Abstract: A systems and methods for tracking a position of an electrode. The system may include: a notching controller configured to store pitch information of a unit electrode and to acquire electrode coordinate information of the electrode in a roll-to-roll state during a notching process and a cell identification (ID) of the unit electrode; a calculator configured to calculate coordinates of the cell ID from the pitch information and the cell ID; a roll map generator configured to generate a roll map based on the electrode coordinate information transmitted from the notching controller; and a mapping part configured to compare the coordinates of the roll map with the coordinates of the cell ID to derive an electrode position of the electrode during the electrode manufacturing process from which the unit electrode originates.

Abstract: The present disclosure relates to a method for manufacturing a decoration element, the method including depositing a light reflective layer having a structure of two or more islands separated from each other on one surface of a light absorbing layer; and dry etching the light absorbing layer using the island as a mask, wherein a resistance value of the decoration element after the dry etching of the light absorbing layer increases by two times or more compared to before the dry etching of the light absorbing layer.

Abstract: A negative electrode for a lithium secondary battery including a negative electrode current collector; and a negative electrode active material layer formed on the negative electrode current collector, wherein the negative electrode active material layer includes graphite and silicon oxide, and lithium is incorporated in the negative electrode active material layer, and a method for preparing the same.

Abstract: A an electrode having an improved safety,including: a current collector including a main body and an electrode tab formed at one side of the main body; a conductive coating layer which is formed on at least one surface of the current collector and includes a conducting polymer of which resistance increases when a temperature rises; and an electrode mixture layer which is formed on the conductive coating layer. Herein, the conductive coating layer is formed on a region including both the main body and the electrode tab.

Abstract: The present disclosure relates to a decoration member comprising a color developing layer comprising a light reflective layer and a light absorbing layer provided on the light reflective layer; and a substrate provided on one surface of the color developing layer, wherein the light absorbing layer comprises a molybdenum-titanium oxide (MoaTibOx).

Abstract: A method of preparing a carbon fiber including: preparing a precursor fiber for preparing a carbon fiber; and stabilizing the precursor fiber. The stabilization of the precursor fiber includes a first stabilization phase, a second stabilization phase, a third stabilization phase, and a fourth stabilization phase, which are set at four different temperatures between a temperature at which heat starts to be generated from the stabilization reaction of the precursor fiber and a temperature at which the generation of heat is maximized. Ozone gas is input while at least one phase of the third stabilization phase and the fourth stabilization phase is carried out.

Abstract: A decoration element is described. The decoration element includes a light reflective layer; a light absorbing layer provided on the light reflective layer; and a color developing layer comprising a color film, wherein the color developing layer is provided: on a surface of the light reflective layer opposite to a surface of the light reflective layer facing the light absorbing layer; between the light reflective layer and the light absorbing layer; or on a surface of the light absorbing layer opposite to a surface of the light absorbing layer facing the light reflective layer.

Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).

Abstract: This specification relates to a decoration member including: a substrate; and a decoration layer provided on the substrate in which there are one or more combinations of viewing angles ? and ? in which a contrast parameter Cn represented by Equation 1 is 0.1 or more.

Abstract: The present specification relates to a conductive structure body, a method for manufacturing the same, and an electrode and an electronic device including the conductive structure body.

Abstract: A method for predicting a risk of occurrence of a lesion is provided, which is performed by one or more processors and includes acquiring a medical image of a subject, using a machine learning model, predicting a possibility of occurrence of a lesion of the subject from acquired medical image, and outputting a prediction result, in which the machine learning model may be a model trained with a plurality of training medical images and a risk of occurrence of the lesion associated with each training medical image.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the gate electrode; and a source/drain region in the source/drain trench, The source/drain region includes: a first layer provided along a sidewall and a bottom surface of the source/drain trench, the first layer having a first n-type impurity doped therein; a second layer on the first layer in the source/drain trench, the second layer having germanium (Ge) doped therein; and a third layer filling a remaining portion of the source/drain trench on the second layer, the third layer having a second n-type impurity doped therein.

Abstract: This specification relates to a decoration member including: a substrate; a pattern layer comprising two or more unit pattern provided on one surface of the substrate; and an inorganic layer formed on the pattern layer, in which the inorganic layer includes a region in which a thickness t(x) of the inorganic layer formed on each unit pattern increases in a direction x in which the unit patterns are arranged.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).

Abstract: Disclosed is an apparatus for measuring the distribution of radiation dose emitted from a brachytherapy insertion tool, the apparatus including a housing having defined therein a measurement space in which the brachytherapy insertion tool is located, a fluorescent member disposed at the housing, the fluorescent member being configured to react with radiation emitted to the measurement space and to emit light, a camera disposed in the housing, and a cover coupled to one surface of the housing, the cover being configured to cover the fluorescent member. The portion of the fluorescent member to which radiation from a radiation source of the brachytherapy insertion tool is applied reacts with the radiation and generates light, brightness of the light varies depending on distribution of the radiation, and the position at which the light is bright is calculated to measure the direction in which the brachytherapy insertion tool has no shielding.

Abstract: The present application relates to a decoration member including a substrate layer having a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

Abstract: A semiconductor device includes first and second active patterns protruding upward from a substrate, a gate electrode crossing the first and second active patterns and extending in a first direction, a first source/drain region on the first active pattern and on at least one side of the gate electrode, and a second source/drain region on the second active pattern and on at least one side of the gate electrode. The first and second source/drain regions have a conductivity type different from each other, and the second source/drain region has a bottom surface in contact with a top surface of the second active pattern and at a lower level than that of a bottom surface of the first source/drain region in contact with a top surface of the first active pattern. The first active pattern has a first width smaller than a second width of the second active pattern.