Abstract: A current value for a reference voltage for a block family is determined. An amount of voltage shift for a memory page of the block family is determined based on the current value for the reference voltage and a prior value for the reference voltage. The block family is associated with a first voltage bin or a second voltage bin based on the determined amount of voltage shift. The first voltage bin is associated with a first voltage offset and the second voltage bin is associated with a second voltage offset.

Abstract: In some embodiments, apparatuses and methods are provided herein useful to validating migrated data. In some embodiments, there is provided a system for validating migrated data including a control circuit configured to migrate data from a first database platform to a second database platform and validate the migrated data. The control circuit configured to transmit a message indicating a mismatch in response to a determination that a first single aggregated hash value does not match with a second single aggregated hash value.

Abstract: A memory system includes a memory array having a plurality of memory cells; and a controller coupled to the memory array, the controller configured to: designate a storage mode for a target set of memory cells based on valid data in a source block, wherein the target set of memory cells are configured with a capacity to store up to a maximum number of bits per cell, and the storage mode is for dynamically configuring the target set of memory cells in as cache memory that stores a number of bits less per cell than the corresponding maximum capacity.

Abstract: The method for creating an optical fiber ribbon of the present disclosure includes a first step of arranging a plurality of optical fibers in parallel to each other for creating the optical fiber ribbon. In addition, the method includes a second step of intermittently bonding the plurality of optical fibers partially at specific intervals using a matrix material. Further, intermittent bonding of the plurality of optical fibers is in pattern of text. Furthermore, intermittent bonding of the plurality of optical fibers allows the optical fiber ribbon to bend along preferential axis. Moreover, intermittent bonding of the plurality of optical fibers is in pattern of text.

Abstract: A memory device includes an array of memory cells and a controller configured to access the array of memory cells. The controller is further configured to program a first number of bits to a first memory cell of the array of memory cells and program a second number of bits to a second memory cell of the array of memory cells. The controller is further configured to following a period after programming the second number of bits to the second memory cell, merge at least a subset of the first number of bits stored in the first memory cell to the second number of bits stored in the second memory cell without erasing the second memory cell such that the second number of bits plus at least the subset of the first number of bits are stored in the second memory cell.

Abstract: Methods, systems, and apparatuses include allocating a temporary parity buffer to a parity group. A write command is received that includes user data and is directed to a portion of memory included in a zone which is included in the parity group. A memory identifier is determined for the portion of memory. Parity group data is received from the temporary parity buffer using the memory identifier. Updated parity group data is determined using the parity group data and the user data. The updated parity group data is sent to the temporary parity buffer.

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to initialize a block family associated with a memory device; initialize a timeout associated with the block family; initializing a low temperature and a high temperature using a reference temperature at the memory device; responsive to programming a block residing on the memory device, associate the block with the block family; and responsive to at least one of: detecting expiration of the timeout or determining that a difference between the high temperature and the low temperature is greater than or equal to a specified threshold temperature value, close the block family.

Abstract: An end effector is disclosed. The end effector includes a first set of one or more suction cups of a first size having a first diameter, and a second set of one or more suction cups of a second size having a second diameter that is smaller than the first diameter. The end effector further includes a first actuation mechanism configured to apply suction to at least a subset of the first set of suction cups independently of actuation of the second set of suction cups and a second actuation mechanism configured to apply suction to at least a subset of the second set of suction cups independently of actuation of the first set of suction cups.

Abstract: A workload management system includes a workload management tool configured to generate a workload context associated with a workload generated based on interactions of a user with workload initiation controls presented within a user interface (UI) of a client application. The workload context includes instructions for transmitting the workload context from a main browser session to a first background browser session; executing the workload within the first background session; and for configuring a first event handler within the main session to wait for a first event generated within the first background session in association with execution of the workload and, in response to receipt of the first event, transmit the client application an instruction to present workload status information in the user interface.

Abstract: At least one data of a set of data stored at a memory cell of a memory component is determined to be associated with an unsuccessful error correction operation. A determination is made as to whether a programming operation associated with the set of data stored at the memory cell has completed. The at least one data of the set of data stored at the memory cell that is associated with the unsuccessful error correction operation is recovered in response to determining that the programming operation has completed. Another memory cell of the memory component is identified in response to recovering the at least one data of the set of data stored at the memory cell that is associated with the unsuccessful error correction operation. The set of data including the recovered at least one data is provided to the other memory cell of the memory component.

Abstract: A request to perform a secure erase operation for a memory component can be received. A voltage level of a pass voltage that is applied to unselected wordlines of the memory component during a read operation can be determined. A voltage pulse can be applied during a program operation to at least one wordline of the memory component to perform the secure erase operation. The voltage pulse can exceed the pass voltage applied to the unselected wordlines of the memory component during the read operation.

Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, receiving a read request to perform a read operation on a block of the memory device; determining whether an entry corresponding to the block is stored in a data structure associated with the memory device; responsive to the entry being stored in the data structure, incrementing a counter associated with the block to track a number of read operations performed on the block of the memory device; resetting a timer associated with the block to an initial value, wherein the timer is to track a period of time that elapses since the read operation was performed on the block of the memory device; determining that the counter and the timer satisfy a first criterion; and responsive to determining that the counter and the timer satisfy the first criterion, removing the entry corresponding to the block from the data structure associated with the memory device.

Abstract: A system and method for transferring items in a storage facility are provided. The storage facility includes a storage system that includes bins, a control server, and a sensing system. A pick-put operation on an inventory item is performed by picking the inventory item from a robotic apparatus by an operator and storing the inventory item in a corresponding bin of the storage system. The control server receives sensor signals when the sensing system automatically senses a pick-up of the inventory item from the robotic apparatus and placement of the inventory item in the corresponding bin of the storage system. The reception of the sensor signals by the control server indicates execution of the pick-put operation. Thus, a need for the operator to manually scan the inventory item during the pick-up or press any buttons on the storage system to indicate completion of the pick-put operation is eliminated.

Abstract: A processing device detects a read operation at a memory device that is directed at a word line group from among multiple word line groups of the memory device. The processing device increments a read counter associated with the word line group based on the read operation being directed at the word line group. The processing device determines the read counter exceeds a read-disturb threshold and performs read-disturb handling on the word line group in response to determining the read counter exceeds the read-disturb threshold.

Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising selecting a source set of memory cells of the memory device, wherein the source set of memory cells are configured to store a first number of bits per memory cell; performing a data integrity check on the source set of memory cells to obtain a data integrity metric value; determining whether the data integrity metric value satisfies a threshold criterion; and responsive to determining that the data integrity metric value fails to satisfy the threshold criterion, causing the memory device to copy data from the source set of memory cells to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell.

Abstract: A set of host data items is received for programming to the memory subsystem. The set of host data items is programmed to a first region of the memory subsystem that includes one or more memory devices. A determination is made that a sequence at which the set of host data items are programmed across memory devices of the first region does not correspond to a target sequence associated with accessing the set of host data items via the first region. The target sequence corresponds to a sequence that enables a host data items programmed to the memory sub-system to be accessed in parallel. The set of host data items is copied from the first region to a second region of the memory subsystem. A sequence at which the set of host data items is copied to memory devices of the second region corresponds to the target sequence.

Abstract: Systems, methods, and apparatus related to a multi-level error correction architecture used for copying data in memory devices. In one approach, user data is stored in the first partition of a non-volatile memory. First error correction code data is generated for the user data and stored with the user data in the first partition. Second error correction code data is generated for the user data and stored outside the first partition. The second error correction code data provides an increased error correcting capability that is compatible with the error correction algorithm used with the first error correction code data. A copyback operation is used to copy the user data and the first error correction code, but not the second error correction code, to a second partition of the non-volatile memory. The second error correction code can be selectively used if there is a need to recover portions of the user data stored in the first partition.

Abstract: Exemplary methods, apparatuses, and systems include an adaptive pre-read manager for controlling pre-reads of the memory device. The adaptive pre-read manager receives a first set of data bits for programming to memory. The adaptive pre-read manager performing a first pass of programming including a first subset of data bits from the set of data bits. The adaptive pre-read manager compares a set of threshold operating differences to a set of differences between multiple operating conditions during the first pass of programming and current operating conditions. The adaptive pre-read manager performs an internal pre-read of the programmed first subset of data bits. The adaptive pre-read manager performs a second pass of programming using the internal pre-read and a second subset of data bits from the first set of data bits.

Abstract: A processing device, operatively coupled with a memory device, is configured to perform a write operation on a page of a plurality of pages of a data unit of a memory device. The processing device further generates a parity page for data stored in the page of the data unit and associates the parity page with parity data associated with the data unit. Responsive to determining that a first size of the parity data is larger than a first threshold size, the processing device compresses the parity data. Responsive to determining that a second size of the compressed parity data is larger than a second threshold size, the processing device releases at least a subset of the parity data corresponding to a subset of the data that is free from defects.

Abstract: A processing device of a memory sub-system is configured to sort a plurality of blocks of the memory device; identify, based on scanning of a first block at a first location of the plurality of sorted block, a first voltage bin associated with the first block; identify, based on scanning of a second block at a second location of the plurality of sorted blocks, a second voltage bin associated with the second block; and responsive to determining that the first voltage bin matches the second voltage bin, assign the first voltage bin to each block that is located between the first location of the plurality of sorted blocks and the second location of the plurality of sorted blocks.