Abstract: A memory system is provided that performs error correction at a memory device level. The memory system comprises a memory hub device integrated in the memory module and a link interface integrated in the memory hub device that provides a communication pathway between the memory hub device and an external memory controller. The link interface comprises first error correction logic integrated in the link interface that performs error correction operations on first data that is received from the external memory controller via a first memory channel to be transmitted to a set of memory devices. The first error correction logic generates a first error signal to the external memory controller in response to the first error correction logic detecting a first error in the first data. Link interface control logic integrated in the link interface controls the transmission of the first data to the set of memory devices.

Abstract: A memory system, data processing system, and method are provided for using cache that is embedded in a memory hub device to replace failed memory cells. A memory module comprises an integrated memory hub device. The memory hub device comprises an integrated memory device data interface that communicates with a set of memory devices coupled to the memory hub device and a cache integrated in the memory hub device. The memory hub device also comprises an integrated memory hub controller that controls the data that is read or written by the memory device data interface to the cache based on a determination whether one or more memory cells within the set of memory devices has failed.

Abstract: A memory system is provided that implements an asynchronous boundary in a memory module. The memory system comprises a memory hub device integrated in a memory module. The memory system also comprises a set of memory devices coupled to the memory hub device. The memory hub device comprises a command queue that receives a memory access command from an external memory controller via a memory channel at a first operating frequency. The memory system further comprises a memory hub controller integrated in the memory hub device. The memory hub controller reads the memory access command from the command queue at a second operating frequency. By receiving the memory access command at the first operating frequency and reading the memory access command at the second operating frequency an asynchronous boundary is implemented within the memory hub device of the memory module.

Abstract: A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Abstract: A method is provided that supports partial cache line read and write operations to a memory module to reduce read and write data traffic on a memory channel. In a memory hub controller integrated in the memory module determines an amount of data to be transmitted to or from a set of memory devices of the memory module, in responsive to an access request. The memory hub controller generates a burst length field corresponding to the amount of data. The memory controller controls the amount of data that is transmitted to or from the memory devices using the burst length field. The amount of data is equal to or less than a standard data burst amount of data for the set of memory devices.

Abstract: A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon.

Abstract: A memory subsystem with positional read data latency that includes one or more memory modules, a memory controller and one or more memory busses is provided. The memory controller includes instructions for providing positional read data latency. The memory modules and the memory controller are interconnected via the memory busses.

Abstract: A memory subsystem that includes segment level sparing. The memory subsystem includes a cascaded interconnect system with segment level sparing. The cascaded interconnect system includes two or more memory assemblies and a memory bus. The memory bus includes multiple segments and the memory assemblies are interconnected via the memory bus.

Abstract: A multi-mode memory buffer device for use in various memory subsystem structures. The buffer device includes a packetized multi-transfer interface which is redriven to permit connection between a first memory assembly and cascaded memory assemblies. The buffer device also includes a memory interface adapted to connect to either a second memory assembly or directly to memory devices.

Abstract: Testing a model of a logic circuit model. The testing includes generating valid random input stimulus sequences for a logic circuit model. Enumerating critical resource requirements, enumerating critical resource availabilities does this, and selecting of stimulus sequences and determining legal times for execution of said stimulus sequences based on resource availability. This includes generating a plurality of possible combinations of input stimulus sequences and generating an array representation of critical resource requirements. These are used to generate an array representation of critical resources availabilities.

Abstract: Systems for providing performance monitoring in a memory system. The memory system includes a memory controller, a plurality of memory devices, a memory bus and a memory hub device. The memory controller receives and responds to memory access requests. The memory bus is in communication with the memory controller. The memory hub device is in communication with the memory bus. The memory hub device includes a memory interface for transferring one or more of address, control and data information between the memory hub device and the memory controller via the memory bus. The memory hub device also includes a memory device interface for communicating with the memory devices. The memory hub device further includes a performance monitor for monitoring and reporting one or more of memory bus utilization, memory device utilization, and performance characteristics over defined intervals during system operation.

Abstract: A dual inline memory module (DIMM) includes a card having a length of about 151.2 to about 151.5 millimeters, a plurality of individual local memory devices attached to the card, and a buffer device attached to the card, the buffer device configured for converting a packetized memory interface. The card includes at least 276 pins configured thereon including a plurality of high-speed bus interface pills arranged on said card for communicating with a plurality of high-speed busses. The high-speed bus interface pins associated with a single high-speed bus are located on one side of the card with respect to a midpoint of the length of the card, thus the pin assignments are defined such that the performance of the DIMM in a system is optimized for high frequency operation.

Abstract: A computer program product and a hub device for deriving clocks in a memory system are provided. The computer program product includes a storage medium readable by a processing circuit and storing instructions for execution by the processing circuit for facilitating a method. The method includes receiving a reference oscillator clock at the hub device. The hub device is in communication with a controller channel via a controller interface and in communication with a memory device via a memory interface. A base clock operating at a base clock frequency is derived from the reference oscillator clock. A memory interface clock is derived by multiplying the base clock by a memory multiplier. A controller interface clock is derived by multiplying the base clock by a controller multiplier. The memory interface clock is applied to the memory interface and the controller interface clock is applied to the controller interface.

Abstract: A memory subsystem with positional read data latency that includes a cascaded interconnect system with one or more memory modules, a memory controller and one or more memory busses. The memory controller includes instructions for providing positional read data latency. The memory modules and the memory controller are interconnected by a packetized multi-transfer interface via the memory busses.

Abstract: A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Abstract: A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.

Abstract: A memory system is provided that supports partial cache line write operations to a memory module to reduce write data traffic on a memory channel. The memory system comprises a memory hub device integrated in the memory module and a set of memory devices coupled to the memory hub device. The memory hub device comprises burst logic integrated in the memory hub device. The burst logic determines an amount of write data to be transmitted to the set of memory devices and generates a burst length field corresponding to the amount of write data. The memory hub also comprises a memory hub controller integrated in the memory hub device. The memory hub controller controls the amount of write data that is transmitted using the burst length field. The memory hub device transmits the amount of write data that is equal to or less than a conventional data burst amount.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory controller and at least one memory module coupled to the memory controller. In the memory systems, each memory module comprises at least one memory hub device integrated in the memory module. In the memory system, each memory hub device in the memory module comprises a first memory device data interface that communicates with a first set of memory devices and a second memory device data interface that communicates with a second set of memory devices. In the memory system, the first set of memory devices which are separate from the second set of memory devices are communicated with by the memory hub device via the separate first and second memory device data interfaces.

Abstract: A memory system is provided that enhances the memory bandwidth available through a memory module. The memory system includes a memory hub device integrated in a memory module. The memory system includes a first memory device data interface integrated in the memory hub device that communicates with a first set of memory devices integrated in the memory module. The memory system also includes a second memory device data interface integrated in the memory hub device that communicates with a second set of memory devices integrated in the memory module. In the memory system, the first set of memory devices are separate from the second set of memory devices. In the memory system, the first and second set of memory devices are communicated with by the memory hub device via the separate first and second memory device data interfaces.

Abstract: A memory system is provided for performing error correction operations in a memory module. The memory system comprises a memory hub device integrated in the memory module and a set of memory devices coupled to the memory hub device. The memory hub device comprises a link interface integrated into the memory hub device that provides a communication pathway between an external memory controller and the set of memory devices. The memory hub device also comprises error correction logic integrated in the memory hub device and coupled to the link interface. The error correction logic performs error correction operations on data transferred between the link interface and the set of memory devices. The memory hub device transmits and receives data via a memory channel between the external memory controller and the link interface without any error correction code.