Patents by Inventor Ki Bum Nam
Ki Bum Nam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230250936Abstract: A light diffusing lens having a pointing angle distribution focused toward a lateral direction. The light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens. The light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.Type: ApplicationFiled: April 17, 2023Publication date: August 10, 2023Inventors: Jeong A. Han, Eun Ju KIM, Ki Bum NAM
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Patent number: 11655960Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens, wherein the light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.Type: GrantFiled: November 22, 2019Date of Patent: May 23, 2023Assignee: Seoul Semiconductor Co., Ltd.Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
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Publication number: 20230056190Abstract: A light emitting diode package including: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.Type: ApplicationFiled: November 3, 2022Publication date: February 23, 2023Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Ho, San Shin Park, Michael Lim
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Patent number: 11545599Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.Type: GrantFiled: October 15, 2020Date of Patent: January 3, 2023Assignee: Seoul Semiconductor Co., Ltd.Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
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Publication number: 20210028334Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.Type: ApplicationFiled: October 15, 2020Publication date: January 28, 2021Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
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Patent number: 10809507Abstract: A light emitting module including a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements, in which the lens includes a concave part having a light incident surface and an upper surface through which light exits out from the lens, the upper surface includes a convex portion including sections, at least two of the sections having different curvatures from each other, and the at least two of the sections each has a thickness equal to or greater than 1 ?m, and less than the width of the light emitting element.Type: GrantFiled: April 4, 2019Date of Patent: October 20, 2020Assignee: Seoul Semiconductor Co., Ltd.Inventors: Eun Ju Kim, Ki Bum Nam
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Patent number: 10811572Abstract: A light emitting diode package includes: a housing; a light emitting diode chip arranged in the housing; a wavelength conversion unit arranged on the light emitting diode chip; a first fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the cyan wavelength band; and a second fluorescent substance distributed inside the wavelength conversion unit and emitting light having a peak wavelength in the red wavelength band, wherein the peak wavelength of light emitted from the light emitting diode chip is located within a range of 415 nm to 430 nm.Type: GrantFiled: October 7, 2015Date of Patent: October 20, 2020Assignee: Seoul Semiconductor Co., Ltd.Inventors: Myung Jin Kim, Kwang Yong Oh, Ki Bum Nam, Ji Youn Oh, Sang Shin Park, Michael Lim
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Publication number: 20200088386Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance part having a concave shape formed inward from a lower part of the optical diffusing lens, a reflection part having a shape which is concave inward from an upper portion of the light diffusing lens and a light exit portion defined by an outer surface of the light diffusing lens, wherein the light entrance part has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as the straight line goes toward the inside of the light diffusing lens.Type: ApplicationFiled: November 22, 2019Publication date: March 19, 2020Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
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Patent number: 10510933Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.Type: GrantFiled: August 12, 2019Date of Patent: December 17, 2019Assignee: Seoul Semiconductor Co., Ltd.Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
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Publication number: 20190363225Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.Type: ApplicationFiled: August 12, 2019Publication date: November 28, 2019Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
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Patent number: 10424697Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.Type: GrantFiled: April 1, 2019Date of Patent: September 24, 2019Assignee: Seoul Semiconductor Co., Ltd.Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
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Patent number: 10418514Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.Type: GrantFiled: July 6, 2017Date of Patent: September 17, 2019Assignee: SEOUL VIOSYS CO., LTD.Inventors: Kwang Joong Kim, Chang Suk Han, Kyung Hee Ye, Seung Kyu Choi, Ki Bum Nam, Nam Yoon Kim, Kyung Hae Kim, Ju Hyung Yoon
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Publication number: 20190237636Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.Type: ApplicationFiled: April 1, 2019Publication date: August 1, 2019Inventors: Kwang Yong OH, Ho Jun BYUN, Hyuck Jun KIM, Ki Bum NAM, Su Yeon KIM
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Publication number: 20190234583Abstract: A light emitting module including a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements, in which the lens includes a concave part having a light incident surface and an upper surface through which light exits out from the lens, the upper surface includes a convex portion including sections, at least two of the sections having different curvatures from each other, and the at least two of the sections each has a thickness equal to or greater than 1 ?m, and less than the width of the light emitting element.Type: ApplicationFiled: April 4, 2019Publication date: August 1, 2019Inventors: Eun Ju KIM, Ki Bum Nam
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Patent number: 10281111Abstract: A light emitting module includes a circuit board, light emitting elements disposed on the circuit board, each light emitting element including light emitting diode chips and a wavelength conversion layer coated on the light emitting diode chips, and a lens disposed on the light emitting elements and configured to diffuse light emitted form the light emitting elements. The lens includes a concave part having a light incident surface and an upper surface through which the light incident on the lens is emitted, and at least one of the light incident surface and the upper surface includes sections disposed at least 15° from a central axis and sequentially connected in a first direction.Type: GrantFiled: December 2, 2016Date of Patent: May 7, 2019Assignee: Seoul Semiconductor Co., Ltd.Inventors: Eun Ju Kim, Ki Bum Nam
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Patent number: 10276760Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.Type: GrantFiled: June 30, 2016Date of Patent: April 30, 2019Assignee: Seoul Semiconductor Co., Ltd.Inventors: Jae Wan Song, Jae Hyun Park, So Mi Park, Ki Bum Nam
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Patent number: 10249801Abstract: A light emitting diode package includes a light emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.Type: GrantFiled: July 10, 2017Date of Patent: April 2, 2019Assignee: Seoul Semiconductor Co., Ltd.Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
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Publication number: 20180342653Abstract: A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.Type: ApplicationFiled: July 13, 2018Publication date: November 29, 2018Inventors: Chung Hoon LEE, Dae Sung KAL, Ki Bum NAM
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Patent number: 10094535Abstract: Disclosed is a light diffusing lens having a pointing angle distribution focused toward a lateral direction. The disclosed light diffusing lens includes a light entrance portion having a shape which is concave inward from the lower portion of the light diffusing lens, a reflection portion having a shape which is concave inward from the upper portion of the light diffusing lens, and a light exit portion defined by the outer surface of the light diffusing lens. The light entrance portion has a first convex surface which is convex in an optical axial direction defined by a straight line passing through the center of the light diffusing lens as it goes toward the inside of the light diffusing lens.Type: GrantFiled: July 17, 2014Date of Patent: October 9, 2018Assignee: Seoul Semiconductor Co., Ltd.Inventors: Jeong A Han, Eun Ju Kim, Ki Bum Nam
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Patent number: 10054731Abstract: A light source module including a circuit board, a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a reflective portion disposed on the circuit board and having at least one recess accommodating the first light emitting device, and a bonding member disposed between the circuit board and the reflective portion. The reflective portion has a height greater than a height of the first light emitting device.Type: GrantFiled: May 4, 2016Date of Patent: August 21, 2018Assignee: Seoul Semiconductor Co., Ltd.Inventors: Seoung Ho Jung, Jung Hwa Jung, Ki Bum Nam