Patents by Inventor Ki Won Kim

Ki Won Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CHIP DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20140085770
    Abstract: Disclosed herein is a chip device including: a multilayer body having a hexahedral shape; an external electrode covering both distal ends of the multilayer body; and a shape maintaining material contained in the external electrode to maintain a shape of the external electrode at the time of forming the external electrode.
    Type: Application
    Filed: March 14, 2013
    Publication date: March 27, 2014
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Jung Tae Park, Seung Heon Han, Young Jun Choi, Ji Hee Moon, Ki Won Kim, Joon Hwan Kwag
  • Liquid crystal display device
    Patent number: 8681284
    Abstract: The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device in which a shock-absorbing member is provided in a liquid crystal display device that is provided as an element of a mobile communication system, thereby ensuring the stability of a driver integrated circuit against an external shock.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: March 25, 2014
    Assignee: LG Display Co., Ltd.
    Inventor: Ki-Won Kim
  • Liquid crystal display device
    Patent number: 8681292
    Abstract: Disclosed is a liquid crystal display (LCD) device capable of enhancing brightness uniformity by preventing light leakage. The LCD device comprises an LC panel; an optical source for providing light to the LC panel; a light guide plate coupled to a light emission surface of the optical source; a light emitting diode (LED) printed circuit board (PCB) disposed on the light guide plate and the optical source; an optical sheet disposed on the light guide plate, and having a diffusion plate and a prism sheet on an upper surface of one side corresponding to the LED PCB, the diffusion plate having a light shielding member attached thereto; and a mold frame for accommodating therein the optical source, the light guide plate, and the optical sheet.
    Type: Grant
    Filed: December 11, 2009
    Date of Patent: March 25, 2014
    Assignee: LG Display Co., Ltd.
    Inventor: Ki-Won Kim
  • Thin film transistor array panel
    Patent number: 8604469
    Abstract: A thin film transistor array panel includes a substrate, a gate line formed on the substrate and including a gate electrode, a gate insulating layer formed on the gate line, a semiconductor formed on the gate insulating layer and including a channel of a thin film transistor, a data line formed on the semiconductor and including a source electrode and a drain electrode formed on the semiconductor and opposite to the source electrode with respect to the channel of the thin film transistor, wherein the channel of the thin film transistor covers both side surfaces of the gate electrode.
    Type: Grant
    Filed: May 13, 2009
    Date of Patent: December 10, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Woo-Geun Lee, Jae-Hyoung Youn, Ki-Won Kim, Young-Wook Lee, Jong-In Kim
  • THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME
    Publication number: 20130306972
    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate.
    Type: Application
    Filed: December 21, 2012
    Publication date: November 21, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hye Young RYU, Ki Won KIM, Jae Woo PARK, Kap Soo YOON, Young Joo CHOI
  • DOCKING STATION HAVING STRUCTURE FOR SOUND AMPLIFICATION AND SOUND QUALITY ENHANCEMENT
    Publication number: 20130279731
    Abstract: A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power.
    Type: Application
    Filed: June 24, 2013
    Publication date: October 24, 2013
    Inventors: Jun Tai KIM, Byoung-Hee LEE, Jang Hoon KANG, Joon Rae CHO, Jung Eun HAN, Ki Won KIM, Tae Eon KIM, Sun Young LEE
  • Thin film transistor array panel and method for manufacturing the same
    Patent number: 8563368
    Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: October 22, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Wook Lee, Hong-Suk Yoo, Jean-Ho Song, Jae-Hyoung Youn, Woo-Geun Lee, Ki-Won Kim, Jong-In Kim
  • Thin film transistor substrate and method of fabricating the same
    Patent number: 8558230
    Abstract: A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.
    Type: Grant
    Filed: April 8, 2010
    Date of Patent: October 15, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dong-Hoon Lee, Je-Hun Lee, Do-Hyun Kim, Hee-Tae Kim, Chang-Oh Jeong, Pil-Sang Yun, Ki-Won Kim
  • THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
    Publication number: 20130248866
    Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.
    Type: Application
    Filed: May 20, 2013
    Publication date: September 26, 2013
    Applicant: Samsung Display Co., Ltd.
    Inventors: Young-Wook LEE, Woo-Geun Lee, Ki-Won Kim, Hyun-Jung Lee, Ji-Soo Oh
  • Method for processing connection request of a disk player
    Patent number: 8539537
    Abstract: A method for connecting a media player to a remote server is provided. The method comprises processing a request for connecting to an remote server while reproducing data recorded on an enhanced navigation medium, processing connection information recorded on the enhanced navigation medium to determine whether connection to the remote server is permitted, and requesting connection to the remote server, if connection to the remote server is permitted in accordance with the connection information.
    Type: Grant
    Filed: September 25, 2003
    Date of Patent: September 17, 2013
    Assignee: LG Electronics Inc.
    Inventors: Ki Won Kim, Jea Yong Yoo, Woo Seong Yoon
  • THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME
    Publication number: 20130234124
    Abstract: Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 12, 2013
    Applicant: Samsung Display Co., Ltd.
    Inventors: KAP-SOO YOON, Woo-Geun Lee, Bong-Kyun Kim, Sung-Hoon Yang, Ki-Won Kim, Hyun-Jung Lee
  • Display substrate and method of manufacturing the same
    Patent number: 8530893
    Abstract: A display substrate includes a gate wire formed on an insulating substrate, a semiconductor pattern formed on the gate wire and containing a metal oxynitride compound, and a data wire formed on the semiconductor pattern to cross the gate wire. The semiconductor pattern has a carrier number density ranging from 1016/cm3 to 1019/cm3.
    Type: Grant
    Filed: August 8, 2011
    Date of Patent: September 10, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Won Kim, Kyoung-Jae Chung, Hye-Young Ryu, Young-Joo Choi, Seung-Ha Choi, Kap-Soo Yoon
  • Structure for operating pivot switches of multi-function switch assembly
    Patent number: 8487200
    Abstract: A multi-function switch assembly configured to implement a push switch function is provided. A structure for operating pivot switches of the multi-function switch assembly includes a Printed Circuit Board (PCB) disposed between upper and lower casings coupled together to face each other, push switches and rotary switches mounted on the PCB, pivot switches mounted on a bottom of the PCB, a pair of sliders disposed to cross each other at a bottom of the lower casing and configured to laterally ground and operate the pivot switches in eight directions while operating in conjunction with a manipulation direction of the actuation lever, and alignment means configured to elastically support at least one of bottoms of the pair of sliders so that restoring force of a neutral state is generated.
    Type: Grant
    Filed: June 11, 2011
    Date of Patent: July 16, 2013
    Assignee: Alps Electric Korea Co., Ltd
    Inventors: Dae Yeon Yang, Ki Won Kim, Jong Rog Kim
  • Docking station having structure for sound amplification and sound quality enhancement
    Patent number: 8483420
    Abstract: A docking station for sound amplification and sound quality enhancement is provided. The docking station includes a support structure for holding a mobile terminal having an internal speaker to sustain the posture of the mobile terminal, and a body for supporting the support structure, and for physically contacting the speaker to increase the volume of sound output from the speaker. The body includes a collecting hole for contacting the speaker to collect sound waves, and a guide hole that extends from the collecting hole through the body to the outside along an extension direction, is divided into two branches within the body to guide the collected sound waves along different paths, and has a horn shape whose cross section increases along the extension direction. Hence, the docking station can increase the volume of audible sound and sound quality without separate supply of power.
    Type: Grant
    Filed: July 5, 2011
    Date of Patent: July 9, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Tai Kim, Byoung-Hee Lee, Jang Hoon Kang, Joon Rae Cho, Jung Eun Han, Ki Won Kim, Tae Eon Kim, Sun Young Lee
  • THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
    Publication number: 20130146864
    Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.
    Type: Application
    Filed: May 4, 2012
    Publication date: June 13, 2013
    Applicant: SAMSUNG DISPLAY CO., LTD.
    Inventors: Ki-Won KIM, Kap Soo YOON, Woo Geun LEE, Jin-Won LEE, Se-Myung KWON, Jung Ouck AHN, Si Jin KIM
  • Thin film transistor array substrate and manufacturing method thereof
    Patent number: 8450736
    Abstract: A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: May 28, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Wook Lee, Woo-Geun Lee, Ki-Won Kim, Hyun-Jung Lee, Ji-Soo Oh
  • Thin-film transistor substrate, method of manufacturing the same, and display device including the same
    Patent number: 8445301
    Abstract: Provided are a thin-film transistor (TFT) substrate, a method of manufacturing the same, and a display device including the same. The TFT substrate includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulating layer, a source electrode formed on the oxide semiconductor pattern, a drain electrode formed on the oxide semiconductor pattern to face the source electrode, and a pixel electrode formed on the gate insulating layer.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: May 21, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Kap-Soo Yoon, Woo-Geun Lee, Bong-Kyun Kim, Sung-Hoon Yang, Ki-Won Kim, Hyun-Jung Lee
  • PROTECTIVE CASE WITH SPEAKER SOUND AMPLIFICATION PATH
    Publication number: 20130070948
    Abstract: A protective case having a speaker sound amplification path and an electronic device including at least one speaker device are disclosed. The protective case includes a base surface placed adjacent to at least one side of the electronic device to protect the electronic device, at least one speaker sound amplification path formed in the base surface and having a specific depth including a first location corresponding to a speaker hole of the electronic device to output a speaker sound of the speaker device, and a speaker sound output hole at a second location extended from the speaker sound amplification path and formed to an outer side of the protective case in an open manner, wherein the speaker sound output from the speaker hole is amplified within the speaker sound amplification path and is then output through the speaker sound output hole.
    Type: Application
    Filed: August 22, 2012
    Publication date: March 21, 2013
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Byoung-Hee LEE, Ki-Won KIM, Sun-Young LEE
  • Thin film transistor array panel and method for manufacturing the same
    Patent number: 8389998
    Abstract: A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: March 5, 2013
    Assignee: Samsung Display Co., Ltd.
    Inventors: Young-Wook Lee, Hong-Suk Yoo, Jean-Ho Song, Jae-Hyoung Youn, Woo-Geun Lee, Ki-Won Kim, Jong-In Kim
  • Backlight unit and liquid crystal display device having the same
    Patent number: 8390757
    Abstract: A backlight unit with a new configuration is disclosed. The backlight unit includes: a main support formed using a mold which opens upward; a light source unit disposed on one side of the main support; a light guide plate disposed parallel to the light source unit and configured to convert dot light emitted from the light source unit into two-dimensional light; and optical sheets disposed on the light guide plate. The main support is provided with a light incident space, which allows light emitted from the light source unit to be entirely and evenly entered to the light guide plate, on its one side opposite to the light source unit.
    Type: Grant
    Filed: October 2, 2009
    Date of Patent: March 5, 2013
    Assignee: LG Display Co., Ltd.
    Inventors: Ki Won Kim, Ki Hyun Cho