Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: Disclosed is a pulsed sense amplifier approach for resolving data on a bit line. A chip is provided which comprises a sense amplifier coupled to first and second DRAM bitlines; and a circuit having a trigger node coupled to the sense amp to transition it from a first state to a second state to trigger the sense amp, the circuit having an element to impede the transition once it is initiated. A chip is described which comprises: a DRAM array having a plurality of bitlines; sense amplifiers to resolve data on the bit lines, and a circuit to slow down resolution of the data by the sense amps after they have been triggered to resolve the data.

Abstract: Disclosed is a pulsed sense amplifier approach for resolving data on a bit line.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.

Abstract: Adaptive and dynamic stability enhancement for memories is described. In one example, the enhancement includes a plurality of sensors each located near a plurality of memory cells to provide a sensor voltage, a controller to receive the sensor voltage and provide a control signal based thereon, and a read/write assist circuit coupled to the controller to adjust a parameter applied to reading from and writing to a memory cell of the plurality of memory cells in response to the control signal.

Abstract: A 6F2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy word lines. The dummy word lines are fabricated from a metal with a work function favoring p-channel devices.

Abstract: Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.

Abstract: A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

Abstract: Adaptive and dynamic stability enhancement for memories is described. In one example, the enhancement includes a plurality of sensors each located near a plurality of memory cells to provide a sensor voltage, a controller to receive the sensor voltage and provide a control signal based thereon, and a read/write assist circuit coupled to the controller to adjust a parameter applied to reading from and writing to a memory cell of the plurality of memory cells in response to the control signal.

Abstract: A tamper resistant fuse design is generally presented. In this regard, an apparatus is introduced comprising a plurality of fuses in an integrated circuit device to store values and a plurality of resistors in parallel to the fuses, wherein each fuse includes a parallel resistor to provide a potential dissipation path around the fuse. Other embodiments are also described and claimed.

Abstract: Multi-hit errors in a processor cache are detected by a multi-hit detection circuit coupled to the hit lines of the cache. The multi-hit detection circuit compares pairs of hit signals on the hit lines to determine if any two hit signals both indicate a hit. If multiple hits are detected, an error flag indicating the occurrence of multiple hits is generated.

Abstract: In one embodiment, a wordline decoder provides access to cache memory locations when addresses are bypassed directly from arithmetic circuitry in redundant form. The wordline decoder is also designed to provide access to cache memory locations when addresses are received from registers in an unsigned binary form. The combined functionality is provided in a pre-decode circuit by selectively replacing one of a plurality of redundant bit vectors with a constant bit vector when redundant addressing is not enabled.

Abstract: According to one embodiment, an integrated circuit is disclosed. The integrated circuit includes a plurality of circuit blocks. Each circuit block includes a voltage differentiator that generates a local supply for the circuit block.

Abstract: According to one embodiment, an integrated circuit is disclosed. The integrated circuit includes a plurality of circuit blocks. Each circuit block includes a voltage differentiator that generates a local supply for the circuit block.

Abstract: For one embodiment of the present invention, a processor may include one or more integrated voltage regulators powered by an external voltage regulator and generating one or more local supply voltages for the processor. The one or more local supply voltages may be set to allow one or more circuits powered by the local supply voltage(s) to meet a timing requirement. The local supply voltage(s) may be adjusted by the processor in accordance with a power management policy.

Abstract: A novel buffer design including a differential driver circuit provides an improved overall performance to a microprocessor by reducing the number of cycles required by the microprocessor to access data from a cache memory during a split cache line access. In one embodiment of the present invention, when a request to access data from a cache memory comes from a microprocessor, during a first cycle, a first sense amplifier coupled to the cache memory senses a first cache line from the cache memory. Then a first input driver circuit coupled to the first sense amplifier receives the sensed first cache line and stores the first cache line in a split buffer. Then the first sense amplifier senses a second cache line from the cache memory. Then a second sense amplifier coupled to the split buffer senses the stored first cache line from the split buffer.

Abstract: A novel buffer design including a differential driver circuit provides an improved overall performance to a microprocessor by reducing the number of cycles required by the microprocessor to access data from a cache memory during a split cache line access. In one embodiment of the present invention, when a request to access data from a cache memory comes from a microprocessor, during a first cycle, a first sense amplifier coupled to the cache memory senses a first cache line from the cache memory. Then a first input driver circuit coupled to the first sense amplifier receives the sensed first cache line and stores the first cache line in a split buffer. Then the first sense amplifier senses a second cache line from the cache memory. Then a second sense amplifier coupled to the split buffer senses the stored first cache line from the split buffer.

Abstract: In an integrated circuit, a low voltage swing logic communication bus has N+2 data wires for N data signals. Each of the N data signals is carried on its own wire. The communication bus includes two other reference signals.