Abstract: There is provided a technique that includes: forming a film so as to be embedded in a recess formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a pseudo-catalyst to the substrate in a process chamber; (b) exhausting the pseudo-catalyst remaining in the process chamber; (c) supplying a precursor to the substrate in the process chamber; and (d) exhausting the precursor remaining in the process chamber, wherein in (a), the pseudo-catalyst is adsorbed on the surface of the substrate under a condition that chemical adsorption of the pseudo-catalyst on the surface of the substrate is unsaturated.

Abstract: There is provide a technique that includes: etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Abstract: There is provided a technique that includes: (a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate; (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate.

Abstract: There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.

Abstract: There is provided a technique that includes: (a) supplying an adsorption suppressor to a substrate having a surface on which a first base and a second base are exposed under a first temperature to adsorb the adsorption suppressor on a surface of one base of the first base and the second base; (b) thermally annealing the substrate under a second temperature higher than the first temperature after adsorbing the adsorption suppressor on the surface of the one base; and (c) forming a film on a surface of the other base different from the one base of the first base and the second base by supplying a film-forming gas to the thermally-annealed substrate under a third temperature lower than the second temperature.

Abstract: There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.

Abstract: There is provided a technique that includes: (a) forming a first film containing boron and at least first bonds selected from the group of Si—C bonds and Si—N bonds on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a boron-containing pseudo-catalyst gas to the substrate; and supplying a first precursor gas containing at least the first bonds selected from the group of the Si—C bonds and the Si—N bonds to the substrate; (b) modifying the first film to a second film by supplying a gas containing hydrogen and oxygen to the substrate; and (c) modifying the second film to a third film by performing a thermal annealing process to the second film.

Abstract: There is provided a technique that includes: (a) supplying aminosilane-based gas to a substrate having a surface on which first and second bases are exposed, to adsorb silicon contained in the aminosilane-based gas on a surface of one of the first and second bases; (b) supplying fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first and second bases, to react the silicon adsorbed on the surface of the one of the first and second bases with the fluorine-containing gas to modify the surface of the one of the first and second bases; and (c) supplying film-forming gas to the substrate after the surface of the one of the first and second bases is modified, to form a film on a surface of the other of the first and second bases different from the one of the first and second bases.

Abstract: Described herein is a technique capable of selectively growing a film with a high selectivity on a substrate with surface portions of different materials. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) forming a second metal film on a substrate with a first metal film and an insulating film formed thereon by alternately supplying a metal-containing gas and a reactive gas onto the substrate, wherein an incubation time on the insulating film is longer than that on the first metal film; and (b) supplying an etching gas onto the substrate to remove the second metal film formed on the insulating film while allowing the second metal film to remain on the first metal film, wherein the second metal film is selectively grown on the first metal film by alternately repeating (a) and (b).

Abstract: There is included (a) supplying a fluorine-containing gas to an interior of a process vessel; (b) exhausting the fluorine-containing gas from the interior of the process vessel while maintaining a state in which fluorine is adhered to the interior of the process vessel; and (c) forming a film on a substrate by supplying a film-forming gas to the substrate accommodated in the interior of the process vessel to which the fluorine is adhered.

Abstract: There is provided a technique that includes: modifying a surface of first base exposed on a substrate by supplying modifying gas including the first base and second base exposed on the substrate; and selectively forming a film containing at least first element and second element different from the first element on a surface of the second base by supplying precursor gas to the substrate after the surface of the first base is modified, under condition that film-forming reaction by thermal decomposition of the precursor gas does not substantially occur, the precursor gas containing a compound in which atoms of the first element are contained in one molecule, at least one atom of the second element is interposed between two atoms of the first element, and each of the two atoms of the first element is directly bonded to one of the at least one atom of the second element.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).

Abstract: There is provided a technique that includes forming a film containing silicon, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: forming a first layer containing silicon, carbon, and nitrogen by performing a set a predetermined number of times, the set including: supplying a first precursor, which contains at least two Si—N bonds and at least one Si—C bond in one molecule, to the substrate; and supplying a second precursor, which contains nitrogen and hydrogen, to the substrate; and forming a second layer by supplying an oxidant to the substrate, to thereby oxidize the first layer.

Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Abstract: There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Abstract: There is provide a technique that includes: etching a base exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a modified layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the modified layer such that the modified layer reacts with the halogen-containing gas to generate the halogen-containing radical.

Abstract: There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on

Abstract: There is included (a) forming a protective film on a surface of a third base by supplying a processing gas to a substrate in which a first base containing no oxygen, a second base containing oxygen, and the third base containing no oxygen and no nitrogen are exposed on a surface of the substrate; (b) modifying a surface of the second base to be fluorine-terminated by supplying a fluorine-containing gas to the substrate after the protective film is formed on the surface of the third base; and (c) selectively forming a film on a surface of the first base by supplying a film-forming gas to the substrate after the surface of the second base is modified.

Abstract: There is provided a technique that includes: forming a silicon oxide film having a non-stoichiometric composition on a substrate by repeating a cycle a plurality of times, the cycle including non-simultaneously performing: (a) adsorbing a pseudo catalyst on a surface of the substrate by supplying the pseudo catalyst to the substrate; (b) adsorbing silicon contained in a silicon hydride on the surface of the substrate by action of the pseudo catalyst adsorbed on the surface of the substrate by supplying the silicon hydride to the substrate; and (c) oxidizing the silicon adsorbed on the surface of the substrate by supplying an oxidizing agent to the substrate under a condition in which atomic oxygen is not generated.