Abstract: Embodiments herein relate to magnetically doping a spin orbit torque electrode (SOT) in a magnetic random access memory apparatus. In particular, the apparatus may include a free layer of a magnetic tunnel junction (MTJ) coupled to a SOT electrode that is magnetically doped to apply an effective magnetic field on the free layer, where the free layer has a magnetic polarization in a first direction and where current flowing through the magnetically doped SOT electrode is to cause the magnetic polarization of the free layer to change to a second direction that is substantially opposite to the first direction.

Abstract: Embodiments herein relate to a system, apparatus, and/or process for producing a spin orbit torque (SOT) electrode that includes a first layer with a first side to couple with a free layer of a magnetic tunnel junction (MTJ) and a second layer coupled with a second side of the first layer opposite the first side, where a value of an electrical resistance in the first SOT layer is lower than a value of an electrical resistance in the second SOT layer and where a current applied to the SOT electrode is to cause current to preferentially flow in the first SOT layer to cause a magnetic polarization of the free layer to change directions. During production of the SOT electrode, the second layer may act as an etch stop.

Abstract: A spin orbit torque (SOT) memory device includes a magnetic tunnel junction (MTJ) device with one end coupled with a first electrode and an opposite end coupled with a second electrode including a spin orbit torque material. In an embodiment, a second electrode is coupled with the free magnet and coupled between a pair of interconnect line segments. The second electrode and the pair of interconnect line segments include a spin orbit torque material. The second electrode has a conductive path cross-section that is smaller than a cross section of the conductive path in at least one of the interconnect line segments.

Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a magnetic tunnel junction (MTJ) device on a portion of the electrode. The electrode has a first SOC layer and a second SOC layer on a portion of the first SOC layer, where at least a portion of the first SOC layer at an interface with the second SOC layer includes oxygen.

Abstract: A MTJ device includes a free (storage) magnet and fixed (reference) magnet between first and second electrodes, and a programmable booster between the free magnet and one of the electrodes. The booster comprises a magnetic material layer. The booster may further comprise an interface layer that supports the formation of a skyrmion spin texture, or a stable ferromagnetic domain, within the magnetic material layer. A programming current between two circuit nodes may be employed to set a position of the skyrmion or magnetic domain within the magnetic material layer to be more proximal to, or more distal from, the free magnet. The position of the skyrmion or magnetic domain to the MTJ may modulate TMR ratio of the MTJ device. The TMR ratio modulation may be employed to discern more than two states of the MTJ device. Such a multi-level device may, for example, be employed to store 2 bits/cell.

Abstract: An integrated circuit structure includes a first material block comprising a first block insulator layer and a first multilayer stack on the first block insulator layer, the first multilayer stack comprising interleaved pillar electrodes and insulator layers. A second material block is stacked on the first material block and comprises a second block insulator layer, and a second multilayer stack on the second block insulator layer, the second multilayer stack comprising interleaved pillar electrodes and insulator layers. At least one pillar extends through the first material block and the second material block, wherein the at least one pillar has a top width at a top of the first and second material blocks that is greater than a bottom width at a bottom of the first and second material blocks.

Abstract: An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.

Abstract: There is provided a device and method of filtering outliers from physiological values. The method comprises: (a) populating a window with n physiological values taken, in sequence, from a sequence of physiological values, wherein n is a positive integer; (b) determining whether the variability in the physiological values within the window is less than a predetermined threshold; (c) responsive to the variability in the physiological values within the window being less than a predetermined threshold, determining that the window comprises no outliers, and/or responsive to the variability in the physiological values within the window not being less than a predetermined threshold, determining that the window comprises at least one outlier.

Abstract: A spin orbit torque (SOT) memory device includes an SOT electrode on an upper end of an MTJ device. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet and is coupled with a conductive interconnect at a lower end of the MTJ device. The SOT electrode has a footprint that is substantially the same as a footprint of the MTJ device. The SOT device includes a first contact and a second contact on an upper surface of the SOT electrode. The first contact and the second contact are laterally spaced apart by a distance that is no greater than a length of the MTJ device.

Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, where the free magnet structure includes a free magnet that is dipole coupled with a magnetic stability enhancement layer. The pMTJ device further includes a fixed layer and a tunnel barrier between the free layer and the fixed layer.

Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit torque material, where the SOT material includes iridium and manganese and a perpendicular magnetic tunnel junction (pMTJ) device on a portion of the electrode. The pMTJ device includes a free magnet structure electrode, a fixed layer and a tunnel barrier between the free layer and the fixed layer and a SAF structure above the fixed layer. The Ir—Mn SOT material and the free magnet have an in-plane magnetic exchange bias.

Abstract: A spin orbit torque (SOT) memory device includes a MTJ device on a SOT electrode, where a first portion of the SOT electrode extends beyond a sidewall of the MTJ by a first length that is no greater than a height of the MTJ, and where a second portion of the first electrode extends from the sidewall and under the MTJ by a second length that is no greater than a width of the MTJ. The MTJ device includes a free magnet, a fixed magnet and a tunnel barrier between the free magnet and the fixed magnet.

Abstract: An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises an antiferromagnetic (AFM) material which is doped with a doping material (Pt, Ni, Co, or Cr) and a structure adjacent to the interconnect such that the magnetic junction and the structure are on opposite surfaces of the interconnect, wherein the structure comprises a magnet with a second magnetization substantially different from the first magnetization.

Abstract: Methods and compositions for improving performance of flocculants in an industrial production process. Methods include pH triggered cross-linking reaction between a flocculating agent, such as dextran, and a composition comprising a boronic acid-containing polymer. The pH trigger can be provided by a fluid having a pH of 8 or more. The production process can be a Bayer Process and the fluid is caustic liquor or slurry in the fluid circuit of the Bayer, wherein the reaction time is reduced over conventional methods and the cross-linked dextran composition effectuates improved flocculation of the trihydrate particles.

Abstract: A metrology system may include one or more casings that fit within an interior cavity of a sample transport device, an illumination source within one of the one or more casings, one or more illumination optics within one of the one or more casings for directing illumination from the illumination source to a sample located in the interior cavity of the sample transport device, one or more collection optics within one of the one or more casings for light from the sample in response to the illumination from the illumination source, and one or more detectors within one of the one or more casings for generating metrology data based on at least a portion of the light collected by the one or more collection optics.

Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

Abstract: A compression molding assembly for molding a honeycomb core, including a plurality of cells defined by a plurality of walls, of a blocker door is provided. The compression molding assembly includes a ram plate comprising a plurality of openings defined therethrough and a plurality of core inserts coupled to the ram plate such that the plurality of core inserts are configured to form the honeycomb core of the blocker door. Each core insert is removably coupled with a respective opening of the plurality of openings such that each core insert is configured to form a respective cell of the plurality of cells.

Abstract: Methods of recovering metals from metal-bearing materials, and more particularly, methods for improving leaching efficiency in extraction processes by employing a surfactant composition in the extraction process, as well as slurries useful in the methods of recovering metals are provided.

Abstract: Decorative, multi-layer surfacing materials, surfaces made therewith, methods of making such and wireless power transmission using the same, which surfacing materials comprise: a first resin-impregnated paper layer and a second resin-impregnated paper layer, and a first conductive material having a first terminus and a second terminus and capable of carrying an electric current from the first terminus to the second terminus; wherein the first conductive material is disposed on a first surface of the first resin-impregnated paper layer; wherein the first resin-impregnated paper layer and the second resin-impregnated paper layer are disposed in a stacked and compressed such that the first conductive material is encapsulated between the first resin-impregnated paper layer and the second resin-impregnated paper layer; and wherein at least one of the first resin-impregnated paper layer, the second resin-impregnated paper layer or an optional additional resin-impregnated paper layer is a decorative layer.

Abstract: The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers and a tunnel barrier layer disposed between and abutting the fixed Heusler magnetic layer and the free Heusler magnetic layer, wherein the tunnel barrier layer is lattice matched to the free Heusler magnetic layer. In one embodiment, the tunnel barrier layer may be a strontium titanate layer.