Abstract: A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter.

Abstract: A method includes receiving a first set of parameters associated with a subset of a plurality of die on a wafer. A die health metric is determined for at least a portion of the plurality of die based on the first set of parameters. The die health metric includes at least one process component associated with the fabrication of the die and at least one performance component associated with an electrical performance characteristic of the die. At least one of the die is tested. A protocol of the testing is determined based on the associated die health metric.

Abstract: A method includes determining at least a first characteristic of a device during a first test insertion and storing the first characteristic. The device is identified during a second test insertion. The first characteristic is retrieved responsive to the identification of the device. A test program for the second insertion is configured based on the first characteristic. The configured test program is executed to test the device during the second test insertion.

Abstract: A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.

Abstract: A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.

Abstract: A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Abstract: A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric. A method includes collecting trace data associated with a plurality of device testers. The trace data for each of the device testers is compared to a reference trace data set to generate tester health metrics for each of the device testers based on the difference therebetween. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric.

Abstract: A method includes receiving a performance distribution for a plurality of devices to be fabricated in a semiconductor process flow. A performance target for a particular device is specified based on the performance distribution. A stressed material is formed in a recess adjacent a gate electrode of a transistor in the particular device in accordance with at least one operating recipe. The recess is spaced from the gate electrode by a gate proximity distance. A target value for the gate proximity distance is determined based on the performance target. At least one parameter of the operating recipe is determined based on the target value for the gate proximity distance.

Abstract: A method includes defining a reference model of a system having a plurality of terms for modeling data associated with the system. A reference fit error metric is generated for the reference model. A set of evaluation models each having one term different than the reference model is generated. An evaluation fit error metric for each of the evaluation models is generated. The reference model is replaced with a selected evaluation model responsive to the selected evaluation model having an evaluation fit error metric less than the reference fit error metric. The model evaluation is repeated until no evaluation model has an evaluation fit error metric less than the reference fit error metric. The reference model is trained using the data associated with the system, and the trained reference model is employed to determine at least one characteristic of the system.

Abstract: A method for monitoring a photolithography system includes defining a model of the photolithography system for modeling top and bottom critical dimension data associated with features formed by the photolithography system as a function of dose and focus. A library of model inversions is generated for different combinations of top and bottom critical dimension values. Each entry in the library specifies a dose value and a focus value associated with a particular combination of top and bottom critical dimension values. A top critical dimension measurement and a bottom critical dimension measurement of a feature formed by the photolithography system using a commanded dose parameter and a commanded focus parameter are received. The library is accessed using the top and bottom critical dimension measurements to generate values for a received dose parameter and the received focus parameter.

Abstract: A method includes specifying a plurality of optical proximity correction metrology sites on a wafer. Metrology data is collected from at least a subset of the metrology sites. Data values are predicted for the subset of the metrology sites using an optical proximity correction design model. The collected metrology data is compared to the predicted data values to generate an optical proximity correction metric. A problem condition associated with the optical proximity correction design model is identified based on the optical proximity correction metric.

Abstract: A method includes generating a layout for an integrated circuit device in accordance with a plurality of layout design rules. A plurality of metrology sites on the layout associated with at least one subset of the layout design rules is identified. A metrology tag associated with each of the metrology sites is generated. At least one metrology recipe for determining a characteristic of the integrated circuit device is generated based on the metrology tags. Metrology data is collected using the at least one metrology recipe. A selected layout design rule in the at least one subset is modified based on the metrology data.

Abstract: The present invention provides a method and apparatus for integrating multiple sample plans. The method includes receiving a first wafer state data set from an in situ wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool and receiving a second wafer state data set from an ex situ wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool. The method also includes forming a third wafer state data set using the first and second wafer state data sets and determining the at least one characteristic of the at least one wafer based upon the third wafer state data set.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.

Abstract: A method includes determining at least a first characteristic of a device during a first test insertion and storing the first characteristic. The device is identified during a second test insertion. The first characteristic is retrieved responsive to the identification of the device. A test program for the second insertion is configured based on the first characteristic. The configured test program is executed to test the device during the second test insertion.

Abstract: A method includes collecting trace data associated with a plurality of device testers. Tester health metrics are generated for each of the device testers. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric. A method includes collecting trace data associated with a plurality of device testers. The trace data for each of the device testers is compared to a reference trace data set to generate tester health metrics for each of the device testers based on the difference therebetween. The tester health metrics are analyzed to identify a selected tester health metric that diverges from the plurality of tester health metrics. A corrective action is initiated for the tester associated with the selected tester health metric.

Abstract: A method includes defining a hierarchy of test routines in a test program for testing integrated circuit devices. A first device is tested at a first screening level in the hierarchy. The first device is tested at a second detailed level in the hierarchy responsive to the first device failing the testing at the first screening level.

Abstract: A method includes receiving a first set of parameters associated with a subset of a plurality of die on a wafer. A die health metric is determined for at least a portion of the plurality of die based on the first set of parameters. The die health metric includes at least one process component associated with the fabrication of the die and at least one performance component associated with an electrical performance characteristic of the die. At least one of the die is tested. A protocol of the testing is determined based on the associated die health metric.

Abstract: A method includes acquiring metrology data associated with a process. Bias information associated with the process is determined. The metrology data is adjusted based on the bias information to generate bias-adjusted metrology data. The bias-adjusted metrology data is filtered to identify and reject outlier data. The process is controlled based on the metrology data remaining after the rejection of the outlier data.

Abstract: The present invention provides a method and apparatus for determining a root cause of a fault. The method includes detecting at least one fault associated with at least one first wafer processed according to a first processing context and processing at least one second wafer according to at least one second processing context. The second processing context is different than the first processing context. The method also includes determining a root cause associated with the fault based on the first processed wafer and the second processed wafer.