Patents by Inventor Ki Bum Nam

Ki Bum Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230250936
    Abstract: A light diffusing lens having a pointing angle distribution focused toward a lateral direction. The light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens. The light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.
    Type: Application
    Filed: April 17, 2023
    Publication date: August 10, 2023
    Inventors: Jeong A. Han, Eun Ju KIM, Ki Bum NAM
  • Patent number: 11655960
    Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens, wherein the light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: May 23, 2023
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
  • Publication number: 20230056190
    Abstract: A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.
    Type: Application
    Filed: November 3, 2022
    Publication date: February 23, 2023
    Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Ho, San Shin Park, Michael Lim
  • Patent number: 11545599
    Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.
    Type: Grant
    Filed: October 15, 2020
    Date of Patent: January 3, 2023
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
  • Publication number: 20210028334
    Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.
    Type: Application
    Filed: October 15, 2020
    Publication date: January 28, 2021
    Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
  • Patent number: 10809507
    Abstract: A light emitting module including a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements, in which the lens includes a concave part having a light incident surface and an upper surface through which light exits out from the lens, the upper surface includes a convex portion including sections, at least two of the sections having different curvatures from each other, and the at least two of the sections each has a thickness equal to or greater than 1 ?m, and less than the width of the light emitting element.
    Type: Grant
    Filed: April 4, 2019
    Date of Patent: October 20, 2020
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Eun Ju Kim, Ki Bum Nam
  • Patent number: 10811572
    Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.
    Type: Grant
    Filed: October 7, 2015
    Date of Patent: October 20, 2020
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
  • Publication number: 20200088386
    Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens, wherein the light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.
    Type: Application
    Filed: November 22, 2019
    Publication date: March 19, 2020
    Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
  • Patent number: 10510933
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 17, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Publication number: 20190363225
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.
    Type: Application
    Filed: August 12, 2019
    Publication date: November 28, 2019
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
  • Patent number: 10424697
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: September 24, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Patent number: 10418514
    Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: September 17, 2019
    Assignee: SEOUL VIOSYS CO., LTD.
    Inventors: Kwang Joong Kim, Chang Suk Han, Kyung Hee Ye, Seung Kyu Choi, Ki Bum Nam, Nam Yoon Kim, Kyung Hae Kim, Ju Hyung Yoon
  • Publication number: 20190237636
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Application
    Filed: April 1, 2019
    Publication date: August 1, 2019
    Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
  • Publication number: 20190234583
    Abstract: A light emitting module including a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements, in which the lens includes a concave part having a light incident surface and an upper surface through which light exits out from the lens, the upper surface includes a convex portion including sections, at least two of the sections having different curvatures from each other, and the at least two of the sections each has a thickness equal to or greater than 1 ?m, and less than the width of the light emitting element.
    Type: Application
    Filed: April 4, 2019
    Publication date: August 1, 2019
    Inventors: Eun Ju KIM, Ki Bum Nam
  • Patent number: 10281111
    Abstract: A light emitting module includes a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted form the light emitting elements. The lens includes a concave part having a light incident surface and an upper surface through which the light incident on the lens is emitted, and at least one of the light incident surface and the upper surface includes sections disposed at least 15° from a central axis and sequentially connected in a first direction.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: May 7, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Eun Ju Kim, Ki Bum Nam
  • Patent number: 10276760
    Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: April 30, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jae Wan Song, Jae Hyun Park, So Mi Park, Ki Bum Nam
  • Patent number: 10249801
    Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: April 2, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Publication number: 20180342653
    Abstract: A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.
    Type: Application
    Filed: July 13, 2018
    Publication date: November 29, 2018
    Inventors: Chung Hoon LEE, Dae Sung KAL, Ki Bum NAM
  • Patent number: 10094535
    Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance portion having a shape which is concave inward from the lower portion of the light diffusing lens, a reflection portion having a shape which is concave inward from the upper portion of the light diffusing lens, and a light exit portion defined by the outer surface of the light diffusing lens. The light entrance portion has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as it goes toward the inside of the light diffusing lens.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: October 9, 2018
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
  • Patent number: 10054731
    Abstract: A light source module including a circuit board, a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a reflective portion disposed on the circuit board and having at least one recess accommodating the first light emitting device, and a bonding member disposed between the circuit board and the reflective portion. The reflective portion has a height greater than a height of the first light emitting device.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: August 21, 2018
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Seoung Ho Jung, Jung Hwa Jung, Ki Bum Nam