Abstract: An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.

Abstract: Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved. wherein n is an integer ranging from 1 to 5.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution.

Abstract: Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.

Abstract: A cross-linking polymer for an organic anti-reflective coating that is able to improve the uniformity of an ultra-fine photoresist pattern formed using a photolithography process and an ArF light source with 194 nm wavelength. Organic anti-reflective coatings including the same and a method for forming a photoresist pattern using the same are also disclosed. The disclosed cross-linking polymer is capable of preventing scattered reflection from a bottom film layer, eliminating standing wave effect due to alteration of thickness of the photoresist film, and increasing uniformity of the thickness of photoresist pattern. At the same time, the disclosed cross-linking pattern increases the etching velocity of the organic anti-reflective coating so that it can be easily removed.

Abstract: A hot plate oven used in a thermal process of forming an ultrafine photoresist pattern and a method of forming a pattern using the same. More particularly, a hot plate oven used to flow photoresist under the high pressure in the sealed oven during a resist flow process.

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2 and m are defined in the specification.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I, its preparation method and an organic anti-reflective coating composition with respect to an ultra-fine pattern formation process of the photoresist for photolithography technique using ArF light source with a wavelength of 193 nm or VUV light source with a wavelength of 157 nm. An organic anti-reflective coating polymer capable of protecting a photoresist from amines in the atmosphere to minimize the post exposure delay effect after exposure to light and, at the same time, enhances notching status, such as, a pattern distortion caused by diffused reflection, and reducing reflection rate to minimize the swing effect. wherein m is an integer ranging from 5 to 5000.

Abstract: Cleaning solutions for removing photoresist materials and a method of forming underlying layer patterns of semiconductor devices using the same. The cleaning solutions for removing photoresist include a solvent mixture of H2O and an organic solvent, an amine compound, a transition metal-removing material and an alkali metal-removing material, and may further include a hydrazine hydrate.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.

Abstract: Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation.

Abstract: A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.

Abstract: Overcoating compositions for photoresist and methods for reducing linewidth of the photoresist patterns are disclosed. More specifically, an overcoating composition containing acids is coated on a whole surface of a photoresist pattern formed by a common lithography process to diffuse the acids into the photoresist pattern. The photoresist in the portion where the acids are diffused is developed with an alkali solution to be removed. As a result, the linewidth of positive photoresist patterns can be reduced, and the linewidth of negative photoresist patterns can be prevented from slimming in a subsequent linewidth measurement process using SEM.

Abstract: A method for forming patterns of a semiconductor device is disclosed which inhibits collapse of photoresist patterns in photoresist pattern-forming processes of the semiconductor device by forming micro-bends in an anti-reflective film to increase the contact area between a photoresist and the anti-reflective film and, simultaneously prevents critical dimension (CD) alteration of the photoresist pattern by creating micro-bends and double-laminating of anti-reflective films with different refractive indices and light-absorbencies.

Abstract: Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.

Abstract: A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.

Abstract: Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymer are disclosed. The photoresist polymers include photoresist monomers containing fluorine-substituted benzylcarboxylate group represented by Formula 1. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is suitable for a process using ultraviolet light source such as VUV (157 nm). In the Formula, R1, R2, R3 and m are defined in the specification.

Abstract: An organic anti-reflective polymer which prevents back reflection of lower film layers and eliminates standing wave that is occurred by a thickness change of photoresist and light, in a process for fabricating ultrafine patterns that use photoresist for lithography by using 193 nm ArF and its preparation method. More particularly, the organic anti-reflective polymer of the present invention is useful for fabricating ultrafine patterns of 64M, 256M, 1G, and 4G DRAM semiconductor devices. A composition containing such organic anti-reflective polymer, an anti-reflective coating layer made therefrom and a preparation method thereof.

Abstract: Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.