Abstract: An elecotrophoretic display device includes a first substrate, a gate line formed on the first substrate, a data line crossing the gate line to form a defined area, a source electrode connected to the data line, a drain electrode facing the source electrode to define a channel area, a color filter formed on the first substrate, a first electrode formed on the color filter, the first electrode electrically connected to the drain electrode, a second substrate facing the first substrate, a second electrode formed on the second substrate and a fluid and a plurality of charged particles interposed between the first electrode and the second electrode.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: A display substrate includes an insulation substrate, a gate line formed on the insulation substrate, a data line formed on the insulation substrate and crossing the gate line, a switching element formed on the insulation substrate and electrically connected to the gate line and the data line, and a pixel electrode formed on the insulation substrate. The pixel electrode is electrically connected to the switching element and includes a reflective electrode layer which reflects light and an absorption electrode layer which absorbs light.

Abstract: A display substrate includes a thin film transistor and a pixel electrode. The thin film transistor includes source and drain electrodes, an active layer covering the source and drain electrodes, and a gate electrode formed on the active layer. The pixel electrode includes the same material as that of the gate electrode, and is formed in the process of forming the gate electrode to reduce the number of process steps and the number of masks.

Abstract: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

Abstract: A method of converting image signals for a display device including six-color subpixels is provided, which includes: classifying three-color input image signals into maximum, middle, and minimum; decomposing the classified signals into six-color components; determining a maximum among the six-color components; calculating a scaling factor; and extracting six-color output signals.

Abstract: A thin film transistor array panel is provided, which includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer covering the gate line, a data line formed on the gate insulating layer, a lower passivation layer covering the data line, an upper passivation layer formed on the lower passivation layer and made of organic insulating material, and a pixel electrode formed on the upper passivation layer. The thicknesses of the gate insulating layer, the lower passivation layer, and the pixel electrode are respectively represented as dG, dP, and dI, the refraction indexes of the gate insulating layer, the passivation layer, and the pixel electrode are respectively represented as nG, nP, and nI, and condition equations are satisfied according to: 4(dGnG+dPnP)=, which is an even multiple of the wavelength; and 4dInI=, which is an even multiple of the wavelength.

Abstract: An electrophoretic display panel with a fast response speed and its fabrication method are disclosed. The electrophoretic display panel includes a first array substrate including a gate line and a data line extending perpendicularly to each other, a thin film transistor connected to the gate line and the data line, and a pixel electrode electrically connected to the thin film transistor. The electrophoretic display panel also includes a second array substrate coupled the first array substrate and including a common electrode capable of forming an electric field with the pixel electrode, a spacer formed on at least one of the first array substrate or the second array substrate to define a charging region in the pixel region; and an electrophoretic medium in the charging region between the first and second array substrates.

Abstract: Disclosed is a thin film transistor array panel including a substrate, a data line formed on the substrate, a gate line that intersects the data line and includes a gate electrode, a source electrode connected to the data line, and a drain electrode facing the source electrode. An organic semiconductor contacts the source electrode and the drain electrode via an insulating layer having an opening that defines the location of the organic semiconductor. The insulating layer includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above-described thin film transistor array panel is disclosed.

Abstract: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.

Abstract: An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.

Abstract: An electrophoretic display device having improved frontal reflectance includes a first substrate including a first electrode of a transparent material having a first optical pattern, a second substrate opposing the first substrate and including a plurality of second electrodes, a spacer interposed between the first and second substrates to define a space between the first and second substrates, and a image display layer formed in the space formed by the first and second substrates and the spacer to display an image by an electric field generated between the first and second electrodes.

Abstract: An organic thin film transistor (TFT) substrate with a simplified fabrication process is disclosed. The TFT substrate includes a gate line and a data line and an organic TFT connected to the gate line and the data line. The gate line and the data line define a pixel region where a pixel electrode is formed. A first contact portion connects the data line to the organic TFT, and a second contact portion connects the pixel electrode to the organic TFT. A passivation layer covers the organic TFT. The organic TFT substrate also includes a bank insulating layer with a first contact hole for connecting the first contact portion to the organic TFT, a second contact hole for connecting the second contact portion to the organic TFT, a first sub bank defining a location of the gate insulating layer, and a second sub bank defining a location of the passivation layer.

Abstract: An organic thin film transistor (OTFT) array panel for a display device includes a gate line and a pixel electrode formed on a substrate, the gate line and pixel electrode each having a first conductive layer including a transparent conductive oxide and a second conductive layer including a metal, a data line crossing the gate line and including a source electrode, a drain electrode facing the source electrode and connected with the pixel electrode, and an organic semiconductor in contact with the source electrode and the drain electrode.

Abstract: An organic thin film transistor (“TFT”) substrate for facilitating control of the turn-on and turn-off actions of the TFT. The organic TFT substrate includes a gate line on a substrate, a pixel electrode in the same plane as the gate line, a data line insulated from the gate line, an organic TFT including a gate electrode connected to the gate line, a source electrode connected to the data line and insulated from the gate line, a drain electrode connected to the pixel electrode and insulated from the gate electrode, and an organic semiconductor layer contacting each of the source and drain electrodes, and a gate-insulating layer on the gate line and the gate electrode.

Abstract: A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.

Abstract: A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.

Abstract: A thin film transistor array panel including a substrate, a plurality of data lines disposed on the substrate, an interlayer insulating layer disposed on the data lines and including contact holes through which the data lines are exposed, a plurality of source electrodes, each of the source electrodes disposed on the interlayer insulating layer and connected to the data line through the contact hole, a plurality of pixel electrodes, each of the pixel electrodes disposed on the interlayer insulating layer and including a drain electrode that faces a source electrode, organic semiconductors disposed on and partially overlapping the source electrodes and the drain electrodes, a gate insulating layer disposed on the organic semiconductors and gate lines disposed on the gate insulating layer and including gate electrodes overlapping the organic semiconductors.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: A thin film transistor array panel includes a substrate with a plurality of gate lines and data lines crossing each other, wherein the gate lines and the data lines define pixel groups each including a plurality of pixels, and a plurality of thin film transistors are connected to the gate lines and the data lines and include an organic semiconductor, wherein the thin film transistors from adjacent pixels of different pixel groups are disposed proximate to one another.