Abstract: A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer 12 constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring 21 formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector 14 which overlies the electrode layer and is in contact with at least the wiring.

Abstract: To provide a high-temperature steam electrolytic apparatus and method that steam can be used as a common gas between a hydrogen electrode and an oxygen electrode, and the steam can be electrolyzed efficiently while the electrodes of the electrochemical cell are suppressed from oxidative and reductive degradation. A steam electrolytic apparatus 10, comprising an electrochemical cell composed of an electrolyte containing a solid oxide mainly, a hydrogen electrode and an oxygen electrode; a steam supply portion 13 for supplying the electrochemical cell 11 with a gas containing steam as a main component; a hydrogen gas discharge portion 14 for discharging hydrogen generated by the hydrogen electrode by electrolysis of the steam; and an oxygen gas discharge portion 15 for discharging oxygen generated by the oxygen electrode by electrolysis of the steam, wherein the oxygen electrode contains a reduction-resistant material.

Abstract: There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

Abstract: According to an aspect of the invention, there is provided a substrate cleaning method of discharging cleaning liquid from a nozzle above a processing target substrate to clean the substrate while rotating the substrate such that the nozzle is scanned from the center of the substrate toward an outside of the substrate while discharging the cleaning liquid from the nozzle toward the substrate to scatter the cleaning liquid toward the outside of the substrate, comprising controlling a flow rate of the cleaning liquid, a rotational speed of the substrate, a scan speed of the nozzle, and a scan start position of the nozzle such that the cleaning liquid discharged from the nozzle does not impinge on the old cleaning liquid remaining on the substrate when the cleaning liquid discharged from the nozzle contacts a surface of the substrate.

Abstract: A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.

Abstract: A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.

Abstract: An alkaline solution ref lux path which refluxes an alkaline solution being discharged from an alkaline solution discharge port 101 of an absorber 100 to an alkaline solution introduction port 102 to absorb carbon dioxide and the like, and an alkaline solution reflux path which refluxes a regenerated alkaline solution being discharged from a regenerated alkaline solution discharge port 111 of a regenerator 110 to an alkaline solution jet port 112 and discharges the carbon dioxide to regenerate an alkaline solution are disposed separately and independently. Thus, the flow rates and the like of the alkaline solutions flowing through the individual alkaline solution reflux paths can be set individually.

Abstract: A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.

Abstract: A system and a method for recovery of carbon dioxide in exhaust gas, wherein a liquid absorbent (116) jetted from a liquid absorbent jetting part (101) comes into gas-liquid contact with exhaust gas (114) flowing through a packing (102) from the lower side to the upper side to absorb the carbon dioxide contained in the exhaust gas (114). The flow of the liquid absorbent (116) in a deposition vessel (11) conditioned to a specified pH value is stopped to deposit insoluble compounds as the reaction product of the liquid absorbent (116) against the carbon dioxide, and the carbon dioxide is collected as the insoluble compounds. Thus, the carbon dioxide can be removed from the liquid absorbent which absorbed the carbon dioxide without using steam from a power generating boiler.

Abstract: There is disclosed an immersion exposure method of carrying out an exposure process in a state that liquid is at least partly filled between a substrate to be exposed and a projection optical system of an exposure apparatus carrying out the exposure process, comprising carrying out a process of making large a contact angle to the liquid with at least outer peripheral portion of a main surface of the substrate compared with a contact angle to the liquid with an area adjacent to the outer peripheral portion of the substrate, which area is a part of a surface of a substrate supporting side of a substrate support member supporting the substrate included in the exposure apparatus, and carrying out the exposure process.

Abstract: An electrical double-layer capacitor has a construction wherein a pair of positive and negative polarizing electrodes whose chief constituent is active carbon laminated (or coiled) in a condition with a separator sandwiched therebetween and with their outsides held by respective aluminum collection electrodes are accommodated in a case made of metal etc. in a condition impregnated with electrolyte using propylene carbonate as solvent. The polarizing electrodes have a solid-state structure wherein the active carbon particles are the chief constituent (first substance) and these active carbon particles 3 are connected in network fashion by a second substance such as for example nano-size carbon black which is of higher electrical conductivity than the active carbon and of smaller size than the active carbon particles.

Abstract: An anti-reflection film has been formed on an SiO2 film on a silicon substrate formed on a silicon wafer. A chemical amplification positive resist is formed on the anti-reflection film. The resist is exposed to light. Vapor of strong alkali is applied to a surface of the chemical amplification positive resist. The entire resist is developed with a developing solution, thereby forming a resist pattern.

Abstract: A method of manufacturing a semiconductor device, which comprises the steps of, selectively silylating a photosensitive resin film by exposing the photosensitive resin film according to an exposure pattern thereby to form a silylated portion having a glass transition temperature which is lower than that of the photosensitive resin film and at the same time exposing the photosensitive resin film to an intermediate temperature between the glass transition temperature of the silylated portion and the glass transition temperature of the photosensitive resin film thereby fluidizing the silylated portion so as to cover a portion of the photosensitive resin film neighboring the silylated portion with the fluidized silylated portion, and developing the photosensitive resin film by making use of the silylated portion and the portion of photosensitive resin film covered by the fluidized silylated portion as a mask.