Patents by Inventor Kevin J. Linthicum

Kevin J. Linthicum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES
    Publication number: 20170069713
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson, James W. Cook, JR.
  • METHODS OF SPATIALLY IMPLANTING SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
    Publication number: 20170069500
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEMICONDUCTOR STRUCTURES
    Publication number: 20170069745
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING MULTIPLE SPATIALLY PATTERNED IMPLANTED SPECIES
    Publication number: 20170069723
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventor: Kevin J. Linthicum
  • III-NITRIDE SEMICONDUCTOR STRUCTURES COMPRISING SPATIALLY PATTERNED IMPLANTED SPECIES
    Publication number: 20170069746
    Abstract: III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
    Type: Application
    Filed: September 8, 2015
    Publication date: March 9, 2017
    Applicant: M/A-COM Technology Solutions Holdings, Inc.
    Inventors: John Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
  • Semiconductor Material Having a Compositionally-Graded Transition Layer
    Publication number: 20170047407
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: August 18, 2016
    Publication date: February 16, 2017
    Inventors: T. Warren Weeks, JR., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Semiconductor structure with compositionally-graded transition layer
    Patent number: 9461119
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: October 4, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium nitride devices with discontinuously graded transition layer
    Patent number: 9437686
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: December 22, 2014
    Date of Patent: September 6, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • III-nitride based semiconductor structure
    Patent number: 9437687
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: September 6, 2016
    Assignee: Infineon Technologies Americas Corp.
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • III-Nitride Semiconductor Structure with Intermediate and Transition Layers
    Publication number: 20160126315
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: October 29, 2015
    Publication date: May 5, 2016
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • III-Nitride Based Semiconductor Structure
    Publication number: 20150287792
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: June 18, 2015
    Publication date: October 8, 2015
    Inventors: T. Warren Weeks, JR., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Semiconductor Structure with Compositionally-Graded Transition Layer
    Publication number: 20150187880
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: December 22, 2014
    Publication date: July 2, 2015
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium nitride semiconductor structures with compositionally-graded transition layer
    Patent number: 9064775
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: June 23, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium Nitride Devices with Discontinuously Graded Transition Layer
    Publication number: 20150108495
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: December 22, 2014
    Publication date: April 23, 2015
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium nitride devices with aluminum nitride intermediate layer
    Patent number: 8937335
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 20, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium nitride devices with gallium nitride alloy intermediate layer
    Patent number: 8928035
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 6, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium nitride devices with aluminum nitride alloy intermediate layer
    Patent number: 8928034
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 6, 2015
    Assignee: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
    Publication number: 20140353680
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: August 5, 2014
    Publication date: December 4, 2014
    Inventors: T. Warren Weeks, JR., Edwin Lanier Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
    Publication number: 20140131659
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: November 19, 2013
    Publication date: May 15, 2014
    Applicant: International Rectifier Corporation
    Inventors: T. Warren Weeks, JR., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum
  • Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
    Publication number: 20140097446
    Abstract: The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
    Type: Application
    Filed: November 19, 2013
    Publication date: April 10, 2014
    Applicant: International Rectifier Corporation
    Inventors: T. Warren Weeks, Jr., Edwin L. Piner, Thomas Gehrke, Kevin J. Linthicum