Abstract: A method of forming a contact includes forming an inter-layer dielectric layer to cover a gate formed on a semiconductor substrate; and forming a first hole which passes through the inter-layer dielectric layer to expose the gate, a second hole which exposes an active region of the semiconductor substrate, and a third hole which exposes the semiconductor substrate at a preset depth. Further, the method includes forming a shielding layer on the semiconductor substrate including the bottom and sidewalls of the first hole, the second hole, and the third hole; and removing the shielding layer at the bottom of the first hole and the second hole to expose the gate and the active region. Furthermore, the method includes filling the first hole, the second hole, and the third hole with a conductive material.

Abstract: A method for manufacturing an image sensor includes forming circuitry including a metal line over a semiconductor substrate, forming a photodiode over the metal line, and forming a contact plug in the photodiode such that the contact plug is connected to the metal line. The forming of the contact plug includes performing a first etch process to etch a portion of the photodiode, and performing a second etch process to expose a portion of the metal line by using a byproduct generated in etching, to form a via hole for the contact plug in the photodiode.

Abstract: An image sensor and a method of manufacturing the same. An image sensor may include a first interlayer dielectric layer having a first metal wiring and/or a bonding silicon including impurity regions on and/or over a first interlayer dielectric layer. An image sensor may include a second interlayer dielectric layer formed on and/or over a bonding silicon, and/or a first contact plug connected to a first metal wiring. An image sensor may include a third interlayer dielectric layer on and/or over a second interlayer dielectric layer, a second contact plug connected to a first impurity region and/or a second metal wiring on and/or over a second interlayer dielectric layer. An image sensor may include and a color filter layer and/or a microlens. A dielectric layer may be between a first contact plug and a first impurity region. A dielectric layer may be on and/or over a second interlayer dielectric layer.

Abstract: An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.

Abstract: An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower interconnection and a second lower interconnection over a dielectric of a substrate. The first lower electrode, the photodiode, and the upper electrode may be sequentially formed over the first lower interconnection. The second lower electrode may comprise a passivation layer over the second lower interconnection. The upper interconnection may be formed over the second lower electrode and electrically connected to the upper electrode.

Abstract: An image sensor includes a semiconductor substrate, an interconnection and an interlayer dielectric, an image sensing device, a trench, a buffer layer, a barrier pattern, a via hole, and a metal contact. The semiconductor substrate includes a readout circuitry. The interconnection and an interlayer dielectric layer are formed on and/or over the semiconductor substrate while the interconnection is connected to the readout circuitry. The image sensing device may be formed on and/or over the interlayer dielectric and a trench may be formed in the image sensing device, the trench corresponding to the interconnection. The buffer layer may be formed on a sidewall of the trench. The barrier pattern may be formed on the buffer layer with the via hole penetrating through the image sensing device and the interlayer dielectric under the barrier pattern and exposing the interconnection. The metal contact may be formed in the via hole.

Abstract: A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory gates and then forming a plurality of selective gates on sidewalls of each of the memory gates.

Abstract: A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on the substrate, the ONO layer and the polysilicon gates, and a low temperature oxide layer and polysilicon sidewall spacers on outer side surfaces of the polysilicon gates, except in a region between nearest adjacent polysilicon gates.

Abstract: An image sensor includes a semiconductor substrate, an interconnection and an interlayer dielectric, an image sensing device, a trench, a buffer layer, a barrier pattern, a via hole, and a metal contact. The semiconductor substrate includes a readout circuitry. The interconnection and an interlayer dielectric layer are formed on and/or over the semiconductor substrate while the interconnection is connected to the readout circuitry. The image sensing device may be formed on and/or over the interlayer dielectric and a trench may be formed in the image sensing device, the trench corresponding to the interconnection. The buffer layer may be formed on a sidewall of the trench. The barrier pattern may be formed on the buffer layer with the via hole penetrating through the image sensing device and the interlayer dielectric under the barrier pattern and exposing the interconnection. The metal contact may be formed in the via hole.

Abstract: A flash memory device and a method for fabricating the same are disclosed. The flash memory device includes an ONO layer on a substrate, polysilicon gates on the ONO layer, a gate oxide layer on the substrate, the ONO layer and the polysilicon gates, and a low temperature oxide layer and polysilicon sidewall spacers on outer side surfaces of the polysilicon gates, except in a region between nearest adjacent polysilicon gates.

Abstract: A method of forming a flash memory device includes forming a plurality of memory gates over a semiconductor substrate, forming an oxide film over the uppermost surface and sidewalls of the memory gates and then forming a plurality of selective gates on sidewalls of each of the memory gates.

Abstract: Provided is a method for manufacturing an image sensor. The method includes the following. A color filter layer is formed on a semiconductor substrate having a photodiode and a transistor formed thereon. A planarization layer is formed on the color filter layer. An LTO (Low Temperature Oxide) layer is formed on the planarization layer. A photoresist pattern is formed to correspond to the color filter layer on the LTO layer, and a reflow process is performed. A microlens array is formed by reactive ion etching the photoresist pattern and the LTO layer. A second reflow process may be performed on the photoresist pattern and/or the LTO layer during the reactive ion etching process.

Abstract: An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.

Abstract: A method for manufacturing an image sensor includes forming circuitry including a metal line over a semiconductor substrate, forming a photodiode over the metal line, and forming a contact plug in the photodiode such that the contact plug is connected to the metal line. The forming of the contact plug includes performing a first etch process to etch a portion of the photodiode, and performing a second etch process to expose a portion of the metal line by using a byproduct generated in etching, to form a via hole for the contact plug in the photodiode.

Abstract: An image sensor and a method of manufacturing the same. An image sensor may include a first interlayer dielectric layer having a first metal wiring and/or a bonding silicon including impurity regions on and/or over a first interlayer dielectric layer. An image sensor may include a second interlayer dielectric layer formed on and/or over a bonding silicon, and/or a first contact plug connected to a first metal wiring. An image sensor may include a third interlayer dielectric layer on and/or over a second interlayer dielectric layer, a second contact plug connected to a first impurity region and/or a second metal wiring on and/or over a second interlayer dielectric layer. An image sensor may include and a color filter layer and/or a microlens. A dielectric layer may be between a first contact plug and a first impurity region. A dielectric layer may be on and/or over a second interlayer dielectric layer.

Abstract: A method for forming a fine pattern of a semiconductor device includes forming an insulating layer and an etch layer over a semiconductor substrate, coating a photoresist layer over the etch layer, forming a photoresist pattern by performing a photolithography process for the photoresist layer, forming spacers at sidewalls of the photoresist pattern by performing a primary etching process using the photoresist pattern as a mask, and forming an etch layer pattern and an insulating layer pattern by performing a secondary etching process using the photoresist pattern and the spacers as a mask.

Abstract: A method includes forming an interlayer dielectric layer including a contact plug over a semiconductor substrate, forming a metal layer, a hard mask layer, and an anti-reflection layer over the interlayer dielectric layer, forming a photoresist pattern over the anti-reflection layer, etching the anti-reflection layer in a primary etching process, using the photoresist pattern as an etching mask, to form an anti-reflection pattern, forming a first polymer layer over a surface of the anti-reflection pattern and the photoresist pattern by using polymer generated in the primary etching process, etching the hard mask layer in a secondary etching process, by using the anti-reflection pattern, the photoresist pattern, and the first polymer layer as an etching mask, to form a hard mask, and etching the metal layer in a tertiary etching process, by using the photoresist pattern, the anti-reflection pattern, the first polymer layer, and the hard mask as an etching mask, to form a metal interconnection.

Abstract: The present method for manufacturing a semiconductor device comprises the steps of forming an aluminum wiring layer on a substrate; sequentially forming a hard mask, a polysilicon layer, and a bottom anti-reflective coating over the aluminum wiring layer; etching the polysilicon layer using a photoresist pattern formed over the bottom anti-reflective coating as mask; etching the hard mask to a predetermined thickness; and etching the hard mask to expose the aluminum wiring layer. The method for manufacturing a semiconductor device according to the present invention may prevent byproducts and polymer residue from when patterning the hard mask. As a result, the presently disclosed methods may avoid the need for a conventional cleaning process prior to etching the aluminum wiring layer to form aluminum lines.

Abstract: A method of forming a metal line of an inductor used in a Radio Frequency (RF) device, effectively removes polymer generated during an etching process to form trenches. The method removes the polymer using a radical having a high reactivity with the polymer. The method includes carrying out first main etching to form the trenches, carrying out ashing to remove polymer generated in the first main etching, and carrying out second main etching to form vias on the bottoms of the trenches.

Abstract: An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower interconnection and a second lower interconnection over a dielectric of a substrate. The first lower electrode, the photodiode, and the upper electrode may be sequentially formed over the first lower interconnection. The second lower electrode may comprise a passivation layer over the second lower interconnection. The upper interconnection may be formed over the second lower electrode and electrically connected to the upper electrode.