Abstract: Methods, systems, and devices for techniques for managing a voltage recovery operation are described. In some cases, as part of performing a write command to store data to a set of memory cells, the memory system may store an indication of the initial time at which the write operation occurred, the temperature of the set of memory cells at the initial time, or both. The memory system may subsequently manage an accumulated value based on a duration from the initial time and the temperature of the set of memory cells during the duration. If the accumulated value exceeds an accumulation threshold, the memory system may identify an indication of degradation of the set of memory cells. If the indication exceeds a degradation threshold, the memory system may perform a voltage recovery operation to modify voltages of the set of memory cells.

Abstract: Exemplary methods, apparatuses, and systems include a quick charge loss (QCL) mitigation manager for controlling writing data bits to a memory device. The QCL mitigation manager receives a first set of data bits for programming to memory. The QCL mitigation manager writes a first subset of data bits of the first set of data bits to a first memory block of the memory during a first pass of programming. The QCL mitigation manager writes a second subset of data bits of the first set of data bits to the first memory block during a second pass of programming in response to determining that the threshold delay is satisfied.

Abstract: Control logic in a memory device causes a first pulse to be applied to a plurality of word lines coupled to respective memory cells in a memory array during an erase operation. The control logic further causes a second pulse to be applied to a first set of word lines of the plurality of word lines to bias the first set of word lines to a first voltage. The control logic can cause a third pulse to be applied to a second set of word lines of the plurality of word lines to bias the second set of word lines to a second voltage and cause a fourth pulse to be applied to a source line of the memory array to erase the respective memory cells coupled to the first set of word lines and to program the respective memory cells coupled to the second set of word lines.

Abstract: Methods, systems, and apparatuses include receiving a read command including a logical address. The read command is directed to a portion of memory composed of blocks and each block is composed of wordline groups. The physical address for the read command is identified using the logical address. The wordline group is determined using the physical address. A slope factor is retrieved using the wordline group. A read counter is incremented using the slope factor.

Abstract: Methods, systems, and apparatuses include retrieving a defectivity footprint of a portion of memory, the portion of memory composed of multiple blocks. A deck programming order is determined, based on the defectivity footprint, for a current block of the multiple blocks. The current block is composed of multiple decks. The deck programming order is an order in which the multiple decks are programmed. The multiple decks programmed according to the determined deck programming order.

Abstract: A processing device access a command to program data to a page in a block of a memory device. The processing device determines whether the page is a last remaining open page in the block. The processing device accesses a list that indicates enablement of a function to apply read level offsets to one or more open blocks in the memory device. The processing device determines the list includes an entry that matches to the block. The entry indicates enablement of the function to apply read level offsets to the block. The processing device disables the function based on determining the page is a last remaining open page in the block. The processing device adds the command to a prioritized queue of commands. The memory device executes commands from the prioritized queue in an order based on a priority level assigned to each command.

Abstract: A tactile sensor, a surgical instrument, and a method of making the tactile sensor are provided. In one embodiment, a tactile sensor includes a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode. The intermediate layer includes a polyurethane-zinc oxide nanocomposite. Further, one or both of the first and second electrodes may include a silver conductive paste.

Abstract: A method includes receiving, by control logic of a memory device, a copyback clear command from a processing device; causing, in response to the copyback clear command, a page buffer to perform a dual-strobe read operation on first memory cells configured as single-level cells, the dual-strobe read operation including a soft strobe at a first threshold voltage and a hard strobe at a second threshold voltage that are sensed between threshold voltage distributions of the first memory cells; causing the page buffer to determine a number of one bit values within the threshold voltage distributions detected in a threshold voltage range between the first/second threshold voltages; and causing, in response to the number of one bit values not satisfying a threshold criterion, a copyback of data in the first memory cells to second memory cells configured as high-level cells without intervention from the processing device.

Abstract: A system can include a processing device operatively coupled with the one or more memory devices, to perform operations that include writing data to the one or more memory devices and performing one or more scan operations on a management unit containing the data to determine a current value of a chosen data state metric. Each scan operation can be performed using a corresponding predetermined read-time parameter value. The operations can include determining whether the current value of the chosen data state metric satisfies a criterion, and can also include, responsive to determining that the current value of the chosen data state metric satisfies the criterion, selecting a remedial operation by determining whether redundancy metadata is included in a fault tolerant data stripe on the one or more memory devices. The operations can also include performing the remedial operation with respect to the management unit.

Abstract: In general, embodiments of the present disclosure describe a method of sulfur polymerization including preparing a monomer solution. The monomer solution includes sulfur, at least one monomer selected from a vinyl-monomer group including styrene, n-butyl methyl acrylate, methyl methacrylate, acrylic acid, and mixtures thereof, one or more surfactants. The method includes preparing a reaction solution. The reaction solution includes water, combining the monomer solution with the reaction solution, agitating the reaction solution and the monomer solution, adding a free radical initiator, and increasing a reaction temperature.

Abstract: A method includes determining a logical saturation of a memory device in a memory sub-system and adjusting a code rate of the memory device based on the logical saturation, wherein the code rate represents a ratio of user data to a combination of the user data and error correction data.

Abstract: A victim management unit (MU) for performing a media management operation is identified. The victim MU stores valid data in a first memory device of a plurality of memory devices. A cached data item on a second memory device of the plurality of memory devices is identified. A valid-to-invalid ratio of the victim MU is compared to a threshold value. In view of comparison, it is determined whether to pad the cached data item with at least a subset of the valid data stored at the victim MU or dummy data. Based on the determination, the cached data item padded with one of at least a subset of the valid data stored at the victim MU or the dummy data is written to a target MU.

Abstract: Methods, systems, and apparatuses include receiving a write command including user data. The write command is directed to a portion of memory including a first and second block and a first and second user data portion are directed to the first and second block. Temporary parity data is generated using the first and second user data portions. The temporary parity data and the first and second user data portions are stored in a buffer. Portions of the first and second block are programmed with two programming passes. The first and second user data portions in the buffer are invalidated in response to a completion of the second programming pass of the portions of the first and second blocks. The temporary parity data is maintained in the buffer until a second programming pass of the first and second block.

Abstract: A memory system to store multiple bits of data in a memory cell. A memory device coarsely programs a threshold voltage of the memory cell to a first level representative of a combination of bit values according to a mapping between bit value combinations and threshold levels. The threshold levels are partitioned into groups, each containing a subset of the threshold levels and having associated read voltages separating threshold levels in the subset. A group identification of a first group, among the groups, containing the first level is determined for the memory cell. The memory device applies read voltages of different groups, interleaved in an increasing order in a sequence, to read the memory cell when a read voltage applied is associated with the first group. The data bits read back from the memory cell are used to finely program the threshold voltage of the memory cell.

Abstract: A system and a method to facilitate sharing media resources of a computing device with a data device integrated with the system are described for enabling a network based communication with a remote device. The system receives a device information pertaining to available computing devices through a discovery manager. The system selects the computing device from the available computing devices. The system enables to initiate a communication between the data device and the remote device. Upon initiation of the communication, the system receives communication data from the computing device, wherein the communication data are obtained using the shared resources of the computing device. The system transmits the received communication data to the remote device for facilitating the network based communication with the remote device.

Abstract: A memory device to use added known data as part of data written to memory cells with redundant data generated according to an error correction code (ECC). The code rate of the ECC may limit its capability to recover from excessive errors in the stored data. To reduce the errors, the added data retrieved from the memory cells can be corrected without using the ECC. Subsequently, remaining errors can be corrected via the ECC. Optionally, the added data can be configured to be the same as the data represented by an erased state of a subset of the memory cells such that when the subset is used to store the added data, the subset remains in the erased state to reduce wearing. Different subsets can be used to store added data for different write operations to distribute the benefit of reduced wearing.

Abstract: Methods, systems, and apparatuses include receiving a write command including user data. The write command is directed to a portion of memory including a first block and a second block. A buffer is allocated for executing the write command to the first block. The buffer includes multiple buffer decks and the buffer holds the user data written to the first block. User data is programmed into the first block to a threshold percentage. The threshold percentage is less than one hundred percent of the first block. A buffer deck is invalidated in response to programming the first block to the threshold percentage. The buffer deck is reallocated to the second block for programming the user data into the second block. The buffer deck holds user data written to the second block.

Abstract: Data is read from a set of memory cells of a memory device to a buffer of the memory device. One or more bits in error in the data stored by the buffer are corrected by a decoder of the memory device. The decoder corrects the one or more bits in error by decoding the data stored by the buffer. The decoding of the data results in corrected data. An encoder of the memory device encodes the corrected data and the encoded corrected data is programmed to the set of memory cells.

Abstract: A memory system to store multiple bits of data in a memory cell. After receiving the data bits, a memory device coarsely programs a threshold voltage of the memory cell to a first level representative of a combination of bit values according to a mapping between combinations of bit values and threshold levels. The threshold levels are partitioned into a plurality of groups, each containing a subset of the threshold levels. A group identification of a first group, among the plurality of groups, containing the first level is determined for the memory cell. The memory device reads, using the group identification, a subset of the data bits back from the first memory cell, and combines the bits of the group identification and the subset to recover the entire set of data bits to finely program the threshold voltage of the memory cell to represent the data bits.

Abstract: Processing logic in a memory device receives a command to execute a set of read operations having read voltage levels corresponding to a programming distribution associated with the memory device. A set of memory bit counts is determined, where each memory bit count corresponds to a respective bin of a set of bins associated with the multiple read voltage levels of the set of read operations. A valley center bin having a minimum memory bit count of the set of memory bit counts is determined. The processing logic determines that the minimum memory bit count of the valley center bin satisfies a condition and an adjusted read voltage level associated with the valley center bin is identified in response to the condition being satisfied.