract: The negative electrode for an electric device includes a current collector and an electrode layer containing a negative electrode active material, a conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by the following formula (1): SixSnyMzAa (in the formula (1), M is at least one metal selected from the group consisting of Al, V, C and a combination thereof, A is inevitable impurities, and x, y, z and a represent mass percent values and satisfy the conditions of 0<x<100, 0<y<100, 0<z<100, 0?a<0.5, and x+y+z+a=100), and elastic elongation of the current collector is 1.30% or greater.

Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first circuit having a first output terminal. The second chip includes a second circuit having a second output terminal, which is electrically connected to the first output terminal via a first signal line. When the first chip and the second chip receive a first command, the second circuit calibrates an output impedance at the second output terminal through a first calibration operation based on an output impedance at the first output terminal.

Abstract: A valve control device controls a valve drive mechanism on the basis of a degree-of-opening signal for a valve and a startup signal for an engine, and includes: a drive signal generating unit that, when it is determined on the basis of the startup signal that the engine is stated, generates a test drive signal for test-driving the valve before the generation of a normal drive signal associated with normal driving of the valve; and an abnormality determining unit that, on the basis of the degree-of-opening signal during the test driving, determines whether or not an abnormality has occurred in the drive mechanism. The drive signal generating unit stops generating the test drive signal and the normal drive signal when the abnormality determining unit determines that the abnormality has occurred in the drive mechanism.

Abstract: A valve control device performs feedback control of a drive mechanism for a wastegate valve provided for a supercharger of an engine on the basis of a sensor signal indicating a real degree of opening of the wastegate valve and a target degree of opening of the wastegate valve, and includes a gain setting unit configured to set different control gains when the wastegate valve is closed and when the wastegate valve is opened.

Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first circuit having a first output terminal. The second chip includes a second circuit having a second output terminal, which is electrically connected to the first output terminal via a first signal line. When the first chip and the second chip receive a first command, the second circuit calibrates an output impedance at the second output terminal through a first calibration operation based on an output impedance at the first output terminal.

Abstract: A non-aqueous electrolyte secondary battery includes: a negative electrode active material represented by the Formula (1)=? (Si material)+? (carbon material), wherein the Si material is one or more kinds selected from the group consisting of SiOx that is a mixture of amorphous SiO2 particles and Si particles and a Si-containing alloy; ? and ? represent % by mass of each component in the layer; and 80??+??98, 0.1???40, and 58???97.9 are satisfied, and a difference between the maximum value and the minimum value of an area proportion (%) of a binder in an area of the field of view of each image of cross-sections of the layer in a case where a plurality of arbitrary places is selected in a plane of the negative electrode active material layer is within 10%.

Abstract: A semiconductor storage device includes a first chip and a second chip each including a memory cell and configured to receive a same toggle signal. Upon receiving a first command, the first chip executes a first calibration operation to calibrate a duty ratio of an output signal generated in response to the toggle signal while data is read out from the second chip in response to the toggle signal.

Abstract: A valve control device controls an actuator for operating a valve based on a signal indicating a degree of opening of the valve and a signal indicating starting of an engine for which the valve. The valve control device includes a fully closed learning processing unit configured to learn a seated position at which a valve body is seated on a valve seat whenever the engine is started on the basis of the startup signal and the degree-of-opening signal, and a target value setting unit configured to set a soft-landing initiation position when the valve body is seated based on the seated position and set a target value with the valve body is decelerated from the soft-landing initiation position, and the valve body is seated at a predetermined seating speed. A control driving unit is configured to generate a drive signal based on the target value and the degree-of-opening signal.

Abstract: A non-aqueous electrolyte secondary battery includes a negative electrode active material represented by: ?(Si material)+?(carbon material), the Si material is one or more kinds selected from the group consisting of SiOx that is a mixture of amorphous SiO2 particles and Si particles and a Si-containing alloy; ? and ? represent % by mass; and 80??+??98, 0.1???40, and 58???97.9 are satisfied), and when area proportions (%) of the Si material and the carbon material in an area of a field of view of each image of cross-sections of the layer in a case where a plurality of arbitrary places is selected in a plane of the layer are designated as S (%) and (100?S) (%), respectively, a difference between a maximum value and a minimum value of S is within 5%.

Abstract: A negative electrode for an electrical device includes: a current collector; and an electrode layer containing a negative electrode active material, an electrically-conductive auxiliary agent and a binder and formed on a surface of the current collector, wherein the negative electrode active material contains an alloy represented by a following formula (1): SixZnyMzAa (in the formula (1) M is at least one metal selected from the group consisting of V, Sn, Al, C and combinations thereof, A is inevitable impurity, and x, y, z and a represent mass percent values and satisfy 0<x<100, 0<y<100, 0<z<100, 0?a<0.5 and x+y+z+a=100), and elongation (?) of the electrode layer is 1.29<?<1.70%.

Abstract: A non-aqueous electrolyte secondary battery includes: a negative electrode active material represented by the Formula (1)=? (Si material)+? (carbon material), wherein the Si material is one or more kinds selected from the group consisting of SiOx that is a mixture of amorphous SiO2 particles and Si particles and a Si-containing alloy; ? and ? represent % by mass of each component in the layer; and 80??+??98, 0.1???40, and 58???97.9 are satisfied, and a difference between the maximum value and the minimum value of an area proportion (%) of a binder in an area of the field of view of each image of cross-sections of the layer in a case where a plurality of arbitrary places is selected in a plane of the negative electrode active material layer is within 10%.

Abstract: A valve control device includes a drive circuit for supplying a drive signal to an actuator adjusting an opening degree of a valve via a prescribed transmission line, generates a PWM signal on the basis of a target opening degree supplied from the outside and a sensor signal that indicates a real opening degree of the valve, and supplies the PWM signal to the drive circuit. The valve control device includes a disconnection detection unit which detects, on the basis of the PWM signal and a monitor signal of the drive signal, whether the transmission line is disconnected.

Abstract: A valve control device controls an actuator for operating a valve based on a signal indicating a degree of opening of the valve and a signal indicating starting of an engine for which the valve. The valve control device includes a fully closed learning processing unit configured to learn a seated position at which a valve body is seated on a valve seat whenever the engine is started on the basis of the startup signal and the degree-of-opening signal, and a target value setting unit configured to set a soft-landing initiation position when the valve body is seated based on the seated position and set a target value with the valve body is decelerated from the soft-landing initiation position, and the valve body is seated at a predetermined seating speed. A control driving unit is configured to generate a drive signal based on the target value and the degree-of-opening signal.

Abstract: A valve control device controls a valve drive mechanism on the basis of a degree-of-opening signal for a valve and a startup signal for an engine, and includes: a drive signal generating unit that, when it is determined on the basis of the startup signal that the engine is stated, generates a test drive signal for test-driving the valve before the generation of a normal drive signal associated with normal driving of the valve; and an abnormality determining unit that, on the basis of the degree-of-opening signal during the test driving, determines whether or not an abnormality has occurred in the drive mechanism. The drive signal generating unit stops generating the test drive signal and the normal drive signal when the abnormality determining unit determines that the abnormality has occurred in the drive mechanism.

Abstract: A valve control device includes a drive circuit for supplying a drive signal to an actuator adjusting an opening degree of a valve via a prescribed transmission line, generates a PWM signal on the basis of a target opening degree supplied from the outside and a sensor signal that indicates a real opening degree of the valve, and supplies the PWM signal to the drive circuit. The valve control device includes a disconnection detection unit which detects, on the basis of the PWM signal and a monitor signal of the drive signal, whether the transmission line is disconnected.

Abstract: A semiconductor device includes a first chip and a second chip. The first chip includes a first circuit having a first output terminal. The second chip includes a second circuit having a second output terminal, which is electrically connected to the first output terminal via a first signal line. When the first chip and the second chip receive a first command, the second circuit calibrates an output impedance at the second output terminal through a first calibration operation based on an output impedance at the first output terminal.

Abstract: A valve control device performs feedback control of a drive mechanism for a wastegate valve provided for a supercharger of an engine on the basis of a sensor signal indicating a real degree of opening of the wastegate valve and a target degree of opening of the wastegate valve, and includes a gain setting unit configured to set different control gains when the wastegate valve is closed and when the wastegate valve is opened.