Abstract: A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.

Abstract: The present invention relates to the wire type battery for wireless charging which is constructed by adding the coil for wireless charging to the wire type battery, by which the present invention can provide the wire type battery for wireless charging to easily carry out charging compared to the existing wire charging method and can solve the problem in the charging which is expected from the shape of the battery to improve the effect of charging.

Abstract: A device for accounting for changes in characteristics of a transistor is presented. The device includes a transistor and a comparator receiving a feedback signal from the transistor and a reference signal. The comparator provides an output to a bias voltage generator. The bias voltage generator includes an input connected to the output of the comparator and an output connected to the transistor. In some embodiments of the invention the transistor is a double gate transistor and the bias voltage generator is applied to a top gate of the double gate transistor in order to control characteristics of the transistor such as turn on voltage.

Abstract: A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.

Abstract: A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.

Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.

Abstract: The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device in which a shock-absorbing member is provided in a liquid crystal display device that is provided as an element of a mobile communication system, thereby ensuring the stability of a driver integrated circuit against an external shock.

Abstract: A liquid crystal display (LCD) device including: a liquid crystal display panel; a light source provided below the liquid crystal display panel and emitting light to provide the light to the liquid crystal display panel; a light guide plate disposed below the liquid crystal display panel and guiding light emitted from the light source to the liquid crystal display panel; a lower cover accommodating the liquid crystal display panel, the light source and the light guide plate assembled therein; and a bent portion extending from an end portion of the lower cover and bent toward the outer side of the liquid crystal display panel at least once to absorb an impact applied from the exterior. An external impact can be absorbed to prevent damage of the LCD device.

Abstract: The present invention relates to a liquid crystal display device and a method for fabricating the same, and the liquid crystal display device may be configured by including a light guide plate with a plurality of movement prevention structures at both sides thereof, respectively; a lower cover with opening portions at the positions corresponding to the plurality of movement prevention structures, and on which the light guide plate being disposed; a light source unit disposed at a side of the light guide plate; a support main with insertion portions for inserting and mounting the movement prevention structures at the positions corresponding to the opening portions; a diffuser sheet and an optical sheet disposed on the light guide plate; and a liquid crystal panel disposed at an upper portion of the support main.

Abstract: A backlight unit with a new configuration is disclosed. The backlight unit includes: a main support formed using a mold which opens upward; a light source unit disposed on one side of the main support; a light guide plate disposed parallel to the light source unit and configured to convert dot light emitted from the light source unit into two-dimensional light; and optical sheets disposed on the light guide plate. The main support is provided with a light incident space, which allows light emitted from the light source unit to be entirely and evenly entered to the light guide plate, on its one side opposite to the light source unit.

Abstract: A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.

Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.

Abstract: Provided are a thin-film transistor (TFT) display panel having improved electrical properties that can be fabricated time-effectively and a method of fabricating the TFT display panel. The TFT display panel includes: gate wirings which are formed on an insulating substrate; oxide active layer patterns which are formed on the gate wirings; data wirings which are formed on the oxide active layer patterns to cross the gate wirings; a passivation layer which is formed on the oxide active layer patterns and the data wirings and is made of silicon nitride (SiNx); and a pixel electrode which is formed on the passivation layer.

Abstract: A liquid crystal panel according to an exemplary embodiment of the present invention includes a substrate, and a pixel electrode arranged on the substrate. The pixel electrode includes a first subpixel electrode and a second subpixel electrode separated from each other, and the second subpixel electrode includes a first electrode part disposed above the first subpixel electrode and a second electrode part disposed below the first subpixel electrode and connected to the first electrode part. At least one first notch is arranged on at least one edge of the first subpixel electrode or the second subpixel electrode.

Abstract: A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.

Abstract: A display substrate includes a base substrate, a gate line, a gate insulation layer, a data line, a thin-film transistor (TFT) and a pixel electrode. The gate line is extended in a first direction on the base substrate. The gate insulation layer is formed on the base substrate to cover the gate line. The data line is extended in a second direction and intersects the gate line at an intersecting portion. At the intersecting portion, the data line is separated from the gate line by an air gap. In another embodiment, the data line also includes at least one etching hole extending to the air gap. The TFT is electrically connected to the data and the gate lines. The pixel electrode is electrically connected to the TFT.

Abstract: The present invention relates to 2-hydroxy-alkylamino-benzoic acid derivatives and to a combination of cell necrosis inhibitor and lithium, process for the preparation of the derivatives or the combination, pharmaceutical formulation containing the derivatives or the combination, and use of the derivatives or the combination by either concomitant or sequential administration for improvement of treatment of neuronal death or neurological dysfunction. The derivatives and the combination of the present invention are useful for treating neurological diseases, such as amyotrophic lateral sclerosis (ALS, Lou Gehrig's disease), spinal muscular atrophy, Alzheimer's disease, Parkinson's disease, Huntington's disease, stroke, traumatic brain injury or spinal cord injury; and for treating ocular diseases such as glaucoma, diabetic retinopathy or macular degeneration.

Abstract: A manufacturing method of a display device, wherein the manufacturing method for an embodiment includes: forming color filters in a plurality of pixel regions; forming a conductive layer on the color filters; and separating the conductive layer in each of the pixel regions through a photolithography process and forming a pixel electrode; wherein a groove is formed between the adjacent color filters having different colors at boundaries between the pixel regions; and wherein the photolithography process uses a negative photoresist material.

Abstract: Provided are a method and an apparatus for periodically measuring speech quality in a voice over Internet protocol (VoIP) terminal while a VoIP call between VoIP terminals is in progress. The method comprises: receiving summary information regarding traffic sent from an opposite VoIP terminal; and evaluating speech quality by comparing the summary information with actually received information regarding the traffic sent from the opposite VoIP. Accordingly, each VoIP terminal can precisely evaluate the speech quality periodically and send the evaluation result to each other.