Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.

Abstract: The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Abstract: An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.

Abstract: A light emitting device package includes a first frame and a second frame disposed to be spaced apart from each other; a body disposed between the first and second frames and comprising a recess; a first adhesive on the recess; a light emitting device on the first adhesive; a second adhesive disposed between the first and second frames and the light emitting device; and a resin portion disposed to surround the second adhesive and a partial region of the light emitting device.

Abstract: Provided are an image processing system and an image processing method. An image processing method includes: constructing a plurality of grids on an image; extracting features of the image; estimating a grid motion vector of each of the plurality of grids, based on a first motion vector of each of the features; estimating a second motion vector of each feature based on the grid motion vector; and detecting a moving object based on a difference between the first motion vector and the second motion vector.

Abstract: The light emitting device package disclosed in the embodiment includes: first and second frames having first and second through holes; a body disposed between the first and second frames; a light emitting device including a first bonding pad and a second bonding pad; and a conductive part in the first and second through holes. wherein at least one of the first and second bonding pads faces the first and second frames and overlaps with the first and second through holes and includes a contact region contacting the conductive part and a first non-contact non-contacting the conducive part.

Abstract: A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

Abstract: Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

Abstract: Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the n-type GaN layer, a p-type GaN layer on the active layer, a current spreading layer including a transparent conductive metal oxide material on the p-type GaN layer, a plurality of upper current injection electrodes provided on the current spreading layer to be spaced apart from each other, an upper electrode pattern extending to cover the upper current injection electrodes, and an upper electrode pad electrically connected to the upper electrode pattern. The upper electrode pattern may include first and second upper electrode patterns, which are sequentially stacked and are a silver or silver alloy thin layer and a transparent conductive metal oxide thin layer, respectively.

Abstract: Embodiments disclosed are directed to a multilayer electronic component and a method of manufacturing the same. The multilayer electronic component may includ a multilayer body having a plurality of insulating layers and internal coil parts disposed on the insulating layers. The plurality of insulating layers and internal coil parts are stacked. The multilayer electronic component may also include and external electrodes disposed on external surfaces of the multilayer body and connected to the internal coil parts. The internal coil parts include a first metal and a second metal having electrical conductivity higher than that of a first metal is disposed on the internal coil parts and surrounds the internal coil parts.

Abstract: A coil electronic component includes a plurality of coil layers including coil patterns and connection patterns. The coil patterns are disposed between the connection patterns. The connection patterns are at least partially exposed from the coil electronic component. The coil electronic component further includes connection electrodes connecting the connection patterns formed in different coil layers of the plurality of coil layers with each other, and external electrodes connected to the connection electrodes and at least partially enclosing the connection electrodes.

Abstract: A coil electronic component includes: a plurality of coil layers including, respectively, coil patterns and connection patterns disposed outside the coil patterns and forming a stacking structure; conductive vias connecting the coil patterns formed on different levels to each other; and external electrodes electrically connected to the plurality of coil layers. The coil patterns of at least two of the plurality of coil layers may have the same shape and be electrically connected to each other in parallel.

Abstract: A coil electronic component includes: a plurality of stacked coil layers each including coil patterns including anisotropic plating layers; conductive vias connecting the coil patterns formed on different coil layers to each other; and external electrodes electrically connected to the plurality of coil layers.

Abstract: Provided is a steel for pipes for use in applications such as oil or gas extraction. Particularly, there are provided a steel for pipes having high fatigue resistance, a method of manufacturing the steel, and a welded steel pipe obtained using the steel.

Abstract: Disclosed herein is an air conditioner in which flow noise of a refrigerant is reduced. An air conditioner includes a compressor configured to compress a refrigerant, an outdoor heat exchanger in which the refrigerant exchanges heat with outside air, an expansion device configured to expand the refrigerant, an indoor heat exchanger in which the refrigerant exchanges heat with indoor air, and a muffler configured to reduce flow noise of the refrigerant flowing into the indoor heat exchanger, wherein the muffler includes a shell including a refrigerant inlet and a refrigerant outlet, a first baffle disposed at one side of an inner part of the shell and including a plurality of first holes, a plurality of pipes inserted into the plurality of first holes and serving as passages through which the refrigerant moves, and a second baffle disposed at the other side of the inner part of the shell and including a plurality of second holes through which the refrigerant passing through the pipe passes.

Abstract: A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

Abstract: A vertical light-emitting diode device and a method of fabricating the same are provided. The device may include a conductive substrate serving as a p electrode, a p-type GaN layer provided on the conductive substrate, an active layer provided on the p-type GaN layer, an n-type GaN layer provided on the active layer, an n electrode pattern provided on the n-type GaN layer, a metal oxide structure filling a plurality of holes formed in the n-type GaN layer, and a seed layer provided on bottom surfaces of the holes and used to as a seed in a crystal growth process of the metal oxide structure.

Abstract: Provided are a lateral light emitting diode device and a method for fabricating the same. The lateral light emitting diode device includes a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer, a plurality of holes being formed in the p-type GaN layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a seed layer disposed on bottom surfaces of the plurality of holes; metal oxide structures grown on the seed layer in a crystalline state to fill the plurality of holes; and an n-electrode disposed on the n-type GaN layer exposed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer.

Abstract: Provided is a GaN light-emitting diode (LED) device. The LED device may include a substrate, an n-type GaN layer on the substrate, an active layer on the n-type GaN layer, a p-type GaN layer on the active layer, a current spreading layer including a transparent conductive metal oxide material on the p-type GaN layer, a plurality of upper current injection electrodes provided on the current spreading layer to be spaced apart from each other, an upper electrode pattern extending to cover the upper current injection electrodes, and an upper electrode pad electrically connected to the upper electrode pattern. The upper electrode pattern may include first and second upper electrode patterns, which are sequentially stacked and are a silver or silver alloy thin layer and a transparent conductive metal oxide thin layer, respectively.

Abstract: Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.