Patents by Inventor Kevin J. Linthicum

Kevin J. Linthicum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200243651
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: December 21, 2018
    Publication date: July 30, 2020
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Publication number: 20200135866
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: May 29, 2019
    Publication date: April 30, 2020
    Applicants: MACOM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20190229190
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: December 21, 2018
    Publication date: July 25, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Publication number: 20190214468
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: December 4, 2018
    Publication date: July 11, 2019
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Patent number: 10177229
    Abstract: A semiconductor material includes a compositionally-graded transition layer, an intermediate later and a gallium nitride material layer. The compositionally-graded transition layer has a back surface and a top surface, and includes a gallium nitride alloy. The gallium concentration in the compositionally-graded transition layer increases from the back surface to the front surface. The intermediate layer is formed under the compositionally-graded transition layer. The gallium nitride material layer is formed over the compositionally-graded transition layer, and has a crack level of less than 0.005 ?m/?m2.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: January 8, 2019
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Publication number: 20180122929
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 3, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20180122928
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 25, 2017
    Publication date: May 3, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Publication number: 20180026098
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: June 5, 2017
    Publication date: January 25, 2018
    Applicant: MACOM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • Patent number: 9806182
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: October 31, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Patent number: 9773898
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: September 26, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Patent number: 9673281
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: June 6, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts
  • Patent number: 9627473
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: April 18, 2017
    Assignee: MACOM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, Jr.
  • Publication number: 20170069713
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
  • Publication number: 20170069722
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069746
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Publication number: 20170069716
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum
  • Publication number: 20170069723
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069745
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069721
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • Publication number: 20170069717
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: Kevin J. Linthicum, John Claassen Roberts