Abstract: A water purifier includes: a filter module for providing purified water by filtering raw water; a fitting valve module detachably fastened to the filter module to provide at least one of a flow path for a flow of raw water supplied to the filter module and a flow path for a flow of the purified water discharged from the filter module; and a frame including a valve support for movably supporting the fitting valve module to be movable. The fitting valve module is selectively placed in a separated state in which the fitting valve module is separated from the filter module by moving in a direction away from the filter module, or a coupled state in which the fitting valve module coupled to the filter module by moving toward the filter module.

Abstract: A method for predicting a risk of occurrence of a lesion is provided, which is performed by one or more processors and includes acquiring a medical image of a subject, using a machine learning model, predicting a possibility of occurrence of a lesion of the subject from acquired medical image, and outputting a prediction result, in which the machine learning model may be a model trained with a plurality of training medical images and a risk of occurrence of the lesion associated with each training medical image.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: A method for evaluating physical properties of a melt-blown plastic resin, and, more specifically, to a novel method for evaluating physical properties are provided. When a particular plastic resin is processed by a melt-blown process, a stretching diameter value after the process of the plastic resin can be accurately derived from a physical property value measured using a specimen of the resin.

Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in on a substrate; nanosheets stacked on the active pattern; a gate electrode on the active pattern and surrounding the nanosheets; a source/drain trench on the active pattern adjacent the gate electrode; and a source/drain region in the source/drain trench, The source/drain region includes: a first layer provided along a sidewall and a bottom surface of the source/drain trench, the first layer having a first n-type impurity doped therein; a second layer on the first layer in the source/drain trench, the second layer having germanium (Ge) doped therein; and a third layer filling a remaining portion of the source/drain trench on the second layer, the third layer having a second n-type impurity doped therein.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: This specification relates to a decoration member including: a substrate; a pattern layer comprising two or more unit pattern provided on one surface of the substrate; and an inorganic layer formed on the pattern layer, in which the inorganic layer includes a region in which a thickness t(x) of the inorganic layer formed on each unit pattern increases in a direction x in which the unit patterns are arranged.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: The present disclosure relates to a decoration member comprising: a color expression layer comprising a light reflection layer and a light absorption layer provided on the light reflection layer; and a substrate provided on one surface of the color expression layer, in which the light absorption layer comprises a copper nickel oxide (CuaNibOx).

Abstract: Disclosed is an apparatus for measuring the distribution of radiation dose emitted from a brachytherapy insertion tool, the apparatus including a housing having defined therein a measurement space in which the brachytherapy insertion tool is located, a fluorescent member disposed at the housing, the fluorescent member being configured to react with radiation emitted to the measurement space and to emit light, a camera disposed in the housing, and a cover coupled to one surface of the housing, the cover being configured to cover the fluorescent member. The portion of the fluorescent member to which radiation from a radiation source of the brachytherapy insertion tool is applied reacts with the radiation and generates light, brightness of the light varies depending on distribution of the radiation, and the position at which the light is bright is calculated to measure the direction in which the brachytherapy insertion tool has no shielding.

Abstract: The present application relates to a decoration member including a substrate layer having a convex structure or a concave structure arranged two-dimensionally, and a method for preparing the decoration member.

Abstract: A semiconductor device includes; a substrate including an active pattern, a channel pattern on the active pattern, the channel pattern including a plurality of spaced apart and vertically stacked semiconductor patterns, a source/drain pattern connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns, the gate electrode including a portion interposed between adjacent ones of the plurality of semiconductor patterns, and an inner spacer interposed between the portion of the gate electrode and the source/drain pattern, wherein the inner spacer is crystalline metal oxide is expressed by a formula (MO), wherein (O) is an oxygen atom, and (M) is a metal atom selected from a group consisting of Mg, Be, and Ga.

Abstract: A semiconductor device is provided. The semiconductor comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a source/drain pattern on the lower pattern and in contact with the plurality of sheet patterns, and a gate structure on opposing sides of the source/drain pattern in a second direction different from the first direction, the gate structure including a gate electrode on the plurality of sheet patterns, wherein the source/drain pattern includes an epitaxial region that comprises a semiconductor material and a cavity region that is inside the epitaxial region and that is surrounded by the semiconductor material.

Abstract: An electrochromic device having a conductive layer having reflectiveness and light absorption characteristics simultaneously. The device is capable of realizing various esthetic senses, color senses or stereoscopic color patterns, and at the same time has excellent durability.

Abstract: A semiconductor device includes a substrate including an active pattern; a source/drain pattern on the active pattern; a gate electrode on the active pattern; and a gate spacer on the source/drain pattern. The source/drain pattern includes a first semiconductor layer on the active pattern and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes a first inner sidewall and second inner sidewall on the second semiconductor layer. A distance between the first and second inner sidewalls of the first semiconductor layer decreases according as positions of two portions of the first semiconductor layer where the distance is measured become closer to the gate spacer decreases.

Abstract: A semiconductor device comprises an active pattern including a lower pattern and a plurality of sheet patterns that are spaced apart from the lower pattern in a first direction, a plurality of gate structures disposed on the lower pattern to be spaced apart from each other in a second direction, each of the gate structures including a gate electrode and gate insulating films, source/drain recesses defined between adjacent gate structures and a source/drain pattern filling the source/drain recesses. Each source/drain pattern may include a first semiconductor liner, which extend along sidewalls and a bottom surface of the source/drain recesses, second semiconductor liners, which are on the first semiconductor liners and extend along the sidewalls and the bottom surface of the source/drain recesses, and a filling semiconductor film, which is on the second semiconductor liners and fills the source/drain recess.

Abstract: An electrode has a current collector and an active material layer, which can provide an electrode capable of ensuring high levels of adhesion force between particles, and adhesion force between the active material layer and the current collector compared with a binder content in the active material layer. An electrochemical element and a secondary battery having the electrode are also provided.

Abstract: A decoration member for a cosmetic container including: a color expression layer having a light reflecting layer and a light absorbing layer provided on the light reflecting layer; and a substrate provided on one surface of the color expression layer.

Abstract: The present application relates to an electrode, a method for manufacturing the electrode, and a secondary battery comprising the electrode. The present application relates to an electrode comprising a current collector, an active material layer, and a thiophene polymer layer formed on the active material layer and can provide an electrode capable of ensuring a higher level of adhesion force between particles and adhesion force between the active material layer and the current collector relative to the binder content in the active material layer. In addition, the present application can provide a method for manufacturing the electrode, and a secondary battery comprising the same.

Abstract: A negative electrode having a carbon-based thin film formed on at least one surface of a lithium metal layer, and a lithium secondary battery including the same. A carbon-based thin film formed on at least one surface of a lithium metal layer blocks side reactions caused by direct contact between the lithium metal layer and an electrolyte as well as increasing a specific surface area of a negative electrode, and thereby suppresses lithium dendrite formation, and by obtaining current density distribution uniformly, enhances cycle performance, reduces an overvoltage to improve electrochemical performance of a lithium secondary battery.