Abstract: One aspect of the present disclosure is a pharmaceutical composition which includes (R)—N-[1-(3,5-difluoro-4-methansulfonylamino-phenyl)-ethyl]-3-(2-propyl-6-trifluoromethyl-pyridin-3-yl)-acrylamide as a first component and a cellulosic polymer as a second component, wherein the composition of one aspect of the present disclosure has a formulation characteristic in which crystal formation is delayed for a long time.

Abstract: An electronic component includes a body, a pair of external electrodes, disposed on both ends of the body in a first direction, respectively, containing at least one of copper and nickel, while not containing a noble metal, a pair of metal frames connected to the pair of external electrodes, respectively, and a pair of conductive bonding layers, disposed between the external electrode and the metal frame, respectively, containing the same metal component as the external electrode.

Abstract: Provided is a 3D printer having a residual powder removal device, including: a cabinet configured to form an exterior and protect a plurality of parts embedded therein, a chamber configured to form a printing space where a 3D part is formed by being irradiated with a laser from a laser irradiator inside the cabinet, a concentration measurer configured to measure a concentration of metal powder scattered inside the chamber, a powder transfer unit configured to transfer the metal powder from inside the chamber, and a residual powder removal device configured to spray an inert gas into the chamber to forcibly scatter cohered metal powder, discharge the metal powder scattered inside the chamber to the outside along with the inert gas, and cause the metal powder to pass through a filter assembly so that the metal powder is filtered and the residual metal powder is removed from inside the chamber.

Abstract: Provided is an STL file coupling method including: analyzing models of STL files to define surfaces of the models as to triangular pixels, and selecting triangles to be coupled among the triangular pixels; determining directionality of a first triangle of a first file and a second triangle of a second file in terms of a clockwise direction or a counterclockwise direction; calculating first and second normal vectors from the first and second triangles, respectively; calculating a cross angle between the first and second normal vectors; arranging the first and second triangles to face each other in parallel; calculating a first central point of the first triangle and a second central point of the second triangle to calculate a distance between the first and second central points; and moving the second triangle with respect to the first triangle by the calculated distance to couple the first triangle to the second triangle.

Abstract: A multi-mode filter for realizing wide band using capacitive coupling and inductive coupling and capable of tuning coupling value is disclosed. The multi-mode filter includes a housing; a first cavity and a second cavity formed in the housing; a first resonator located in the first cavity, a second resonator located in the second cavity, a wall configured to separate the first cavity from the second cavity; and a first coupling element, wherein a groove is formed between the housing and the wall, the first coupling element is inserted in the groove in crossing direction to the wall, one part of the first coupling element is disposed in the first cavity, another part of the first coupling element is disposed in the second cavity, and the first coupling element is connected to a ground.

Abstract: A multi-mode filter for realizing wide-band is disclosed. The multi-mode filter includes a housing; a plurality of cavities formed in the housing; a plurality of resonators located in each of the cavities; at least one connector formed through a side wall of the housing; and at least one coupling element connected to the at least one connector in the cavities, the at least one coupling element coupling the at least one connector with at least one of the resonators respectively, wherein each of the at least one coupling element has “T” shape in view of front section and “L” shape in view of side section.

Abstract: A multi-mode filter for realizing wide-band is disclosed. The multi-mode filter includes a housing; a plurality of cavities formed in the housing; a plurality of resonators located in each of the cavities; at least one connector formed through a side wall of the housing; and at least one coupling element connected to the at least one connector in the cavities, the at least one coupling element coupling the at least one connector with at least one of the resonators respectively, wherein each of the at least one coupling element has “T” shape in view of front section and “L” shape in view of side section.

Abstract: A multi-mode filter for realizing wide band using capacitive coupling and inductive coupling and capable of tuning coupling value is disclosed. The multi-mode filter includes a housing; a first cavity and a second cavity formed in the housing; a first resonator located in the first cavity, a second resonator located in the second cavity, a wall configured to separate the first cavity from the second cavity; and a first coupling element, wherein a groove is formed between the housing and the wall, the first coupling element is inserted in the groove in crossing direction to the wall, one part of the first coupling element is disposed in the first cavity, another part of the first coupling element is disposed in the second cavity, and the first coupling element is connected to a ground.

Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

Abstract: Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Abstract: A method for forming a pattern of a semiconductor device is disclosed which can increase the contact area between a photoresist and an anti-reflective film by performing an etching process on the anti-reflective film in a process of forming a photoresist pattern for a semiconductor device so as to form fine irregularities, thereby preventing collapse of a photoresist pattern. The disclosed method includes: (a) forming an organic anti-reflective film by coating an organic anti-reflective coating composition onto an upper portion of a layer to be etched, and performing a baking process thereto; (b) forming fine irregularities on the organic anti-reflective film by performing an etching process on the formed organic anti-reflective film; and (c) forming a photoresist pattern by coating a photoresist on the upper portion of the organic anti-reflective film, exposing the photoresist and then developing the same.

Abstract: A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.

Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.

Abstract: A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.

Abstract: The present disclosure relates to an organic anti-reflective coating composition and a method for forming photoresist patterns using the same. The anti-reflective coating compositions are useful for preventing reflection of a lower film layer or a substrate of a photoresist film, reducing standing waves caused by light and variations in the thickness of the photoresist itself, and increasing the uniformity of the photoresist patterns. More particularly, the present invention relates to an organic anti-reflective coating composition comprising particular organo-silicon based polymers and a method for forming photoresist patterns using the same. The organic anti-reflective coating composition can prevent excessive absorbency of an anti-reflective film formed therefrom and, thus, minimize the reflectivity of the film so that it can efficiently remove standing waves and increase the uniformity of the photoresist pattern.

Abstract: Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises H2O as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because H2O is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.