Abstract: A shared sense amplifier driver technique for integrated circuit devices including an array of memory cells comprises a plurality of sense amplifiers couplable to the memory cells with each of the sense amplifiers having an associated pull-up and pull-down switching device respectively coupled to a first and second latch node thereof. A first subset of the plurality of sense amplifiers have their first latch node (e.g. latch P-channel “LP”) electrically coupled and a second differing number subset of the plurality of sense amplifiers have their second latch node (e.g. latch N-channel “LN”) electrically coupled. By sharing the selected LP and LN nodes with more than one sense amplifier in a column, “write” recovery time can be significantly improved over that of conventional layouts and designs.

Abstract: A voltage down converter with hysteresis generator combining a hysteresis signal to a reference voltage and an output voltage feedback signal applied to a comparator. The hysteresis generator is coupled to a control signal giving advance notice of when a high current load is to be activated. The hysteresis signal is switched to a first state prior to the high current load activation, and switched to a second state after the high current load activation. In the first state, the hysteresis voltage is added to a reference voltage. In the second state, the hysteresis voltage is added to the voltage output feedback signal.

Abstract: A reference voltage generator for producing a reference voltage that is a preselected amount below a power supply voltage. A reference voltage source produces a first reference voltage that is VREF above the ground potential. A first load device coupled to the ground node and generates an internal reference signal that is determined by the magnitude of current flowing in the first load device. A differential amplifier produces a signal determined by a difference between the signals on the first and second inputs. A current regulating switch having a control node coupled to the differential amplifier output, and coupled to determine the current through the first load device. A second load device coupled in series with the first load device and coupled to the power supply node has an impedance selected to cause the second load device to generate the second reference voltage.

Abstract: A sense amplifier for a very high density integrated circuit memory using CMOS technology is described. Each sense amplifier includes first and second local sense amplifier drive transistors, one connecting the P channel transistors to VCC; the other connecting the N channel transistors to VSS. A read amplifier circuit is provided within each sense amplifier and is operated by read control signals. Internal nodes of the latch of the sense amplifier are coupled by pass transistors that are responsive to column write control signals. Local data write driver transistors are also provided to selectively couple the pass transistors to VCC-Vt or VSS in response to further data write control signals. A relatively wider power line is coupled to the drive transistors to provide VCC thereto, and a narrower line is used to control those first sense amplifier drive transistors.

Abstract: A sense amplifier for a very high density integrated circuit memory using CMOS technology is described. Each sense amplifier includes first and second local sense amplifier drive transistors, one connecting the P channel transistors to VCC; the other connecting the N channel transistors to VSS. A read amplifier circuit is provided within each sense amplifier and is operated by read control signals. Internal nodes of the latch of the sense amplifier are coupled by pass transistors that are responsive to column write control signals. Local data write driver transistors are also provided to selectively couple the pass transistors to VCC-Vt or VSS in response to further data write control signals. A relatively wider power line is coupled to the drive transistors to provide VCC thereto, and a narrower line is used to control those first sense amplifier drive transistors.

Abstract: A memory device including a plurality of sense amplifiers distributed about an integrated circuit chip, where each sense amplifier has a power node for receiving current. A conductor couples the power nodes of a number of sense amplifiers together. A low-impedance power supply conductor extends to each sense amplifier and a local drive transistor is provided for each sense amplifier. A timer unit generates an output signal controlling the local drive transistors. A first component within the timer unit causes the output to change from a first logic level towards a second logic level at a first rate while a second component within the timer unit causes the output to change at a second rate, wherein the second rate is greater than the first rate.

Abstract: A sense amplifier for a very high density integrated circuit memory using CMOS technology is described. Each sense amplifier includes first and second local sense amplifier drive transistors, one connecting the P channel transistors to VCC; the other connecting the N channel transistors to VSS. A read amplifier circuit is provided within each sense amplifier and is operated by read control signals. Internal nodes of the latch of the sense amplifier are coupled by pass transistors that are responsive to column write control signals. Local data write driver transistors are also provided to selectively couple the pass transistors to VCC-Vt or VSS in response to further data write control signals. A relatively wider power line is coupled to the drive transistors to provide VCC thereto, and a narrower line is used to control those first sense amplifier drive transistors.

Abstract: A constant current source is used to provide a constant current to set a delay which defines the period of the output of the oscillator. The delay is preferably set by charging a capacitor with the constant current. Because the current is independent of variations in V.sub.CC and temperature, the capacitor will charge for a given period. Therefore, the frequency or period of oscillation will also be fixed and independent of variation in V.sub.CC or temperature. A current limiting circuit and latch are provided to generate an output which will be transmitted through one or a series of inverters. In an alternate embodiment, a differential amplifier is provided between the delay circuit and the current limiting circuit. This differential amplifier is typically needed in a case where VCC is not well-controlled to provide an output signal which has an appropriate voltage. A method of generating an oscillating output for refreshing a DRAM and a method for refreshing a DRAM are also disclosed.

Abstract: A circuit and method for concurrently addressing at least two rows of memory cells of a memory array of a memory device. By concurrently addressing at least two rows of memory cells during testing of the memory device during a burn-in period, the memory device can be tested in a reduced time period.

Abstract: A wide range power supply for integrated circuits includes a voltage-down converter to receive the input supply voltage and generate a controlled low voltage signal. The circuit also includes a voltage-up converter which receives the controlled low voltage signal to generate a high voltage signal for high power circuits. Finally, a substrate bias generator is employed in the circuit to generate a substrate bias signal. Because the low power voltage is controlled, the high power voltage and the substrate bias signal are independent of any variations in input supply voltage. In alternate embodiments, the voltage-up converter or voltage-down converter can be disabled if the external supply voltage is controlled and maintained in at high or low voltage respectfully.

Abstract: A stress mode circuit is provided to generate a voltage that is either equal to a reference voltage or is a proportion of an external voltage (VCCEXT). The circuit includes two voltage divider circuits to provide the proportion voltage. Two differential amplifiers are provided to generate outputs corresponding to a comparison to the proportion voltage and the reference voltage. The outputs operate switches that couple the reference voltage or the proportion voltage to an output terminal.

Abstract: A wide range power supply for integrated circuits includes a voltage-down converter to receive the input supply voltage and generate a controlled low voltage signal. The circuit also includes a voltage-up converter which receives the controlled low voltage signal to generate a high voltage signal for high power circuits. Finally, a substrate bias generator is employed in the circuit to generate a substrate bias signal. Because the low power voltage is controlled, the high power voltage and the substrate bias signal are independent of any variations in input supply voltage. In alternate embodiments, the voltage-up converter or voltage-down converter can be disabled if the external supply voltage is controlled and maintained in at high or low voltage respectfully.

Abstract: A constant current source is used to provide a constant current to set a delay which defines the period of the output of the oscillator. The delay is preferably set by charging a capacitor with the constant current. Because the current is independent of variations in V.sub.CC and temperature, the capacitor will charge for a given period. Therefore, the frequency or period of oscillation will also be fixed and independent of variation in V.sub.CC or temperature. A current limiting circuit and latch are provided to generate an output which will be transmitted through one or a series of inverters. In an alternate embodiment, a differential amplifier is provided between the delay circuit and the current limiting circuit. This differential amplifier is typically needed in a case where VCC is not well-controlled to provide an output signal which has an appropriate voltage. A method of generating an oscillating output for refreshing a DRAM and a method for refreshing a DRAM are also disclosed.

Abstract: In a fuse programmable voltage generator providing an optimal internal voltage VCCINT, a counter outputs various values to a voltage down comparator to output corresponding internal voltages VCCINT until a desired voltage is obtained. Once the desired internal voltage VCCINT is determined, the counter is disabled and a fuse circuit is configured to substantially maintain the output of the desired internal voltage VCCINT.

Abstract: A high efficiency charge pump for low and wide voltage ranges. The charge pump includes main and secondary charge pumps, the secondary charge pump is employed to avoid the Vt.sub.N drop that the main charge pump exhibits. The secondary charge pump allows the main charge pump to pump to a theoretical maximum of 2 VCC, while maintaining an efficiency close to 40%.

Abstract: An output driver for a CMOS circuit minimizes latch-up. A P-channel transistor (14) has its source-drain path coupled in series with the source-drain path of one or more N-channel transistors (16, 12). An internally generated high voltage VCCP, higher than VCC, is applied to the moat, well, or region in which the P-channel transistor is formed, and is applied to the gate electrode of the N-channel transistor(s). In one embodiment (FIG. 3), the source of the P-channel transistor is connected directly to VCC whereas in another embodiment (FIGS. 1A/1B), it is coupled to the source-drain path of another N-channel transistor, the gate electrode of which is coupled to the high voltage VCCP. In such second embodiment, the drain of the second N-channel transistor is coupled to VCC, so that the P-channel transistor is in series between the two N-channel transistors.

Abstract: A negative charge pump circuit for low voltage and wide voltage range applications. The charge pump includes two single-stage p-type pumps. One of the pumps is used to charge a circuit node down to a threshold voltage .vertline.Vt.sub.p .vertline. less than a desired voltage. When used in such a way, the other pump will charge a substrate to a full -VCC.

Abstract: A substrate bias generator avoids using a free-running oscillator and thereby saves power in the standby mode. A clock enable signal from a regulator sets a latch in a self-timed clock circuit. The latch setting initiates a first group of clock signals (that are used by a pump circuit for pumping), at the end of which the latch is reset but concomitantly an input circuit to the latch is disabled from recognizing a new pump signal. Resetting the latch causes the clock circuit to generate a second group of clock signals used in the charge pump to prepare fully for the next demand for pumping. At the end of the second group of clock signals, a full cycle of clocks has been completed in a self-timed manner, and the input circuit to the latch is reenabled to recognize a subsequent pump signal.

Abstract: A constant current source is used to provide a constant current to set a delay which defines the period of the output of the oscillator. The delay is preferably set by charging a capacitor with the constant current. Because the current is independent of variations in V.sub.CC and temperature, the capacitor will charge for a given period. Therefore, the frequency or period of oscillation will also be fixed and independent of variation in V.sub.CC or temperature. A current limiting circuit and latch are provided to generate an output which will be transmitted through one or a series of inverters. In an alternate embodiment, a differential amplifier is provided between the delay circuit and the current limiting circuit. This differential amplifier is typically needed in a case where VCC is not well-controlled to provide an output signal which has an appropriate voltage. A method of generating an oscillating output for refreshing a DRAM and a method :for refreshing a DRAM are also disclosed.

Abstract: Column circuitry for a CMOS static RAM includes a bit line clamp combined with a bit line current source regulated by a voltage reference which tracks changes in transistor characteristics. Separate data read and data write lines are provided, with a differential amplifier for each pair of bit lines. The data read lines are coupled to compensated current source loads, and the differential amplifiers are couplled to switching transistors which are also compensated for transistor characteristic changes, Each bit line pair has a sneak capacitance prevention transistor so that in non-selected columns the bit line pairs are coupled together allowing the memory cells therein to pull down all of the bit lines. This isolates the read lines from unwanted capacitance in the differential amplifiers of each of the non-selected columns, Further, a VCC protection circuit is provided.