Abstract: A display device, comprising an insulating substrate; a data conductor formed on the insulating substrate and comprising a conductive film; a thin film transistor having at least one source electrode electrically connected with the conductive film, and a drain electrode formed along a circumference of the source electrode and spaced therefrom; and a pixel electrode which is electrically connected with the conductive film.

Abstract: A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.

Abstract: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

Abstract: A thin film transistor array panel includes a substrate with a plurality of gate lines and data lines crossing each other, wherein the gate lines and the data lines define pixel groups each including a plurality of pixels, and a plurality of thin film transistors are connected to the gate lines and the data lines and include an organic semiconductor, wherein the thin film transistors from adjacent pixels of different pixel groups are disposed proximate to one another.

Abstract: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.

Abstract: A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.

Abstract: Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area. Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

Abstract: A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.

Abstract: An electrophoretic display panel with a fast response speed and its fabrication method are disclosed. The electrophoretic display panel includes a first array substrate including a gate line and a data line extending perpendicularly to each other, a thin film transistor connected to the gate line and the data line, and a pixel electrode electrically connected to the thin film transistor. The electrophoretic display panel also includes a second array substrate coupled the first array substrate and including a common electrode capable of forming an electric field with the pixel electrode, a spacer formed on at least one of the first array substrate or the second array substrate to define a charging region in the pixel region; and an electrophoretic medium in the charging region between the first and second array substrates.

Abstract: The present invention provides an organic thin film transistor substrate and a method of manufacturing the same capable of uniformly forming the thickness of a gate insulating layer and a protective layer and preventing overflow of an organic semiconductive layer.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: A liquid crystal display has, a plurality of pixel including a switching element, a plurality of gate lines extending transversally, a plurality of data lines extending longitudinally, a first storage electrode line extending transversally, a second storage electrode line extending longitudinally, a third storage electrode line connecting two of the adjacent second storage electrode line, a repair assistant formed in an area that the data line crosses over the third storage electrode line. The liquid crystal display can be repaired with good quality by shortening the repair path.

Abstract: A liquid crystal display includes a data line and a gate line including a gate electrode on a first substrate, a first partition on the gate and data lines and including a first opening exposing the gate electrode, a gate insulator in the first opening, a source electrode on the gate insulator, a pixel electrode including a drain electrode facing the source electrode and on the gate insulator, a second partition on the source and pixel electrodes and including a second opening exposing portions of the source and drain electrodes, an organic semiconductor in the second opening, a second substrate facing the first substrate and a liquid crystal layer between the first and second substrates and having a same thickness as the second partition.

Abstract: Embodiments of the invention provide a thin film transistor substrate, comprising: an insulating substrate; a gate wire formed on the insulating substrate; a first gate insulating layer made of an inorganic material, formed on the gate wire and having a first insulating layer contact hole for exposing at least a part of the gate wire; a second gate insulating layer made of an organic material, formed on the first gate insulating film and having a second insulating layer contact hole corresponding to the first insulating layer contact hole; a source electrode and a drain electrode formed on the second gate insulating layer and being aparted from each other to be defining a channel area; and an organic semiconductor layer formed on the channel area. Accordingly, the present invention provides an organic TFT substrate in which a characteristic of a TFT is improved.

Abstract: In a method of fabricating a thin film transistor array substrate for a liquid crystal display, a gate line assembly is formed on a substrate with a chrome-based under-layer and an aluminum alloy-based over-layer while proceeding in the horizontal direction. The gate line assembly has gate lines, and gate electrodes, and gate pads. A gate insulating layer is deposited onto the insulating substrate such that the gate insulating layer covers the gate line assembly. A semiconductor layer and an ohmic contact layer are sequentially formed on the gate insulating layer. A data line assembly is formed on the ohmic contact layer with a chrome-based under-layer and an aluminum alloy-based over-layer. The data line assembly has data lines crossing over the gate lines, source electrodes, drain electrodes, and data pads. A protective layer is deposited onto the substrate, and patterned to thereby form contact holes exposing the drain electrodes, the gate pads, and the data pads.

Abstract: A flat panel display includes a plurality of gate lines; a plurality of data lines insulated with the gate lines, the data lines defining a pixel by intersecting the gate line; and a thin film transistor (TFT) being provided in each of the pixels and containing an organic semiconductor layer, wherein a distance between the adjacent TFTs in a direction extended to the gate line is longer than a width of the pixel in a direction extended to the gate line.

Abstract: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads.

Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.

Abstract: An display device having a thin film transistor with improved characteristics comprising a gate conductor including a gate electrode formed on an insulating substrate; a gate insulating layer formed on the gate electrode; a conductive layer comprising a plurality of layers including a source electrode and a drain electrode formed on the gate insulating layer and separated from each other across the gate electrode to define a channel region; and an organic semiconductor layer formed in the channel region, wherein the conductive layer comprises a metal layer and a transparent electrode layer.

Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.