Abstract: Embodiments of buffer coatings for semiconductor and integrated circuit manufacturing are presented herein.

Abstract: The invention relates to an assay for determining if ligands bind to a receptor. The method involves the use of complexes, where the receptor is linked to a reporter molecule via an (His)n chain. When ligand binds to the receptor, the reporter molecule, which is preferably a peryline, yields a signal.

Abstract: A composite photoresist comprises a photoresist material and a filler material dispersed within the photoresist material, wherein the filler material includes a plurality of nanoparticles. The photoresist material may comprise an acrylic-based photoresist, a novolak-based photoresist, a polyhydroxystyrene-based photoresist, a SLAM, or a BARC. The filler material may comprise base-soluble styrene-butadiene rubber nanospheres, nitrile-butadiene rubber nanospheres, polystyrene-based nanoparticles, acrylic-based nanoparticles, or inorganic nanoparticles. The nanoparticles may have an average diameter that is between around 10 nm and around 1000 nm and may have a loading in the photoresist material that is between around 5% and 50%. The composite photoresist may be used to form die-side metal bumps for use in a C4 connection that have a roughened sidewall surface but a smooth top surface.

Abstract: Embodiments of the invention include apparatuses and methods relating to die-side bumps having a tapered cross-section. In one embodiment, the tapered die-side bump is electrically coupled to a solder bump on a package substrate.

Abstract: The present invention relates to insect odorant receptor genes and methods for identifying odorant receptor genes. The invention provides nucleotide sequences of insect odorant receptor genes Or83b, amino acid sequences of their encoded proteins (including peptides or polypeptides), and related products and methods. The nucleic acids of the invention may be operatively linked to promoter sequences and transformed into host cells. Methods of production of an Or83b odorant receptor protein (e.g., by recombinant means), and derivatives and analogs thereof, are provided. Antibodies to an Or83b odorant receptor protein, and derivatives and analogs thereof, are provided. Methods for identifying molecules that bind or modulate the activity of these Or83b odorant receptor genes are provided. Molecules found to bind or modulate the activity of Or83b genes may be formulated into pest control agents by providing a carrier.

Abstract: The present invention includes a method that provides a first wafer; forms a first raised contact from a first plug on the first wafer; provides a second wafer; forms a second raised contact from a second plug on the second wafer; applies an anisotropic conductive adhesive over the first wafer; aligns the second wafer to the first wafer; attaches the second wafer to the anisotropic conductive adhesive to form a continuous and conductive path between the first raised contact and the second raised contact. The present invention also includes a structure that has an anisotropic conductive film, the anisotropic conductive film has a front surface and a rear surface; a first raised contact is located over the front surface, the first raised contact forming part of a first wafer; and a second raised contact located over the rear surface, the second raised contact forming part of a second wafer, where the second raised contact faces the first raised contact.

Abstract: Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

Abstract: The invention relates to a method for determining if a test compound, or a mix of compounds, modulates the interaction between two proteins of interest. The determination is made possible via the use of two recombinant molecules, one of which contains the first protein a cleavage site for a proteolytic molecules, and an activator of a gene. The second recombinant molecule includes the second protein and the proteolytic molecule. If the test compound binds to the first protein, a reaction is initiated whereby the activator is cleaved, and activates a reporter gene.

Abstract: The invention discloses a method of electroplating a material onto a semiconductor substrate. A substrate is placed in a cylindrical processing chamber enclosure. A nozzle for spraying a liquid electroplating solution opposes the top surface of the substrate. The electroplating solution flows through the nozzle and outward angularly from the tip of the nozzle, so that the solution flows rotationally on the surface of the substrate.

Abstract: A process flow to make an interconnect structure with one or more thick metal layers under Controlled Collapse Chip Connection (C4) bumps at a die or wafer level. The interconnect structure may be used in a backend interconnect of a microprocessor. The process flow may include forming an inter-layer dielectric with spray coating or lamination over a surface with high aspect ratio structures.

Abstract: A process for selectively removing a conductive layer from a wafer that includes sub-micron sized noble metal interconnect features is disclosed, the method including placing the wafer into an electrolyte solution. Also immersed in the electrolyte solution are a counter electrode, a reference electrode, and a working electrode. The wafer is coupled to the working electrode terminal on a potentiostat. The counter electrode is connected to the counter electrode terminal on a potentiostat, and the reference electrode is connected to a reference electrode terminal on the potentiostat. The potentiostat adjusts the electrical current flowing between the wafer and the counter electrode to maintain a constant voltage between the wafer and the reference electrode as the conductive layer is removed. The removal of the conductive layer is finished when the current that maintains the constant voltage between the wafer and the reference electrode drops to a residual level.

Abstract: A cross-linked photoresist may be stripped without using water to reduce substrate corrosion. In one embodiment, a transesterification reaction may use an alcohol instead of water as the co-solvent for an organic base.

Abstract: A process for selectively removing a conductive layer from a wafer that includes sub-micron sized noble metal interconnect features is disclosed. The wafer having sub-micron sized noble metal interconnect features and a conductive film to be removed is placed into an electrolyte solution. Also immersed in the electrolyte solution are a counter electrode, a reference electrode, and a working electrode. The wafer is coupled to the working electrode terminal on a potentiostat. The counter electrode is connected to the counter electrode terminal on a potentiostat, and the reference electrode is connected to a reference electrode terminal on the potentiostat. The potentiostat adjusts the electrical current flowing between the wafer and the counter electrode to maintain a constant voltage between the wafer and the reference electrode as the conductive layer is removed.

Abstract: A process for selectively removing a conductive layer from a wafer that includes sub-micron sized noble metal interconnect features is disclosed. The wafer having sub-micron sized noble metal interconnect features and a conductive film to be removed is placed into an electrolyte solution. Also immersed in the electrolyte solution are a counter electrode, a reference electrode, and a working electrode. The wafer is coupled to the working electrode terminal on a potentiostat. The counter electrode is connected to the counter electrode terminal on a potentiostat, and the reference electrode is connected to a reference electrode terminal on the potentiostat. The potentiostat adjusts the electrical current flowing between the wafer and the counter electrode to maintain a constant voltage between the wafer and the reference electrode as the conductive layer is removed.

Abstract: A single step electroplating process for interconnect via fill and metal line formation on a semiconductor substrate is disclosed. In this process, a barrier layer is formed onto a surface of a substrate that has at least one via and then a conductive layer is formed onto the barrier layer. Next, a photoresist layer is applied and patterned on top of the conductive layer. The via plugs and metal lines are then deposited on the substrate simultaneously using an electroplating process. After the electroplating process is completed, the photoresist and the conductive layer between the deposited metal lines are removed. The process provides a simple, economical and highly controllable means of forming metal interconnect systems while avoiding the difficulties associated with depositing and patterning metal by traditional semiconductor fabrication techniques.

Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.

Abstract: The invention discloses a method of electroplating a material onto a semiconductor substrate. A substrate is placed in a cylindrical processing chamber enclosure. A nozzle for spraying a liquid electroplating solution opposes the top surface of the substrate. The electroplating solution flows through the nozzle and outward angularly from the tip of the nozzle, so that the solution flows rotationally on the surface of the substrate.

Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.

Abstract: One embodiment of the present invention includes a chemical-mechanical polishing (CMP) slurry. The slurry is comprised of one or more ferrocenium salts that is or are reduced, during use, to ferrocene. The slurry also includes an abrasive and a concentration of hydronium ions effective to impart a pH of less than 7.

Abstract: A single step electroplating process for interconnect via fill and metal line formation on a semiconductor substrate is disclosed. In this process, a barrier layer is formed onto a surface of a substrate that has at least one via and then a conductive layer is formed onto the barrier layer. Next, a photoresist layer is applied and patterned on top of the conductive layer. The via plugs and metal lines are then deposited on the substrate simultaneously using an electroplating process. After the electroplating process is completed, the photoresist and the conductive layer between the deposited metal lines are removed. The process provides a simple, economical and highly controllable means of forming metal interconnect systems while avoiding the difficulties associated with depositing and patterning metal by traditional semiconductor fabrication techniques.