Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.

Abstract: There is provided a technique that includes: (a) supplying aminosilane-based gas to a substrate having a surface on which first and second bases are exposed, to adsorb silicon contained in the aminosilane-based gas on a surface of one of the first and second bases; (b) supplying fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first and second bases, to react the silicon adsorbed on the surface of the one of the first and second bases with the fluorine-containing gas to modify the surface of the one of the first and second bases; and (c) supplying film-forming gas to the substrate after the surface of the one of the first and second bases is modified, to form a film on a surface of the other of the first and second bases different from the one of the first and second bases.

Abstract: There is provided a technique that includes: (a) modifying a surface of one base among a first base and a second base to be F-terminated by supplying a fluorine-containing radical generated from a fluorine-containing gas to a substrate where the first base and the second base are exposed at a surface of the substrate; and (b) forming a film on a surface of the other base, which is different from the one base, among the first base and the second base by supplying a film-forming gas to the substrate after modifying the surface of the one base.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.

Abstract: There is provided a technique that includes: (a) forming a first film containing boron and at least first bonds selected from the group of Si—C bonds and Si—N bonds on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a boron-containing pseudo-catalyst gas to the substrate; and supplying a first precursor gas containing at least the first bonds selected from the group of the Si—C bonds and the Si—N bonds to the substrate; (b) modifying the first film to a second film by supplying a gas containing hydrogen and oxygen to the substrate; and (c) modifying the second film to a third film by performing a thermal annealing process to the second film.

Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.

Abstract: There is provided a technique that includes filling a concave portion formed on a surface of a substrate with a first film and a second film by performing: (a) forming the first film having a hollow portion using a first precursor so as to fill the concave portion formed on the surface of the substrate; (b) etching a portion of the first film which makes contact with the hollow portion, using an etching agent; and (c) forming the second film on the first film of which the portion is etched, using a second precursor, wherein (b) includes performing, a predetermined number of times: (b-1) modifying a portion of the first film using a modifying agent; and (b-2) selectively etching the modified portion of the first film using the etching agent.

Abstract: Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).

Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.

Abstract: A film containing Si, C and N is formed on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a first precursor containing a Si—C bond and not containing halogen to the substrate; and (b) supplying a second precursor containing a Si—N bond and not containing an alkyl group to the substrate, wherein (a) and (b) are performed under a condition that at least a part of the Si—C bond in the first precursor and at least a part of the Si—N bond in the second gas are held without being cut.

Abstract: Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.

Abstract: In a method of manufacturing a semiconductor device, by performing a predetermined number of times a cycle of performing supplying reducing gas to a substrate having an insulating surface and a conductive surface and supplying metal-containing gas to the substrate in a time-division manner, a metal film is formed selectively on an insulating surface.

Abstract: There is provided a method of forming a film with improved step coverage on a substrate by performing, a predetermined number of times, forming a first layer by supplying a halogen-free precursor having a first chemical bond cut by thermal energy at a first temperature and a second chemical bond cut by thermal energy at a second temperature lower than the first temperature and having a ratio of the number of first chemical bonds to the number of second chemical bonds in one molecule thereof, the ratio being equal to or more than 3, to the substrate at a temperature equal to or higher than the second temperature and lower than the first temperature.

Abstract: There is provided a technique that includes: forming a film on a substrate by performing, simultaneously at least for a predetermined period: supplying a first precursor to the substrate, the first precursor containing a chemical bond of a predetermined element and nitrogen or a chemical bond of the predetermined element and carbon, containing a chemical bond of the predetermined element and hydrogen, and not containing a chemical bond of nitrogen and hydrogen; and supplying a pseudo catalyst to the substrate, the pseudo catalyst containing a Group 13 element and not containing the chemical bond of nitrogen and hydrogen, wherein in the act of forming the film, a substance containing the chemical bond of nitrogen and hydrogen is not supplied to the substrate.

Abstract: Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal, film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first, metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.

Abstract: A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.

Abstract: In a method of manufacturing a semiconductor device, by performing a predetermined number of times a cycle of performing supplying reducing gas to a substrate having an insulating surface and a conductive surface and supplying metal-containing gas to the substrate in a time-division manner, a metal film is formed selectively on an insulating surface.

Abstract: A method of manufacturing a semiconductor device includes forming an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.

Abstract: An oxide film is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes: continuously performing supplying in advance an oxidant to a substrate in a process chamber and simultaneously supplying the oxidant and a precursor to the substrate in the process chamber, without having to purge an interior of the process chamber between the act of supplying in advance the oxidant and the act of simultaneously supplying the oxidant and the precursor; stopping the supply of the oxidant and the precursor to the substrate in the process chamber and purging the interior of the process chamber; and supplying the oxidant to the substrate in the purged process chamber.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. In the act of forming the film, a supply amount of the first precursor is set larger than a supply amount of the second precursor.