Abstract: There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.

Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: There is provided a technique that includes: (a) forming an oxide layer containing a predetermined element on a first film formed on a substrate by supplying a precursor gas containing the predetermined element to the substrate such that hydroxyl group terminations are formed on a surface of the oxide layer and a density of the hydroxyl group terminations on the oxide layer is higher than a density of hydroxyl group terminations on a surface of the first film before (a); and (b) hydrophobizing the surface of the oxide layer by supplying a modifying gas containing a hydrocarbon group to the substrate.

Abstract: There is provided a technique that includes: (a) performing: (a1) exciting a first oxidizing agent and a first reducing agent into a plasma state and supplying the first oxidizing agent and the first reducing agent thus excited to a substrate, which includes a first surface and a second surface; and (a2) exciting a second reducing agent into a plasma state and supplying the second reducing agent thus excited to the substrate; and (b) heat-treating the substrate subjected to (a).

Abstract: There is provided a technique that includes: (a) forming a first inhibitor layer on a first surface of the substrate having the first surface and a second surface by supplying a first modifying agent to the substrate; (b) forming a first film on the second surface by supplying a first film-forming agent to the substrate; (c) forming a second film on the first film by supplying a second film-forming agent to the substrate, wherein a film including at least one selected from the group of the first film and the second film has been formed on the first surface; (d) removing the film by supplying an etching agent to the substrate; (e) forming a second inhibitor layer on the first surface by supplying a second modifying agent to the substrate; and (f) forming a third film on the second film by supplying a third film-forming agent to the substrate.

Abstract: There is provided a technique, which includes: (a) supplying a modifying agent to a substrate including a first surface and a second surface to form an inhibitor layer on the first surface and at least a portion of the second surface; and (b) forming a film on the second surface by performing a cycle a predetermined number of times, the cycle including (b1) supplying a precursor to the substrate and (b2) supplying a reactant to the substrate, wherein in (b), a process condition per cycle up to an n-th cycle is set to be different from a process condition per cycle on and after an (n+1)-th cycle, wherein n is an integer of 1 or 2 or more.

Abstract: There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).

Abstract: A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.

Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: There is provided a technique that includes (a) forming a first adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a first precursor on a surface of a first base by supplying the first precursor to a substrate including the first base and a second base on a surface of the substrate, (b) forming an adsorption-promoting layer on a surface of the second base by supplying a reactant to the substrate, (c) forming a second adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a second precursor on a surface of the adsorption-promoting layer by supplying the second precursor, which is different in molecular structure from the first precursor, to the substrate, and (d) forming a film on the surface of the first base by supplying a film-forming substance to the substrate subjected to (a), (b), and (c).

Abstract: There is provided a technique that includes: performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate; and (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.

Abstract: A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.

Abstract: A method and apparatus for forming a film containing Si, C and N on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor containing a Si—C bond and not containing halogen to the substrate; and (b) supplying a second precursor containing a Si—N bond and not containing an alkyl group to the substrate, wherein (a) and (b) are performed under a condition that at least a part of the Si—C bond in the first precursor and at least a part of the Si—N bond in the second gas are held without being cut.

Abstract: There is provided a technique including: forming a first film containing first element and second element; and forming a second film adjacent to the first film and containing the first element and the second element being different in characteristics from the first film, wherein one of the first and second films is formed by performing a first cycle a predetermined number of times, the first cycle including performing: (a1) supplying a first precursor gas containing the first element; and (b1) supplying a first reaction gas containing the second element, and wherein the other of the first and second films is formed by performing a second cycle a predetermined number of times, the second cycle including performing: (a2) supplying a second precursor gas containing the first element and being higher in a thermal decomposition temperature than the first precursor gas; and (b2) supplying a second reaction gas containing the second element.

Abstract: There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.

Abstract: There is provided a technique that includes: (a) forming an inhibitor layer on a first surface of a substrate, which includes the first surface and a second surface, by supplying a modifying agent that reacts with the first surface to the substrate; (b) forming a first film on the second surface by supplying a first film-forming agent, at least a portion of which being provided with a first energy, to the substrate in which the inhibitor layer is formed on the first surface; and (c) forming a second film on the first film formed on the second surface by supplying a second film-forming agent, at least a portion of which being provided with a second energy which is higher than the first energy, to the substrate in which the first film is formed on the second surface.