Abstract: Provided is a tape for electronic devices with lead crack and a method of manufacturing the tape. According to the present invention, by forming a bending portion on a narrow circuit pattern to be connected from an inner lead to an outer lead and further forming the bending portion within a resin application portion, crack occurred in a narrow wiring width can be avoided. The tape may includes a first lead and a second lead formed on a dielectric substrate and a bending portion formed on one of the first lead and the second lead wherein the bending portion is formed within a resin application portion.

Abstract: A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias.

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract: A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

Abstract: The present application relates to: a strip for lateral flow assay, comprising a support, a medium for development, a sample pad comprising a subpad, and an absorption pad; and a cartridge for lateral flow assay, comprising the same. According to the present application, the strip adopts a novel sample loading method, thereby obtaining reproducible results irrespective of the volume of an injected sample, and it is possible to readily change the amount of a sample, as necessary, thereby improving the reproducibility of measured results and convenience.

Abstract: Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line.

Abstract: A composition for an optical film, including a first liquid crystal compound represented by the following Chemical Formula 1 and a second liquid crystal compound represented by the following Chemical Formula 2, wherein a difference between a solubility parameter of the first liquid crystal compound and a solubility parameter of the second liquid crystal compound is about 2.50 to about 2.90 wherein in Chemical Formulae 1 and 2, X, R1 to R3, Z, n, m, and p are the same as described in the detailed description.

Abstract: A rod-shaped FRP bar is manufactured with a fiber and a resin by using a nozzle 100 which includes an outer nozzle 11 having a penetration hole at its center and a plurality of middle nozzles 12 disposed at an inlet of the outer nozzle 11 so that one middle nozzle is located inside another middle nozzle with an interval. Fibers are supplied through a center hole of the middle nozzle located at an innermost location, through intervals between the middle nozzles and through intervals between the middle nozzles and the outer nozzle, thereby making a hybrid FRP bar 1 having a section in which the fibers configure a plurality of fiber distribution layers from the center of the FRP bar toward the outside.

Abstract: A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Abstract: A rod-shaped FRP bar is manufactured with a fiber and a resin by using a nozzle (100) which includes an outer nozzle (11) having a penetration hole at its center and a plurality of middle nozzles (12) disposed at an inlet of the outer nozzle 11 so that one middle nozzle is located inside another middle nozzle with an interval. Fibers are supplied through a center hole of the middle nozzle located at an innermost location, through intervals between the middle nozzles and through intervals between the middle nozzles and the outer nozzle, thereby making a hybrid FRP bar (1) having a section in which the fibers configure a plurality of fiber distribution layers from the center of the FRP bar toward the outside.

Abstract: A method of programming a nonvolatile memory device comprises applying at least one test program pulse to selected memory cells located in a scan read area, performing a scan read operation on the selected memory cells following application of the at least one test program pulse to detect at least one one-shot upper cell, calculating an offset voltage corresponding to a scan read region at which the scan read operation is performed, setting a program start bias using the offset voltage, and executing at least one program loop using the program start bias.

Abstract: A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

Abstract: The present invention relates to a capillary microcuvette, the microcuvette comprises a body member having two plates and a cavity formed within the body, the cavity being defined by two opposing inner surfaces of the two plates of the body member, a portion of the cavity defining a detection zone, a capillary inlet being provided at one end of the body member that is communicated with the cavity, a sample slot being provided at a portion of the body member in which the capillary inlet is not formed, the sample slot being communicated with the cavity. The present microcuvette improves user convenience by providing dual application means of applying a specimen directly from a fingertip or using a pipette.

Abstract: A washing machine provided with an improved structure of a front surface frame thereof to which a door is coupled. The washing machine includes a cabinet forming an external appearance of the washing machine, an opening part provided at the cabinet through which laundry is inserted and withdrawn, a door coupled to the cabinet to open/close the opening part, a mounting part provided at a front surface of the cabinet and allowing the door to be mounted thereon, and at least one rib provided at the mounting part and configured to reinforce strength of the cabinet, so that the strength of the frame to which the door is assembled is reinforced to prevent the door from drooping due to weight of the door, and to reduce noise generated due to vibration of the frame when the washing machine operates.

Abstract: An HA-protein conjugate in which an HA-aldehyde derivative, in which an aldehyde group is introduced to a hyaluronic acid or a salt thereof, is conjugated to the N-terminus of a protein, and a method for preparing the same are provided. The HA-protein conjugate includes a protein drug exhibiting an excellent bioconjugation efficiency and long-term medicinal effects, and has excellent protein drug activities since the hyaluronic acid is specifically conjugated to the N-terminus of the protein. Also, since liver-targeting properties of the hyaluronic acid can be freely controlled by changing an aldehyde substitution rate of the HA-aldehyde derivative, the HA-protein conjugate can be effectively used as a protein drug for treating liver diseases, and also be useful in enabling long-term medicinal effects of a protein drug required to bypass the liver. Accordingly, the HA-protein conjugate can be effectively used for a drug delivery system of proteins.

Abstract: A method of operating a memory device includes changing a first read voltage, which determines a first voltage state or a second voltage state, to a voltage within a first range and determining the voltage as a first select read voltage, and changing a second read voltage, which is used to determine whether the data stored in the memory cells is a third different voltage state or a fourth different voltage state, to a voltage within a second different range and determining the voltage as a second select read voltage. The first voltage state overlaps the second voltage. The third voltage state overlaps the fourth voltage state. A difference between a voltage at an intersection of the third and fourth voltage states and the second read voltage is greater than a difference between a voltage at an intersection of the first and second voltage states and the first read voltage.

Abstract: The present invention relates to a carrier tape for TAB-package and a manufacturing method thereof, wherein a TAB tape including a base film having a central area and edge areas at both directions of the central area, a wiring pattern formed at the central area of the base film, a transfer area formed at the edge area of the base film and exposed by the base film, a plurality of sprocket holes arranged in a row on the transfer area and a metal pattern discretely formed from the wiring pattern, and formed at the edge areas of the base film, wherein the metal pattern is formed with a paired structure formed at both sides of the plurality of sprocket holes, such that the present invention has an advantageous effect in that no Cu layer or a metal layer exists at a portion of the sprocket holes from which friction is generated by a driving roller during assembly work between a drive IC and chips/drive IC and panel to dispense with generation of foreign objects such as Cu particles, thereby enhancing reliability of

Abstract: Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step.

Abstract: A method of driving a nonvolatile memory device, includes; forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells, and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells, and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells.

Abstract: A memory device useable with a memory system includes a voltage generator to a plurality of first candidate voltages and a plurality of second candidate voltages, and an X decoder to sequentially apply each of the plurality of first candidate voltages and each of the plurality of second candidate voltages to one or more cells of a memory cell array, and then to apply one of the plurality of first candidate voltages and one of the plurality of second candidate voltages as a first read voltage and a second voltage, respectively, to read data from the cells of the memory cell array according to a characteristic of the cells of the memory cell array.