Abstract: A portable terminal with a detachable BLUETOOTH headset is provided. The terminal includes the BLUETOOTH headset installed detachably in the portable terminal, a receiver module and a microphone module installed in the BLUETOOTH headset and used for phone call, an electrical connection means for, when the BLUETOOTH headset is installed in the portable terminal, electrically connecting the BLUETOOTH headset with the portable terminal, and a controller for detecting an installation or non-installation of the BLUETOOTH headset and for performing a corresponding operation. When the BLUETOOTH headset is installed in the portable terminal, the receiver module of the BLUETOOTH headset is used as a receiver module for the portable terminal.

Abstract: A multi-function switch assembly configured to implement a push switch function is provided. A structure for operating pivot switches of the multi-function switch assembly includes a Printed Circuit Board (PCB) disposed between upper and lower casings coupled together to face each other, push. switches and rotary switches mounted on the PCB, pivot switches mounted on a bottom of the PCB, a pair of sliders disposed to cross each other at a bottom of the lower casing and configured to laterally ground and operate the pivot switches in eight directions while operating in conjunction with a manipulation direction of the actuation lever, and alignment means configured to elastically support at least one of bottoms of the pair of sliders so that restoring force of a neutral state is generated.

Abstract: A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.

Abstract: A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

Abstract: A resonance device for a speaker is provided. The device includes a speaker unit and a resonance unit. The speaker unit outputs a sound corresponding to a signal. The resonance unit is fixed to the speaker unit to provide a space for allowing a sound to resonate. The resonance unit is flexible, and the space for allowing a sound to resonate is variable.

Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.

Abstract: Disclosed is a thread-type battery. The battery of the present invention comprises a flexible body unit, a first pole terminal which is formed at one end of the body unit, and which protrudes so as to be insertable into a first external terminal, and a second pole terminal which is formed at the other end of the body unit which has a shape in which a second external terminal is to be inserted, and which has a polarity opposite that of the first pole terminal. The present invention enables users to easily connect positive poles and negative poles.

Abstract: A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

Abstract: Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

Abstract: Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.

Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

Abstract: A battery mounted semiconductor device is provided. A battery mounted semiconductor device comprises a semiconductor silicon wafer, an electric power supply formed on a backside of the semiconductor silicon wafer and a circuit pattern formed on a front side of the semiconductor silicon wafer.

Abstract: A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.

Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.

Abstract: A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

Abstract: A display device includes a gate pattern, a semiconductor pattern, a source pattern and a pixel electrode are provided. The gate pattern is formed on a base substrate and includes a gate line and a gate electrode. The semiconductor pattern is formed on the base substrate having the gate pattern and includes an oxide semiconductor. The source pattern is formed from a data metal layer and formed on the base substrate having the semiconductor pattern, and includes a data line, a source electrode and a drain electrode. The data metal layer includes a first copper alloy layer, and a lower surface of the data metal layer substantially coincides with an upper surface of the semiconductor pattern. The pixel electrode is formed on the base substrate having the source pattern and electrically connected to the drain electrode. Thus, manufacturing processes may be simplified, and reliability may be improved.

Abstract: Disclosed is a semiconductor silicon wafer having an electric power supply affixed to the backside of the wafer. By fabricating the electric power supply onto the backside of the wafer that has been left unused, the semiconductor chip can have a self-supplied power, realizing the self-powered semiconductor chip with an increased efficiency. Further, since the electric power supply is installed on the wafer, not the semiconductor chip, the fabrication procedure becomes very simple, and the battery can be mounted on any type of chip.

Abstract: The present invention provides a semiconductor component. The semiconductor component in accordance with the present invention includes a lower layer including a low resistance layer and a high resistance layer with higher resistivity than the low resistance layer while surrounding a lateral surface of the low resistance layer; a source electrode disposed on a front surface of the high resistance layer; a gate structure disposed on a front surface of the low resistance layer; a drain structure disposed on a rear surface of the low resistance layer; and a base substrate surrounding the drain structure on a rear surface of the high resistance layer.

Abstract: Provided is a backlight unit that increases brightness and increases uniformity of the brightness. The backlight unit includes a plurality of point light sources. A light guide panel includes a first surface that receives incident light from the point light sources. A second surface is where the lights from the point light sources cross. Prism patterns are formed on the first surface.

Abstract: This invention relates to a karaoke CD format and a device for controlling audio signals utilizing the karaoke CD format which provides a user with selective reproduction of the voice of a player. The karaoke CD format includes a CD format divided into video sectors and audio sectors. The audio sectors are further divided into a part for recording accompaniment sound and playing sound at the same time and a part for recording accompaniment sound only. There is provided record coding information for distinguishing the parts. A device, method and recording medium for reproducing digital data, are discussed. According to an embodiment, the recording medium includes digital audio data recorded thereon, the digital audio data comprising data units corresponding to at least one of: a first type of digital audio data, and a second type of digital audio data which includes at least one content different from the first type of digital audio data.