Abstract: A semiconductor having a metal line and a method of manufacturing a metal line in a semiconductor device is disclosed. In one example embodiment, a method of manufacturing a metal line in a semiconductor device includes various acts. A metal film for a metal line is formed on an interlayer dielectric layer of a semiconductor substrate. A silicon oxide hard mask film is formed on the metal film. A bottom anti-reflection (BARC) layer is formed on the hard mask film. The BARC layer, the hard mask film, and the metal film are selectively dry etched to form a metal line.

Abstract: Manufacturing an inductor includes forming a spiral metal wire on a semiconductor substrate; forming a connection hole exposing a portion of the metal wire by selectively etching a first dielectric film formed to bury the metal wire, and forming a first metal film on the first dielectric film on which the connection hole is formed; forming a second dielectric film on the first metal film; and forming a first photoresist film for forming a second metal wire corresponding to the spiral metal wire on the second dielectric film, and forming the second metal wire by selectively etching the second dielectric film and the first metal film using the first photoresist pattern as an etching mask; wherein the second dielectric film prevents an etching of the top of the second metal wire resulting from the difference in etch rate between the first photoresist pattern and first metal film.

Abstract: A method for forming a micro-lens on a sapphire substrate in an LED process. In the method for forming the micro-lens on the sapphire substrate in the LED process, the ratio of source power and bias power used to generate plasma into a chamber is set to the optimum ratio of 3:1 in order to minimize the burning phenomenon of a photoresist mask caused by plasma having strong potential when a conventional micro-lens is formed. In essence, plasma having low potential energy can be realized in RIE etch used to form the micro-lens on the sapphire substrate, thereby minimizing the burning phenomenon of the photoresist mask. A yield rate can be improved in the LED process.

Abstract: Provided is a method for manufacturing an image sensor. The method includes the following. A color filter layer is formed on a semiconductor substrate having a photodiode and a transistor formed thereon. A planarization layer is formed on the color filter layer. An LTO (Low Temperature Oxide) layer is formed on the planarization layer. A photoresist pattern is formed to correspond to the color filter layer on the LTO layer, and a reflow process is performed. A microlens array is formed by reactive ion etching the photoresist pattern and the LTO layer. A second reflow process may be performed on the photoresist pattern and/or the LTO layer during the reactive ion etching process.

Abstract: Provided is a method for fabricating an image sensor. In the method, a low temperature oxide layer is formed on a color filter layer, and a photoresist pattern is formed on the low temperature oxide layer. Subsequently, a heat treatment is performed on the photoresist pattern to form sacrificial microlenses. The sacrificial microlenses and the low temperature oxide layer are etched to form preliminary microlenses formed the low temperature oxide layer. The preliminary microlenses are etched to form microlenses having a reduced curvature radius in comparison with that of the preliminary microlenses.