Abstract: The present disclosure relates to a method of etching an atomic layer, that is capable of simultaneously removing an upper surface and a side surface of an etch subject material layer by heating with a light source of a lamp when removing the atomic layer, thereby easily reducing the planar size even in the case of patterns in the scale of several nanometers.

Abstract: A display apparatus may include a light source module that may include a substrate having a plurality of chip mounting areas of which each has a connection pad disposed therein, and a plurality of semiconductor light emitting devices electrically coupled to separate connection pads. The display apparatus may include a black matrix on the substrate and having a plurality of holes corresponding to the pattern of chip mounting areas. The semiconductor light emitting devices may be in separate, respective holes to be electrically coupled to separate connection pads. The display apparatus may include unit pixels, where each unit pixel includes multiple adjacent semiconductor light emitting devices. The semiconductor light emitting devices may be removably coupled to separate connection pads, and a semiconductor light emitting device may be interchangeably swapped from a connection pad.

Abstract: An LED includes a semiconductor stack including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first and second conductive semiconductor layers, and trenches formed passing through the second conductive semiconductor layer and the active layer to expose portions of the first conductive semiconductor layer disposed underneath the active layer; a first electrode finger disposed along the trenches and electrically connected to the portions of the first conductive semiconductor layer exposed within the trenches; an insulating layer on which the first electrode finger is positioned and which is disposed on the second conductive semiconductor layer and internal side walls of the trenches; and a second electrode finger electrically connected to the second conductive semiconductor layer.

Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Abstract: A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction.

Abstract: Provided are a photoelectrode including a zinc oxide hemisphere, a method of fabricating the same, and a dye-sensitized solar cell using the same. The photoelectrode includes a conductive substrate, a zinc oxide hemisphere disposed on the conductive substrate, and a porous metal oxide layer covering the zinc oxide hemisphere. Light scattering effects of photoelectrodes can be increased, and recombination losses of electrons can be minimized to improve photovoltaic properties.

Abstract: A resin composition and a printed circuit board comprising the same, include an epoxy resin, and a teflon resin including nano-silica on a surface thereof.

Abstract: A resin composition for a printed circuit board includes an epoxy resin; an active ester hardening agent configured to react with the epoxy resin; and a cyanate ester hardening agent.

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, microstructures regularly arranged on the first conductivity-type semiconductor layer around the light-emitting structure, and a gradient refractive layer on at least a portion of the microstructures, the gradient refractive layer having a lower refractive index than the first conductivity-type semiconductor layer.

Abstract: Disclosed are a DNA aptamer specifically binding to the Her2 (ERBB2) receptor involved in the onset of breast cancer, a composition for the suppression of cancer metastasis comprising the same as an active ingredient, and a composition for the diagnosis of cancer comprising the same as an active ingredient. Due to its binding mechanism being different from that of the conventional antibody, the aptamer can be effectively used for suppressing cancer metastasis and diagnosing cancer.

Abstract: A system and method for managing energy of an electric vehicle are provided to calculate a necessary amount of energy based on battery characteristics and a user's schedule, and control charging and discharging of the electric vehicle using power information provided by a smart grid. The system includes a cloud server configured to collect a schedule from a user and store and generate the user's schedule information, an energy management device configured to calculate necessary energy based on the received schedule information of the user, set charging information based on power network state information received from a power supplier and the calculated necessary energy, generate a charging request signal based on the set charging information, and store electric energy, and a charging unit configured to transfer the electric energy to the energy management device based on the received charging request signal.

Abstract: A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

Abstract: The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.

Abstract: Improved G-rich oligonucleotide (GRO) aptamers specific to nucleolin, a method of preparing the aptamers, and a use of the aptamers for diagnosing and/or treating a nucleolin-associated disease, are provided.

Abstract: Improved G-rich oligonucleotide (GRO) aptamers specific to nucleolin, a method of preparing the aptamers, and a use of the aptamers for diagnosing and/or treating a nucleolin-associated disease, are provided.

Abstract: A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and second conductivity type semiconductor layers and an active layer interposed therebetween. The first and second electrodes are electrically connected to the first and second conductivity type semiconductor layers. The second electrode includes a current blocking layer, a reflective part disposed on the current blocking layer, a transparent electrode layer disposed on the second conductivity type semiconductor layer, a pad electrode part disposed within a region of the current blocking layer, and at least one finger electrode part disposed at least in part on the transparent electrode layer. The transparent electrode layer can be spaced apart from the reflective part, and have an opening surrounding the reflective part. In some examples, the transparent electrode layer can further be spaced apart from the current blocking layer.

Abstract: Disclosed herein is a surface-modified inorganic filler including an alkyl group and an amine group sequentially introduced on a surface thereof, wherein the alkyl group and the amine group are introduced on the surface of the inorganic filler in a weight ratio between the alkyl group and the amine group of 0.5:9.5 to 4:6. An epoxy resin composition including the surface-treated inorganic filler according to the present invention may have low dielectric loss rate and low coefficient of thermal expansion properties.

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract: A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.

Abstract: Disclosed herein are an insulating film for a printed circuit board, a resin coated copper (RCC), a flexible copper clad laminate (FCCL), and a printed circuit board manufactured by using the same. More specifically, the RCC, the FCCL, and the printed circuit board manufactured by using the insulating film for the printed circuit board according to the preferred embodiment of the present invention, the insulating film including an insulating layer, and a primer layer formed on one surface of the insulating layer and including a benzocyclobutene (BCB)-based resin, may have a low coefficient of thermal expansion and high peel strength.