Patents by Inventor Ki-Hwan Kim

Ki-Hwan Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10784376
    Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: September 22, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki Hwan Kim, Gigwan Park, Junggun You, DongSuk Shin, Jin-Wook Kim
  • Patent number: 10782283
    Abstract: According to the present disclosure, a method of calculating a formation time of a perimeter stain is performed by a device for calculating a formation time of a perimeter stain, and includes obtaining a captured image of an analysis target by using a camera, extracting an image of a perimeter stain included in the analysis target, by analyzing the obtained captured image, calculating a major axis length and a width of the perimeter stain, estimating a formation time of the perimeter stain by using the major axis length and the width of the perimeter stain, and outputting the image of the perimeter stain and the formation time of the perimeter stain.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: September 22, 2020
    Assignee: Republic of Korea (National Forensic Service Director Ministry of Public Administration and Security)
    Inventors: Nam Kyu Park, Jae Mo Goh, Jin Pyo Kim, Young Il Seo, Eun Ah Joo, Je Hyun Lee, Sang Yoon Lee, Dong A Lim, Ki Hwan Kim
  • Publication number: 20200290311
    Abstract: A decoration element including: a color developing layer including a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on a surface of the color developing layer. The substrate comprises a pattern layer, and the light absorbing layer comprises an aluminum oxynitride (AlaObNc).
    Type: Application
    Filed: December 14, 2018
    Publication date: September 17, 2020
    Inventors: Yong Chan Kim, Ki Hwan Kim, Nansra Heo, Jeong Woo Shon, Jin Suk Song, Pilsung Jo
  • Publication number: 20200255723
    Abstract: A conductive laminate and an electrochromic device including the conductive laminate are disclosed. The conductive laminate includes a metal oxynitride layer, a metal oxide layer, and a conductive layer. The metal oxynitride layer, the metal oxide layer or both may comprise monovalent cations. The metal oxynitride layer may be represented by MoaTibOxNy where a>0, b>0, x>0, y>0, 0.5<a/b<4.0, and 0.005<y/x<0.02. The metal oxide layer may comprise a reducing electrochromic material or an oxidizing electrochromic material. The electroconductive laminate and the electrochromic device have excellent durability, excellent color-switching speed, and can stepwise control optical properties.
    Type: Application
    Filed: April 23, 2018
    Publication date: August 13, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Yong Chan KIM, Song Ho JANG, Ki Hwan KIM, Pil Sung JO
  • Patent number: 10725332
    Abstract: The present invention relates to a display device.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: July 28, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Ilha Lee, Jin Hyong Lim, Ki-Hwan Kim
  • Publication number: 20200220015
    Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.
    Type: Application
    Filed: October 10, 2019
    Publication date: July 9, 2020
    Inventors: Sung Uk JANG, Ki Hwan KIM, Su Jin JUNG, Bong Soo KIM, Young Dae CHO
  • Publication number: 20200219976
    Abstract: A semiconductor device including an active fin that protrudes from a substrate and forms a plurality of recess regions spaced apart from each other, a gate pattern between the plurality of recess regions that covers a lateral surface and a top surface of the active fin, a plurality of source/drain patterns in the plurality of recess regions, and a diffusion reduction region adjacent to each of a plurality of bottoms of the plurality of recess regions and each of a plurality of sidewalls of the plurality of recess regions, the diffusion reduction region including a dopant having a lower diffusion coefficient than phosphorus (P).
    Type: Application
    Filed: October 29, 2019
    Publication date: July 9, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ki Hwan KIM, Sunguk Jang, Pankwi Park, Sangmoon Lee, Sujin Jung
  • Publication number: 20200220018
    Abstract: A semiconductor device includes an active region extending in a first direction on a substrate, channel layers on the active region and spaced apart vertically, a gate structure intersecting the active region and the channel layers, the gate structure extending in a second direction and surrounding the channel layers, and a source/drain region on the active region at a side of the gate structure, the source/drain region contacting the channel layers, the source/drain region including first epitaxial layers having a first composition and including first layers on side surfaces of the channel layers and a second layer on the active region at a lower end of the source/drain region, and a second epitaxial layer having a second composition different from the first composition, the second epitaxial layer being between the first epitaxial layers in the first direction and being between the first epitaxial layers vertically in a third direction.
    Type: Application
    Filed: December 10, 2019
    Publication date: July 9, 2020
    Inventors: Sung Uk JANG, Young Dae CHO, Ki Hwan KIM, Su Jin JUNG
  • Publication number: 20200194235
    Abstract: An apparatus for manufacturing a semiconductor device includes: a process chamber including a plasma processing space; and a substrate supporter arranged in the process chamber and configured to support a substrate, wherein the substrate supporter includes: a base including a plurality of lift pin holes, each configured to accommodate a lift pin; and a seal band having a ring shape and protruding from the base, the seal band having an inner diameter that is less than a pitch circle diameter of the plurality of lift pin holes.
    Type: Application
    Filed: June 24, 2019
    Publication date: June 18, 2020
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ki-hwan KIM, Yeon-tae KIM, Kee-soo PARK, Pan-kwi PARK, Jin-ah LEE, Chang-yun LEE, Sung-keun LIM, Min-ho CHOI, Eun-sok CHOI
  • Publication number: 20200166819
    Abstract: An electrochromic film and an electrochromic device including the electrochromic film are disclosed. The electrochromic film includes an electrochromic layer and a passivation layer on one side of the electrochromic layer. The coloration level of the electrochromic film is different from the coloration level of the passivation layer. The film may change optical properties as a result of electrochromism according to an electrochemical reaction. The electrochromic film and the electrochromic device have improved electrochromism, excellent durability, excellent color-switching speed, and stepwise control of optical properties.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 28, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Yong Chan KIM, Ki Hwan KIM
  • Publication number: 20200166818
    Abstract: A light-transmitting film and a device including the light-transmitting film are disclosed. The light-transmitting film includes an oxynitride containing two or more metals selected from Ti, Nb, Mo, Ta and W, and having light transmittance of 60% or more. The oxynitride may be represented by Formula 1, which is MoaTibOxNy where a>0, b>0, x>0, y>0, 0.5<a/b<4.0, and 0.005<y/x<0.02. The film has a light transmission characteristic, is capable of reversible color-switching depending on the applied voltage, and has excellent durability within a driving voltage range in which the film changes its color.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 28, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Yong Chan KIM, Ki Hwan KIM
  • Publication number: 20200159080
    Abstract: An electrochromic device having a conductive layer having reflectiveness and light absorption characteristics simultaneously. The device is capable of realizing various esthetic senses, color senses or stereoscopic color patterns, and at the same time has excellent durability.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 21, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Yong Chan KIM, Ki Hwan KIM, Pil Sung JO
  • Patent number: 10654248
    Abstract: The present invention provides a conductive structure and an electronic device comprising same. The conductive structure comprises a first hafnium oxide layer, a metal layer, a second hafnium oxide layer and satisfies mathematical formula 1.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: May 19, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Sujin Kim, Yong Chan Kim, Ki-Hwan Kim
  • Publication number: 20200147924
    Abstract: The present disclosure relates to a decoration element comprising a light reflective layer; and a light absorbing layer provided on the light reflective layer, wherein the light reflective layer has surface resistance of 20 ohm/square or greater.
    Type: Application
    Filed: June 27, 2018
    Publication date: May 14, 2020
    Inventors: Yong Chan KIM, Jeong Woo SHON, Pilsung JO, Ki Hwan KIM, Song Ho JANG
  • Publication number: 20200150505
    Abstract: An electrochromic device including an electrode layer, an electrochromic layer and a conductive band having a closed ring shape. The electrochromic device having the above structure has excellent color-switching speeds and electrochromic uniformity.
    Type: Application
    Filed: April 23, 2018
    Publication date: May 14, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Yong Chan KIM, Ki Hwan KIM, Pil Sung JO
  • Patent number: 10647089
    Abstract: The present specification provides a conductive structure body and an electronic device comprising the same.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: May 12, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Sujin Kim, Pumsuk Park, Yong Chan Kim, Ki-Hwan Kim
  • Patent number: 10640610
    Abstract: The present invention relates to an organozinc-supported catalyst, a method for producing the same, and a method for preparing a polyalkylene carbonate resin using the catalyst. The organozinc-supported catalyst provided by the present invention includes a zinc dicarboxylate-based catalyst supported on a zinc compound layer formed on at least a portion of a support surface, and can be used repeatedly or continuously while exhibiting improved selectivity in the polymerization process for preparing a polyalkylene carbonate resin.
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: May 5, 2020
    Assignee: LG CHEM LTD.
    Inventors: Jun Wye Lee, Il Ha Lee, Seung Young Park, Ki-Hwan Kim, Sung-Kyoung Kim
  • Publication number: 20200127185
    Abstract: A thermoelectric module including at least a first and a second thermoelectric element comprising a thermoelectric semiconductor; an electrode connecting the first and second thermoelectric elements; and at least a first and a second joining layer, the first joining layer positioned between the first thermoelectric element and the electrode, and the second joining layer positioned between the second thermoelectric element and the electrode; and at least a first and a second barrier layer including an alloy including Cu, Mo and Ti, the first barrier layer positioned between the first thermoelectric element and the first joining layer, and the second barrier layer positioned between the second thermoelectric element and the second joining layer.
    Type: Application
    Filed: December 26, 2017
    Publication date: April 23, 2020
    Applicant: LG CHEM, LTD.
    Inventors: Su Jin KIM, Il Ha LEE, Pum Suk PARK, Hyungju OH, Dong Sik KIM, Byung Kyu LIM, Ki Hwan KIM, Cheol Hee PARK
  • Publication number: 20200114621
    Abstract: The present disclosure relates to a decoration element comprising a light reflective layer; and a light absorbing layer provided on the light reflective layer, wherein the light reflective layer has surface resistance of 20 ohm/square or less.
    Type: Application
    Filed: June 27, 2018
    Publication date: April 16, 2020
    Inventors: Yong Chan KIM, Ki Hwan KIM, Jeong Woo SHON, Song Ho JANG, Pilsung JO, Nansra HEO
  • Patent number: 10622641
    Abstract: The present disclosure relates to a negative electrode for a secondary battery and a manufacturing method thereof, the negative electrode including a negative electrode current collector and a lithium metal. The present disclosure provides a negative electrode for a secondary battery including a negative electrode current collector; a lithium metal layer having a fine pattern formed on the negative electrode collector; and a protective layer formed along the surface of the lithium metal layer having the fine pattern, and a method for forming a lithium metal layer having a fine pattern formed thereon and the protective layer. In the negative electrode for a secondary battery according to the present disclosure, effective current density may be reduced and battery capacity may be maximized by forming a fine pattern on a surface of a lithium metal included in a negative electrode to increase an electrode specific surface area.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: April 14, 2020
    Assignee: LG CHEM, LTD.
    Inventors: Sang Wook Woo, Jeong Woo Shon, Oh Byong Chae, Hee Won Choi, Eun Kyung Kim, Ki Hwan Kim