Abstract: A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

Abstract: A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

Abstract: A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

Abstract: A method and apparatus for forming shallow and deep isolation trenches in a substrate so that the shallow and deep isolation trenches are aligned without mis-registration. The method includes forming a plurality of shallow trenches, covering a portion of the plurality of shallow trenches, then etching the uncovered shallow trenches to create deeper trenches.

Abstract: A method and apparatus for measuring a charge on a surface, such as on a semiconductor wafer, arising during plasma processing is provided. Such a charge may be measured on an insulating film applied to such a wafer. By the present invention, the charge on such an insulator exposed to plasma is measured in-situ using micro-cantilevers. The micro-cantilevers include an insulating base positioned on the substrate and a cantilevered beam extending therefrom to over the substrate. The beam is formed of a conductive material. A charge on the beam causes an opposite charge to form on the substrate. The opposite charges attract to move or deflect the beam towards the substrate. The amount of movement or deflection corresponds to the magnitude of the charge. This movement or deflection of the beam can be measured to determine the charge by bouncing a light source, such as a laser, off of the beam. In another embodiment, the cantilever includes a flexible bridge interconnected between the base and a rigid beam.

Abstract: A method and apparatus for measuring a charge on surface, such as on a semiconductor wafer, arising during plasma processing is provided. Such a charge may be measured on an insulating film applied to such a wafer. By the present invention, the charge on such an insulator exposed to plasma is measured in-situ using micro-cantilevers. The micro-cantilevers include an insulating base positioned on the substrate and a cantilevered beam extending therefrom to over the substrate. The beam is formed of a conductive material. A charge on the beam causes an opposite charge to form on the substrate. The opposite charges attract to move or deflect the beam towards the substrate. The amount of movement or deflection corresponds to the magnitude of the charge. This movement or deflection of the beam can be measured to determine the charge by bouncing a light source, such as a laser, off of the beam. In another embodiment, the cantilever includes a flexible bridge interconnected between the base and a rigid beam.