Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: A method of fabricating a thin film transistor (TFT) substrate includes forming a gate line and a data line on an insulating substrate. The data line crosses the gate line and is insulated from the gate line. The formation of the gate line, the data line, or both the gate line and the data line includes forming a low-resistive conductive pattern on a base pattern using an electroless plating method.

Abstract: A flexible electrochromic device including a flexible transparent electrode including a predetermined pattern, an insulating layer formed on a portion of the transparent electrode other than the predetermined pattern, a semiconductor layer formed on the predetermined pattern, an electrochromic monolayer formed on the semiconductor layer, a flexible counter electrode disposed to face the transparent electrode and an electrolyte provided in a space between the transparent electrode and the counter electrode.

Abstract: A black matrix, a method for preparing the black matrix, a flat panel display and an electromagnetic interference filter using the black matrix. The black matrix may comprise a substrate, a titanium oxide layer, a Ni plating layer, and a Ni/Pd alloy layer. The method may comprise the steps of forming a titanium oxide layer, forming a metal particle-deposited pattern on the titanium oxide layer, forming a Ni electroless plating layer on the metal particle-deposited pattern, and forming a Ni/Pd alloy layer on the Ni electroless plating layer. Since the black matrix may have a high blackening density via simple selective multilayer plating without using a high-price vacuum sputtering apparatus and undergoing photolithography, unlike conventional chromium-based black matrices, it may be employed in various flat panel displays. In addition, since the black matrix may exhibit superior electrical conductivity, it may be used in electromagnetic interference filters without additional front-surface blackening.

Abstract: Disclosed herein is a transparent electrode featuring the interposition of a nano-metal layer between a grid electrode on a transparent substrate and an electroconductive polymer layer, and a preparation method thereof. The transparent electrode can be produced in a continuous process at high productivity and low cost and can be applied to various display devices.

Abstract: A method for manufacturing a high-transmittance optical filter for image display devices, which may include the steps of coating a photocatalytic compound on a transparent substrate to form a photocatalytic film, selectively exposing the photocatalytic film to light and growing a metal crystal thereon by plating to form a metal pattern, and selectively etching and removing the photocatalytic compound remaining on the transparent substrate using a buffered oxide etchant (BOE). According to the method, a high-transmittance, high-resolution and low-resistivity optical filter can be manufactured in a simple manner at low costs.

Abstract: Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3–C20 alkyl carbonyl, a fluorine-substituted or unsubstituted C3–C20 cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnecting layers of a semiconductor device.

Abstract: A photoacceptive layer having a core-shell structure and a solar cell using the same are provided. More specifically, a photoacceptive layer including a metal oxide of a core-shell structure which can improve photoconversion efficiency by improving a electron migration path, and a solar cell using the same are provided.

Abstract: A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Abstract: Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer. The photosensitive polymer has a weight average molecular weight of about 3,000-50,000 having a repeating unit as follows: wherein R1 is a hydrogen atom or methyl group, and R2 is a fluorinated ethylene glycol group having 3 to 10 carbon atoms.

Abstract: Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.

Abstract: Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer.

Abstract: The present invention relates to a composition for forming a conjugated polymer pattern and a pattern formation process. More specifically, the present invention relates to a composition for forming a pattern of conjugated polymer, comprising a precursor polymer of a certain structure and a photobase generator, and a process of forming a pattern using the same. In accordance with the present invention, not only can a pattern of the conjugated polymer be formed with ease, but the pattern produced thereby can be used advantageously in organo-electric devices, for example, a memory device, a sensor, a solar cell, a storage battery, organic EL, and so forth. Also, when being used in an organic EL device, it shows not only a higher EL efficiency but a lower threshold voltage.

Abstract: A photosensitive polymer including fluorine, a resist composition containing the same and a patterning method for IC fabrication using the resist composition are provided. The photosensitive polymer having at least one selected from the group consisting of fluorine-substituted or unsubstituted alkyl ester, tetrahydropyranyl ester, tetrahydrofuranyl ester, nitrile, amide, carbonyl and hexafluoro alkyl having a hydrophilic group, and a trifluorovinyl derivative monomer as a repeating unit and having a weight average molecular weight of about 3,000 to about 100,000. The photosensitive polymer exhibits high transmittance for a light source of F2 (157 nm), high dry etching resistance, and has characteristics suitable to realize an unitrafine pattern size.

Abstract: Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: 1

Abstract: Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer.

Abstract: A photosensitive polymer comprises a fluorinated ethylene glycol group and a chemically amplified resist composition including the photosensitive polymer.