Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Abstract: Provided are a method of manufacturing a flexible device and a flexible device manufactured thereby. The method of manufacturing a flexible device according to the present disclosure includes: fabricating a device on an upper silicon layer of a silicon-on-insulator (SOI) substrate comprising a lower silicon layer, an insulation layer and the upper silicon layer stacked sequentially; adhering a second silicon substrate to the upper silicon layer; removing the lower silicon layer; transferring the upper silicon layer with the device fabricated to a flexible substrate using the second silicon substrate; and stacking a passivation layer on the flexible substrate, wherein the device is located at a position of a neutral mechanical plane of the entire device as the passivation layer is stacked.

Abstract: The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Abstract: Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.

Abstract: Disclosed are a method for fabricating a GaN LED array device for optogenetics and a GaN LED array device fabricated thereby.

Abstract: In an aspect, the present invention provides stretchable, and optionally printable, components such as semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed, and related methods of making or tuning such stretchable components. Stretchable semiconductors and electronic circuits preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention are adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.

Abstract: There are provided a flexible nanocomposite generator and a method of manufacturing the same. A flexible nanocomposite generator according to the present invention includes a piezoelectric layer formed of a flexible matrix containing piezoelectric nanoparticles and carbon nanostructures; and electrode layers disposed on the upper and lower surfaces of both sides of the piezoelectric layer, in which according to a method for manufacturing a flexible nanocomposite generator according to the present invention and a flexible nanogenerator, it is possible to manufacture a flexible nanogenerator with a large area and a small thickness. Therefore, the nanogenerator may be used as a portion of a fiber or cloth. Accordingly, the nanogenerator according to the present invention generates power in accordance with bending of attached cloth, such that it is possible to continuously generate power in accordance with movement of a human body.

Abstract: In contrast to a conventional planar CMOS technique in design and fabrication for a field-effect transistor (FET), the present invention provides an SGT CMOS device formed on a conventional substrate using various crystal planes in association with a channel type and a pillar shape of an FET, without a need for a complicated device fabrication process. Further, differently from a design technique of changing a surface orientation in each planar FET, the present invention is designed to change a surface orientation in each SGT to achieve improvement in carrier mobility. Thus, a plurality of SGTs having various crystal planes can be formed on a common substrate to achieve a plurality of different carrier mobilities so as to obtain desired performance.

Abstract: The present invention relates to a 3-dimensional nanostructure having nanomaterials stacked on a graphene substrate; and more specifically, to a 3-dimensional nanostructure having at least one nanomaterial selected from nanotubes, nanowires, nanorods, nanoneedles and nanoparticles grown on a reduced graphene substrate. The present invention enables the achievement of a synergy effect of the 3-dimensional nanostructure hybridizing 1-dimensional nanomaterials and 2-dimensional graphene. The nanostructure according to the present invention is excellent in flexibility and elasticity, and can easily be transferred to any substrate having a non-planar surface. Also, all junctions in nanomaterials, a metal catalyst and a graphene film system form the ohmic electrical contact, which allows the nanostructure to easily be incorporated into a field-emitting device.

Abstract: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating a device such as a secondary battery fabricated on a sacrificial substrate using laser, and an electronic device fabricated thereby.

Abstract: The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Abstract: A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern.

Abstract: The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Abstract: Provided are a method of manufacturing a flexible device and the flexible device, a solar cell, and a light emitting device. The method of manufacturing a flexible device includes providing a device layer on a sacrificial substrate, contacting a flexible substrate on one side surface of the device layer, and removing the sacrificial substrate. A large area device may be transferred onto the flexible substrate with superior alignment to realize and manufacture the flexible device. In addition, since mass production is possible, the economic feasibility may be superior. Also, when a large area solar cell having a thin thickness is manufactured, since a limitation such as twisting of a thin film of a solar cell may be effectively solved, the economic feasibility and stability may be superior.

Abstract: The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Abstract: The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Abstract: Provided are a solar cell and a method of manufacturing the same. The method of manufacturing the solar cell includes stacking a solar cell device layer containing GaN on a sacrificial substrate, etching the solar cell device layer to expose the sacrificial substrate, thereby forming one or more solar cell devices comprising the solar cell device layer, anisotropically etching the exposed sacrificial substrate, contacting the solar cell devices to a stamping processor to remove the solar cell devices from the sacrificial substrate, and transferring the solar cell devices onto a receiving substrate. A high temperature semiconductor process may be performed on a substrate such as a silicon substrate to transfer the solar cell devices onto the substrate, thereby manufacturing flexible solar cells. Also, a large number of solar cells may be excellently aligned on a large area. In addition, economical solar cells may be manufactured.

Abstract: A method of manufacturing LED display is provided. The method provides a sacrificial substrate on which RGB LED device layers are formed, respectively. The method etches and patterns the LED device layer to manufacture RGB LED devices, respectively. The method removes the sacrificial substrate in a lower side of the LED device. The method contacts a stamping processor to the RGB LED devices to separate the RGB LED devices from the sacrificial substrate. The method transfers the LED device, which is attached to the stamping processor, to a receiving substrate.