Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: Techniques associated with a read and write window budget for a two level memory (2LM) system may include establishing a read and write window budget for the 2LM system that includes a first level memory and a second level memory. The established read and write window budget may include a combination of a first set of memory addresses and a second set of memory addresses of the second level of memory. The first set of memory addresses may be associated with non-volatile memory cells having wider cell threshold voltage distributions compared to cell threshold voltage distributions for non-volatile memory cells associated with the second set of memory addresses. According to some examples, the established read and write window budget may be part of a strategy to meet both a completion time threshold for a given amount of memory and an acceptable error rate threshold for the given amount of memory when fulfilling read or write requests to the second level memory.

Abstract: Embodiments include device, storage media, and methods for decoding a codeword of encoded data. In embodiments, a processor may be coupled with a decoder and configured to multiply the codeword and a parity-check matrix of the encoded data to produce a syndrome. If the syndrome is non-zero then the processor may identify a bit error in the codeword based at least in part on a comparison of the syndrome to one or more columns of the parity-check matrix. Other embodiments may be described and claimed.

Abstract: A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.

Abstract: Examples are disclosed for generating or providing a moving read reference (MRR) table for recovering from a read error of one or more memory cells of a non-volatile memory included in a storage device. Priorities may be adaptively assigned to entries included in the MRR table and the entries may be ordered for use based on the assigned priorities. Other examples are described and claimed.

Abstract: Embodiments include methods, apparatuses, and instructions for encoding a codeword of data as codeword portions stored across multiple die in a non-volatile memory. Embodiments further include a decoder which may be configured to decode the portions of the codeword using hard decision reads. The decoder may then be configured to estimate the quality of each die, and apply a scaling factor to the decoded codeword portions such that confidence or reliability information can be determined for the codeword.

Abstract: Embodiments of apparatus, methods, storage drives, computer-readable media, systems and devices are described herein for identification of die of non-volatile memory for use in remedial action. In various embodiments, a first block may be configured to encode data to be stored in a non-volatile memory as a codeword. In various embodiments, the first block may be configured to store respective portions of the codeword in a distributed manner across a plurality of die of the non-volatile memory. In various embodiments, the first block may be configured to generate respective error detection codes for the plurality of die.

Abstract: Examples are disclosed for techniques associated with protecting system critical data written to non-volatile memory. In some examples, system critical data may be written to a non-volatile memory using a first data protection scheme. User data that includes non-system critical data may also be written to the non-volatile memory using a second data protection scheme. For these examples, both data protection schemes may have a same given data format size. Various examples are provided for use of the first data protection scheme that may provide enhanced protection for the system critical data compared to protection provided to user data using the second data protection scheme. Other examples are described and claimed.

Abstract: Examples are disclosed for techniques associated with a read and write window budget for a two level memory (2LM) system. In some examples, a read and write window budget may be established for the 2LM system that includes a first level memory and a second level memory. The established read and write window budget may include a combination of a first set of memory addresses and a second set of memory addresses of the second level of memory. The first set of memory addresses may be associated with non-volatile memory cells having wider cell threshold voltage distributions compared to cell threshold voltage distributions for non-volatile memory cells associated with the second set of memory addresses. According to some examples, the established read and write window budget may part of a strategy to meet both a completion time threshold for a given amount of memory and an acceptable error rate threshold for the given amount of memory when fulfilling read or write requests to the second level memory.

Abstract: Methods and apparatus to provide dynamic window to improve NAND (Not And) memory endurance are described. In one embodiment, a program-erase window associated with a NAND memory device is dynamically varied by starting with a higher erase verify (TEV) voltage and lowering the TEV voltage with subsequent cycles over a life of the NAND memory device based on a current cycle count value. Alternatively, the program-erase window is dynamically varied by starting with a higher erase verify (PV) voltage and erase verify (TEV) voltage and lowering the PV and TEV voltages with subsequent cycles over a life of the NAND memory device based on the current cycle count value. Other embodiments are also disclosed and claimed.

Abstract: Examples are disclosed for cycling endurance extending for memory cells of a non-volatile memory array. The examples include implementing one or more endurance extending schemes based on program/erase cycle counts or a failure trigger. The one or more endurance extending schemes may include a gradual read window expansion, a gradual read window shift, an erase blank check algorithm, a dynamic soft-program or a dynamic pre-program.

Abstract: Defect management logic extends a useful life of a memory system. For example, as discussed herein, failure detection logic detects occurrence of a failure in a memory system. Defect management logic determines a type of the failure such as whether the failure is an infant mortality type failure or a late-life type of failure. Depending on the type of failure, the defect management logic performs different operations to extend the useful life of the memory system. For example, for early life failures, the defect management logic can retire a portion of the block including the failure. For late life failures, due to excessive reads/writes, the defect management logic can convert the failing block from operating in a first bit-per-cell storage density mode to operating in a second bit-per-cell storage density mode.

Abstract: A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.

Abstract: Host writes may be handled differently from background writes to non-volatile memory systems. As a result of using different write algorithms for host writes and backgrounds writes, maximum system lifetime and the maximum system performance may be improved in some embodiments.

Abstract: A method and apparatus for improving the endurance of flash memories. In one embodiment of the invention, a high electric field is provided to the control gate of a flash memory module. The high electric field applied to the flash memory module removes trapped charges between a control gate and an active area of the flash memory module. In one embodiment of the invention, the high electric field is applied to the control gate of the flash memory module prior to an erase operation of the flash memory module. By applying a high electric field to the control gate of the flash memory module, embodiments of the invention improve the Program/Erase cycling degradation of the single-level or multi-level cells of the flash memory module.

Abstract: A method and apparatus for improving the endurance of flash memories. In one embodiment of the invention, a high electric field is provided to the control gate of a flash memory module. The high electric field applied to the flash memory module removes trapped charges between a control gate and an active area of the flash memory module. In one embodiment of the invention, the high electric field is applied to the control gate of the flash memory module prior to an erase operation of the flash memory module. By applying a high electric field to the control gate of the flash memory module, embodiments of the invention improve the Program/Erase cycling degradation of the single-level or multi-level cells of the flash memory module.

Abstract: Embodiments of an apparatus and methods for providing improved flash memory cell characteristics are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus and methods for providing improved flash memory cell characteristics are generally described herein. Other embodiments may be described and claimed.

Abstract: According to embodiments of the invention, an inverted “T” shaped gate can be formed for transistor flash memory cells to reduce feature sizes, to reduce pitch size, to increase gate coupling ratio and/or to reduce parasitic capacitive effects between adjacent flash cells or cell floating gates, such as with optimization of control gate distance between field gates. Such feature sizes include channel width; isolation region width; width of a portion of a gate electrode and/or half-pitch distance between adjacent cells or rows of transistors (e.g., cells).